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1. |
Theoretical evaluation of electron‐beam‐excited KrF lasers using argon‐free mixtures of one atmosphere |
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Applied Physics Letters,
Volume 45,
Issue 4,
1984,
Page 305-307
Fumihiko Kannari,
Akira Suda,
Minoru Obara,
Tomoo Fujioka,
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摘要:
The output performance of the electron‐beam‐excited KrF laser operating at one atmosphere is theoretically analyzed because the KrF laser at one atmosphere can greatly reduce the design constraints on the large laser windows and the electron‐beam pressure foils in a huge laser system as the inertial confinement fusion energy driver. The KrF laser using the atmospheric pressure, argon‐free laser mixture is found to operate with an intrinsic laser efficiency as high as that of high‐pressure, aregon‐diluted mixtures. This is because three‐body collisional quenching is not a detrimental energy‐loss channel for the atmospheric pressure operation. By using higher excitation rate and shorter excitation pulse width pumping, higher intrinsic laser efficiency than conventional, argon‐diluted, high‐pressure mixtures is found to be attainable. Moreover, the specific laser energy (28 J/l, for 1‐atm Kr/F2mixtures pumped by an electron beam of 100 ns, 600 keV, and 150 A/cm2) is comparable to that of two‐atm, argon‐rich laser gas mixtures under the same excitation condition.
ISSN:0003-6951
DOI:10.1063/1.95271
出版商:AIP
年代:1984
数据来源: AIP
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2. |
Generation of relativistic photoelectrons induced by excimer laser irradiation |
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Applied Physics Letters,
Volume 45,
Issue 4,
1984,
Page 307-309
Y. Kawamura,
K. Toyoda,
M. Kawai,
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摘要:
For the first time, photoelectrons from a metal surface irradiated by a pulsed excimer laser were accelerated to relativistic energy. The energy, the current density, and the pulse duration of the accelerated photoelectrons were 0.41 MeV, 0.5 A/cm2, and 20 ns, respectively.
ISSN:0003-6951
DOI:10.1063/1.95272
出版商:AIP
年代:1984
数据来源: AIP
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3. |
AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate |
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Applied Physics Letters,
Volume 45,
Issue 4,
1984,
Page 309-311
T. H. Windhorn,
G. M. Metze,
B‐Y. Tsaur,
John C. C. Fan,
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摘要:
AlGaAs double‐heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge‐coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the highest power output was 1.8 mW per facet, and the highest differential quantum efficiency was 1.2%.
ISSN:0003-6951
DOI:10.1063/1.95273
出版商:AIP
年代:1984
数据来源: AIP
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4. |
High‐speed analog and digital modulation of 1.51‐&mgr;m wavelength, three‐channel buried crescent InGaAsP lasers |
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Applied Physics Letters,
Volume 45,
Issue 4,
1984,
Page 311-313
G. Eisenstein,
U. Koren,
R. S. Tucker,
B. L. Kasper,
A. H. Gnauck,
P. K. Tien,
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摘要:
The microwave modulation characteristics of 300‐&mgr;m‐long, 1.51‐&mgr;m wavelength, three‐channel buried crescent lasers fabricated on semi‐insulating InP substrates have been studied. A small‐signal bandwidth of 5.7 GHz has been obtained and digital modulation with pseudorandom sequences at 2 and 4 Gb/s has been demonstrated.
ISSN:0003-6951
DOI:10.1063/1.95274
出版商:AIP
年代:1984
数据来源: AIP
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5. |
AgGaS2infrared parametric oscillator |
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Applied Physics Letters,
Volume 45,
Issue 4,
1984,
Page 313-315
Yuan Xuan Fan,
R. C. Eckardt,
R. L. Byer,
R. K. Route,
R. S. Feigelson,
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摘要:
We report the first operation of an optical parametric oscillator in a chalcopyrite crystal, AgGaS2. Tuning from 1.4 to 4.0 &mgr;m is demonstrated for 1.06‐&mgr;m Nd:yttrium aluminum garnet pumping. The potential tuning range extends to the 12‐&mgr;m transparency limit of the crystal.
ISSN:0003-6951
DOI:10.1063/1.95275
出版商:AIP
年代:1984
数据来源: AIP
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6. |
11‐GHz direct modulation bandwidth GaAlAs window laser on semi‐insulating substrate operating at room temperature |
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Applied Physics Letters,
Volume 45,
Issue 4,
1984,
Page 316-318
K. Y. Lau,
N. Bar‐Chaim,
I. Ury,
A. Yariv,
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摘要:
We have demonstrated a direct modulation bandwidth of up to 11 GHz in a window GaAlAs buried heterostructure laser fabricated on a semi‐insulating substrate, operating at room temperature.
ISSN:0003-6951
DOI:10.1063/1.95276
出版商:AIP
年代:1984
数据来源: AIP
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7. |
Spectral characteristics of (GaAl)As diode lasers at 1.7 K |
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Applied Physics Letters,
Volume 45,
Issue 4,
1984,
Page 318-320
J. Harrison,
A. Mooradian,
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摘要:
The spectral broadening as a function of output power for transverse junction stripe (GaAl)As diode lasers has been measured at 1.7 K. The power‐independent linewidth was observed to be about 30 MHz in reasonable agreement with the model involving electron number fluctuations in the device.
ISSN:0003-6951
DOI:10.1063/1.95253
出版商:AIP
年代:1984
数据来源: AIP
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8. |
16–21‐&mgr;m line‐tunable NH3laser produced by two‐step optical pumping |
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Applied Physics Letters,
Volume 45,
Issue 4,
1984,
Page 321-323
H. D. Morrison,
J. Reid,
B. K. Garside,
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摘要:
A novel two‐step optical pumping technique is described for creating line‐tunable laser emission in the 2&ngr;2–&ngr;2band of NH3. Two TE CO2lasers operating on theR(30) andP(24) 9‐&mgr;m transitions are used to pump thesR(5,0) and 2sR(4,3) NH3transitions respectively, and lasing is observed on 11 different NH3lines having wavelengths from 16 to 21 &mgr;m. This pumping technique relies on rapid rotational thermalization in the vibrational levels to enhance the pump absorptions and distribute the population inversion. The possibility of producing cw line‐tunable operation on these transitions is discussed.
ISSN:0003-6951
DOI:10.1063/1.95254
出版商:AIP
年代:1984
数据来源: AIP
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9. |
Polarization‐dependent gain in GaAs/AlGaAs multi‐quantum‐well lasers: Theory and experiment |
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Applied Physics Letters,
Volume 45,
Issue 4,
1984,
Page 324-325
M. Yamada,
S. Ogita,
M. Yamagishi,
K. Tabata,
N. Nakaya,
M. Asada,
Y. Suematsu,
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摘要:
Polarization‐dependent lasing gain in GaAs/AlGaAs multi‐quantum‐well lasers is theoretically calculated and experimentally determined. The dipole moment representing the electron transition is calculated based on thek⋅Pperturbation method. Gain broadening due to the intraband relaxation of electron wave is also taken into account. Experimentally measured gain profiles of TE and TM modes agree well with the theoretical results.
ISSN:0003-6951
DOI:10.1063/1.95255
出版商:AIP
年代:1984
数据来源: AIP
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10. |
In‐plane scattering in titanium‐diffused LiNbO3optical waveguides |
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Applied Physics Letters,
Volume 45,
Issue 4,
1984,
Page 326-328
M. N. Armenise,
M. De Sario,
C. Canali,
P. Franzosi,
J. Singh,
R. H. Hutchins,
R. M. De La Rue,
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摘要:
In‐plane scattering in Ti‐indiffused LiNbO3optical waveguides arises from several possible sources. The importance of the different sources changes as a function of the total diffusion time used in waveguide fabrication. This letter describes detailed observations of different sources and shows that at long diffusion times the in‐plane scattering is dominated by an increasing density of misfit dislocations growing in the waveguiding layer.
ISSN:0003-6951
DOI:10.1063/1.95256
出版商:AIP
年代:1984
数据来源: AIP
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