摘要:

Cross sections and rate constants for electron deexcitation of the excimer states of KrF and XeF have been calculated using a modified impact parameter method, and largeabinitiowave functions. The superelastic processes are dominated by theB→Xtransitions with thermal rate constants of 7×10−8and 3×10−8cm3/sec for XeF and KrF, respectively.

ISSN:0003-6951    

DOI:10.1063/1.91202

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Low‐loss reflection‐star couplers using fused biconically tapered fiber loops are described. The fabrication technique is simple and also allows the construction of hybrid reflection‐transmission‐star couplers.

ISSN:0003-6951    

DOI:10.1063/1.91203

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

A comparative study is given of the photoluminescence properties between undoped (100) InP homoepitaxial MBE and LPE films and bulk crystals. All of the samples show two peaks; one is a near band‐edge emission at 1.41 eV with a small shoulder and the other is at about 1.13 eV. It is shown that the MBE films have a near band‐edge emission with intensity comparable with the LPE films, and exhibit a smaller amount of deep‐level emission than the LPE films and bulk crystals.

ISSN:0003-6951    

DOI:10.1063/1.91204

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The scattering rates for the electron‐impurity and the electron‐phonon interactions in semiconductor multilayer heterojunction structures are calculated. It is found that phonon scattering is enhanced in such structures, whereas, impurity scattering can be strongly reduced at low temperatures as found experimentally.

ISSN:0003-6951    

DOI:10.1063/1.91205

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Room‐temperature (∼26 °C) continous operation of AlxGa1−xAs‐GaAs multiple‐quantum‐well injection lasers has been achieved. These devices are grown by metalorganic chemical vapor deposition and employ active regions consisting of six GaAs quantum wells having a thicknessLz∼120 A˚ separated by five Al0.30Ga0.70As barriers also ∼120 A˚ thick. These laser diodes operate on LO‐phonon‐assisted confined‐particle transitions and exhibit low threshold current densities (Jth∼1660 A/cm2) and high total external differential quantum efficiencies (&eegr;ext∼85%).

ISSN:0003-6951    

DOI:10.1063/1.91206

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

An improved geometry for nonlinear spectroscopy experiments is proposed and demonstrated with the Raman‐induced Kerr effect. The new scheme utilizes the nonreciprocal rotation of linearly polarized light in a Faraday rotator to manipulate the pump, probe, and signal beams. Complete collinear overlap of the interacting laser beams is conveniently achieved, with 100% of the nonlinearly generated signal incident on the detector. The sensitivity is consequently maximized.

ISSN:0003-6951    

DOI:10.1063/1.91183

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Up to 10 kV have been switched with Si and GaAs laser‐activated switches. We show that in spite of the thermal instability shortcoming experienced in Si, quasi‐dc bias operation can be utilized in a manner which relaxes stringent synchronization requirements. In the case of GaAs the thermal instability is less severe and up to 8 kV dc has been held off and efficiently switched. In both cases, a fast switching time of ∼40 ps is observed. This time is a combination of the laser pulse width, geometry bandwidth, and jitter time. Efficient switching action requires only a few tens of microjoules of laser energy. Electrical pulses ranging from subnanosecond to hundreds of nanoseconds duration have been readily generated.

ISSN:0003-6951    

DOI:10.1063/1.91207

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface.

ISSN:0003-6951    

DOI:10.1063/1.91184

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Millimeter‐wave GaAs Schottky barrier diodes were used as fast light detectors. It was possible to observe beat signals between a HeNe laser oscillating at 633 nm and a cw dye laser with approximately 80‐GHz frequency offset. Thus, great frequency differences between lasers emitting in the visible can be determined with the high accuracy inherent in heterodyning techniques.

ISSN:0003-6951    

DOI:10.1063/1.91185

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The use of ion‐beam erosion to transform rounded symmetric grating relief patterns into asymmetric profiles with planar facets and sharp angular features is described. Calculated profiles are confirmed by experimental profiles produced in GaAs but with significant modifications caused by redeposition. Higher efficiency interference (holographic) gratings for spectroscopic and integrated optics applications are suggested by these results.

ISSN:0003-6951    

DOI:10.1063/1.91186

出版商:AIP    

年代:1979

数据来源: AIP