摘要:

Inverted‐V chirped arrays of multiple quantum well GaAs/GaAlAs lasers were grown by molecular beam epitaxy. These arrays consisted of seven gain‐guided lasers whose stripe widths decreased, from the central laser to the outermost ones, symmetrically. This structure makes it possible to discriminate against the higher order array supermodes, which results in diffraction limited beams with a single lobe directed perpendicular to the laser facet. Single lobed far‐field patterns, 3°–4° wide, were obtained from inverted‐V chirped arrays operated up to 1.5Ith. The supermode structure of these arrays was identified by studying their spectrally resolved near fields.

ISSN:0003-6951    

DOI:10.1063/1.95117

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The feedback‐induced noise in single longitudinal mode semiconductor lasers is suppressed over a wide range of feedback light intensity by high‐reflectivity facet coatings. A relative intensity noise value was as low as −140 dB/Hz under 1% optical feedback in the GaAlAs lasers with high‐reflective (0.75) facets.

ISSN:0003-6951    

DOI:10.1063/1.95118

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The temperature dependence of the optical absorption in InGaAsP laser emitting at 1.3 &mgr;m is studied by measuring the relaxation frequency as a function of output power at various temperatures. Our results show that the optical absorption does not vary significantly with increasing temperature. This suggests that the threshold carrier density in InGaAsP lasers is weakly temperature dependent compared to the threshold current density. Thus, the strong temperature dependence of threshold current in 1.3‐&mgr;m InGaAsP lasers is primarily due to the temperature dependence of the carrier lifetime at threshold. The shorter carrier lifetime (i.e., increased carrier loss) at high temperature can be due to Auger recombination.

ISSN:0003-6951    

DOI:10.1063/1.95119

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Bistable operation and self‐sustained pulse oscillation in a semiconductor laser with inhomogeneous excitation are examined. These two characteristics are obtained by the control of the spatial distribution of carrier lifetime in the laser resonator. This laser, which is modulated by injection current, is predicted to have period‐doubling bifurcation, and provides a compact optical chaos emitter.

ISSN:0003-6951    

DOI:10.1063/1.95120

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Calculations which include the effects of lattice heating on recent transient nanosecond experiments done near the band gap of cadmium sulfide at low temperatures are presented. For a detuning of 5.7 meV below theAfree‐exciton resonance and for input intensities of about 1×107W/cm2large optical hysteresis in the transmitted power is predicted. Good agreement between our theoretical predictions based on lattice heating and the experimental results of Bohnert, Kalt, and Klingshirn [Appl. Phys. Lett.43, 1088 (1983)] is obtained.

ISSN:0003-6951    

DOI:10.1063/1.95121

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

It is predicted that linearly chirped optical excitation pulses give rise to photon echoes whose shortness is limited only by the total material bandwidth that contributes to the echo signal. The photon echo process acts as a frequency‐dependent optical delay line whose dispersion is determined by the chirp rate of the excitation pulses rather than by their bandwidth. Consequently, long and short pulses can be compressed with equal facility without complicated alignment procedure. Accumulated echoes have similar properties and can be used with trains of weak excitation pulses.

ISSN:0003-6951    

DOI:10.1063/1.95122

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A new distributed feedback laser, the heteroepitaxial ridge‐overgrown distributed feedback (HRO DFB) laser, is proposed and demonstrated. The HRO DFB lasers operated in stable single longitudinal mode with no observable mode partition events under 2‐Gb/s pseudo‐random pulse modulation with dynamic spectral widths typically 0.5–2 A˚ even with both facets cleaved. Other characteristics of these 1.5‐&mgr;m GaInAsP HRO DFB lasers include ∼10 mW/facet (no antireflection coating) of stable beam, single longitudinal mode output power, and narrow lateral beam divergence of ∼12° (half‐power full width). Actual transmission experiments with dispersive fibers (17 ps/km nm) at ∼1.55 &mgr;m confirmed that the HRO DFB laser is an excellent ‘‘single‐frequency’’ optical source.

ISSN:0003-6951    

DOI:10.1063/1.95109

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Two‐step liquid phase epitaxy is shown to be impeded in the GaInAsP system by the difficulty of achieving uniform epitaxial wetting and highly radiative interfaces. This problem is most severe on the {111}Inplane and could be due to a stochiometric disturbance at the etched surface due to unequal dissolution rates of the crystal components. Anodization etching to a depth between 430–860 A˚ removes this problem and permits reproducible formation of high quality epitaxial layers of InP on {111}Inplanes. The effectiveness of these cleaning procedures is demonstrated by the reproducible preparation of low threshold double channel planar buried heterostructure lasers.

ISSN:0003-6951    

DOI:10.1063/1.95110

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

We report the first demonstration of InGaAsP/InP passive waveguide reflection grating filters. Waveguide filters with ∼1.5‐&mgr;m center wavelength, peak reflectivity >99%, and spectral bandwidths (full width at half‐maximum) as narrow as 6 A˚ and as broad as 130 A˚ have been achieved.

ISSN:0003-6951    

DOI:10.1063/1.95111

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

We have produced 12‐fs (full width at half‐maximum), 0.5‐MW optical pulses at a 500‐Hz repetition rate by passing the amplified pulses from a colliding pulse, passively mode‐locked ring dye laser through an optical fiber pulse compressor.

ISSN:0003-6951    

DOI:10.1063/1.95112

出版商:AIP    

年代:1984

数据来源: AIP