摘要:

We describe the reactive ion etching of InP using a mixture of Br2and either N2or Ar. We report the first fabrication of straight vertical walls in InP at a very fast etching rate of 2 &mgr;m/min. By using a mixture of Br2and Ar and raising the substrate temperature, smooth walls are obtained. To demonstrate that the etched walls can be used as laser mirrors, we fabricated etched‐faceted lasers with threshold currents of 19.0 mA for a laser with one etched and one cleaved facet and 26.6 mA for a laser with two etched facets.

ISSN:0003-6951    

DOI:10.1063/1.101202

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

A one‐dimensional unstable resonator combining free‐space and waveguide propagation is used to efficiently extract power from a large‐area gain medium in a slab waveguide CO2laser. A power of 240 W in a near‐diffraction‐limited beam has been attained at 12% conversion efficiency from a 38 cm gain length in a compact sealed‐off laser head, corresponding to a specific power extraction of 14 kW m−2of discharge area.

ISSN:0003-6951    

DOI:10.1063/1.101203

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Pulses at 1.064 &mgr;m were amplified up to 102times by nonlinear mixing with a coherent pump wave in GaAs. The observed amplification shows a strong dependence on the intersection angle and time delay between pump and probe pulses. The effect is discussed in terms of self‐diffraction by a laser‐induced free‐carrier grating.

ISSN:0003-6951    

DOI:10.1063/1.101204

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Wave mixing experiments are reported using two infrared and one visible laser beams which are incident on a semiconductor doped glass. The mixing process produces infrared to visible image conversion via the material electronic nonlinearity with fast (less than 20 ps) time response.

ISSN:0003-6951    

DOI:10.1063/1.101183

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Vertical‐cavity surface emitters with rear mirrors made of conductive semiconductor stack reflectors (Rr=98%) were developed. Current confinement is obtained via an etch and regrowth technique with no need for dielectrics. Peak powers of 120 mW were achieved at room temperature. The external differential quantum efficiency is 15%.

ISSN:0003-6951    

DOI:10.1063/1.101184

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Dramatic bandwidth enhancement has been achieved in a GaAs traveling‐wave electro‐optic phase modulator by the addition of a GaAs superstrate to suppress both velocity mismatch and electrical dispersion.

ISSN:0003-6951    

DOI:10.1063/1.101185

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

An optical multichannel detection system was used in conjunction with a pulsed xenon lamp and an ultraviolet preionized discharge to record the continuous absorption spectrum of Kr2F(42&Ggr;‐92&Ggr;) in the 255–455 nm wavelength region. The absorbing species was positively identified by its temporal and F2pressure dependences. Peak absorption occurs at 315 nm and has a half width of 85 nm.

ISSN:0003-6951    

DOI:10.1063/1.101186

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

We report here for the first time the demonstration of self‐pumped phase conjugation in photorefractive semiconductors using 1.32 &mgr;m light. Using an ac field technique to enhance the gain coefficient in InP:Fe and a single input pump beam, phase conjugate reflectivities of 11% were measured using an input beam intensity of less than 1 mW/mm2. These results open up many possibilities for using photorefractive semiconductors in applications with low‐power infrared diode lasers.

ISSN:0003-6951    

DOI:10.1063/1.101187

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Methods to assess pulse to pulse timing jitter in periodicallly gain‐switched semiconductor lasers are investigated. The power spectrum of the optical pulse train for mutually incoherent fluctuations of the turn‐on delay time and the pulse amplitude is calculated. The result shows that a measurement of the power spectrum alone is not sufficient for the characterization of the inherent timing jitter. Additional knowledge of the optical waveform and the transfer characteristics of the detection system is necessary.

ISSN:0003-6951    

DOI:10.1063/1.101370

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

A new method for direct formation of conductor lines onto ceramic substrates is presented. This method involves the selective forming of aluminum thin films by decomposing aluminum nitride (AlN) ceramics in argon (Ar) gas atmosphere with aQ‐switched yttrium aluminum garnet (YAG) laser. The aluminum films can also be employed as a catalyst in electroless plating. With nickel (Ni) electroless plating solution, Ni conductor lines with a specific resistance about 1×10−7&OHgr; m were directly and selectively formed on the aluminum layer.

ISSN:0003-6951    

DOI:10.1063/1.101188

出版商:AIP    

年代:1989

数据来源: AIP