1. |
THERMIONIC‐FIELD RESISTANCE MAXIMA IN METAL‐SEMICONDUCTOR (SCHOTTKY) BARRIERS |
|
Applied Physics Letters,
Volume 14,
Issue 3,
1969,
Page 85-88
C. R. Crowell,
V. L. Rideout,
Preview
|
PDF (286KB)
|
|
摘要:
A maximum in the differential resistance versus applied bias relationship of metal‐semiconductor contacts is predicted to occur when current flow is predominantly by thermionic‐field (thermally excited tunnel) emission. The predicted resistance peaks are generally asymmetrical with respect to voltage and may occur on either side of zero bias. The peak location has only an indirect correlation with the Fermi kinetic energy in the semiconductor. The theoretical approach is generally applicable to any metal‐semiconductor system when the dominant carrier flux is associated with the tail of a Fermi‐Dirac distribution. The theory is in reasonable agreement with recent experimental resistance measurements on Cr&sngbnd;Si Schottky barrier diodes at 77°K.
ISSN:0003-6951
DOI:10.1063/1.1652732
出版商:AIP
年代:1969
数据来源: AIP
|
2. |
A TEMPERATURE‐INDEPENDENT CONDUCTING STATE IN TETRACENE THIN FILM |
|
Applied Physics Letters,
Volume 14,
Issue 3,
1969,
Page 88-90
A. Szymanski,
D. C. Larson,
M. M. Labes,
Preview
|
PDF (221KB)
|
|
摘要:
Anomalous electrical conductivity phenomena have been observed in thin tetracene films sandwiched between metal electrodes. The resistivity of the tetracene layer is observed to change from a high value (``off state'') to a low value (``on state'') upon the application of voltage. In the ``on state'' the resistivity is both temperature insensitive and photoinsensitive. A preliminary interpretation of this behavior is presented.
ISSN:0003-6951
DOI:10.1063/1.1652733
出版商:AIP
年代:1969
数据来源: AIP
|
3. |
OBSERVATION OF LOCALIZED RADIATION DAMAGE IN SILICON |
|
Applied Physics Letters,
Volume 14,
Issue 3,
1969,
Page 90-92
T. W. Sigmon,
J. F. Gibbons,
C. B. Norris,
Preview
|
PDF (232KB)
|
|
摘要:
In this experiment 2.8‐MeV protons have been implanted into single‐crystal 〈111〉‐oriented silicon at room temperature. Measurements of the damage created as a function of proton fluence show a linear dependence for fluences from 8.2 × 1011to 4 × 1013protons/cm2. The resulting lattice defects are found to be positively charged in the presence of a high electric field. The defect introduction rate is found to be 9.1 × 10−3net (+) defects/2.8‐MeV proton. Carrier trapping effects of the damage in low to medium electric fields are negligible to within the sensitivity of the experiment. The technique for making the above measurements is explained in detail.
ISSN:0003-6951
DOI:10.1063/1.1652734
出版商:AIP
年代:1969
数据来源: AIP
|
4. |
PHOTO‐REVERSIBLE CHARGE TRANSFER IN RARE‐EARTH‐DOPED‐CaF2 |
|
Applied Physics Letters,
Volume 14,
Issue 3,
1969,
Page 93-94
D. L. Staebler,
Z. J. Kiss,
Preview
|
PDF (135KB)
|
|
摘要:
Photoreversible absorption changes have been found in additively colored La‐, Ce‐, Gd‐, or Tb‐ doped CaF2. Results are shown for one of these, Ce:CaF2, in which both the trivalent and divalent rare‐earth absorptions are identifiable. These results suggest a charge transfer between the rare earth and a defect center produced by additive coloration.
ISSN:0003-6951
DOI:10.1063/1.1652735
出版商:AIP
年代:1969
数据来源: AIP
|
5. |
MICROWAVE FREQUENCY ACOUSTIC SURFACE WAVE PROPAGATION LOSSES IN LiNbO3 |
|
Applied Physics Letters,
Volume 14,
Issue 3,
1969,
Page 94-96
A. J. Slobodnik,
Preview
|
PDF (153KB)
|
|
摘要:
Deflection of laser light has been used to measure room‐temperature acoustic surface wave propagation losses in LiNbO3at both 1 and 2 GHz. In addition, surface wave delay lines operating at 1 GHz using fundamental frequency interdigital transducers and at 2 and 3 GHz using 3rd and 5th harmonic frequencies are described.
ISSN:0003-6951
DOI:10.1063/1.1652736
出版商:AIP
年代:1969
数据来源: AIP
|
6. |
SOUND WAVE AMPLIFICATION IN INDIUM ANTIMONIDE |
|
Applied Physics Letters,
Volume 14,
Issue 3,
1969,
Page 97-99
R. K. Route,
G. S. Kino,
Preview
|
PDF (208KB)
|
|
摘要:
We have directly measured acoustic wave amplification of shear waves in high mobility InSb in the frequency range 0.5–2.0 GHz. At 1 GHz we have observed 10 dB net terminal gain. We find good agreement with the modified theory of White in the high magnetic field region where the acoustic wavelength &lgr; is much larger than the Larmor radius of the electrons. In the low magnetic field limit it is necessary to use the Boltzmann transport equation approach of Spector; in this case, good agreement with the observed behavior is obtained. This effect is shown to be responsible for the two‐mode threshold behavior for acoustoelectric domain oscillations in InSb.
ISSN:0003-6951
DOI:10.1063/1.1652737
出版商:AIP
年代:1969
数据来源: AIP
|
7. |
TIME BEHAVIOR OF EXCITON FORMATION AND LASER EMISSION IN Cd(SeS) PLATELETS |
|
Applied Physics Letters,
Volume 14,
Issue 3,
1969,
Page 99-101
D. L. Keune,
J. A. Rossi,
O. L. Gaddy,
H. Merkelo,
N. Holonyak,
Preview
|
PDF (240KB)
|
|
摘要:
Ultrathin (∼ 1 &mgr;m) Cd(SeS) platelets are excited with a mode‐locked He&sngbnd;Ne laser and are shown to lase with a measured time delay of ∼ 10−9sec. The measured delay agrees with the time required to redistribute optically generated electron‐hole pairs uniformly through the sample thickness and to the proper density (1018/cm3) to form excitons.
ISSN:0003-6951
DOI:10.1063/1.1652738
出版商:AIP
年代:1969
数据来源: AIP
|
8. |
THE DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING |
|
Applied Physics Letters,
Volume 14,
Issue 3,
1969,
Page 102-103
D. A. Thompson,
H. D. Barber,
W. D. Mackintosh,
Preview
|
PDF (134KB)
|
|
摘要:
Experiments are described in which the energy spectra of 1‐MeV He+ions backscattered 150° from a silicon surface have been used to identify and measure the contamination on the surface. Contamination from hydrofluoric acid solutions containing gold and copper in concentrations ranging from 0.1 to 100 parts per million was studied. Less than one half a monolayer of contaminant was easily resolved and identified. Coverages of this order were obtained from solutions containing 0.1 ppm of the contaminant.
ISSN:0003-6951
DOI:10.1063/1.1652725
出版商:AIP
年代:1969
数据来源: AIP
|
9. |
EVIDENCE FOR SPACE CHARGE LIMITED IONIC TRANSPORT AT THE SILVER CHLORIDE‐AQUEOUS SOLUTION INTERFACE |
|
Applied Physics Letters,
Volume 14,
Issue 3,
1969,
Page 104-106
H. A. Hoyen,
J. A. Strozier,
Che‐Yu Li,
Preview
|
PDF (224KB)
|
|
摘要:
Alternating current conductance and capacitance measurements are made on aqueous solution‐silver chloride‐aqueous solution couples as a function of frequency. The frequency dependence of the measured conductance and capacitance is found to agree with the calculated results based on a space‐charge‐limited ac conduction model.
ISSN:0003-6951
DOI:10.1063/1.1652726
出版商:AIP
年代:1969
数据来源: AIP
|
10. |
DYNAMIC MODE SURFACE WAVES ON MAGNETIZED YIG AND FERRITE RODS |
|
Applied Physics Letters,
Volume 14,
Issue 3,
1969,
Page 106-108
T. F. Tao,
J. W. Tully,
F. W. Schott,
Preview
|
PDF (204KB)
|
|
摘要:
Electromagnetic surface waves on magnetized single crystalline YIG and polycrystalline ferrite rods were studied. In particular, the dynamic mode surface waves, which do not exist in the magnetostatic analysis, were measured by the disturbing body technique in a surface wave resonator. The measured results agree very well with the exact analysis. We believe this is the first report in which the existence of dynamic mode surface waves is experimentally demonstrated.
ISSN:0003-6951
DOI:10.1063/1.1652727
出版商:AIP
年代:1969
数据来源: AIP
|