摘要:

It is shown that an optically pumped formic acid laser operating at 394 or 433 &mgr;m can lase on two sets of nondegenerate orthogonally polarized modes when a strip grating output coupler is used. The laser output polarization can be switched from parallel to perpendicular to the strips by a small cavity length change which is in accordance with calculated reflection phase changes of the grating for the two polarizations. For 30 W pump power ∼5 mW can be obtained at 394 &mgr;m in either polarization when the grating strips are oriented perpendicular to the pump polarization.

ISSN:0003-6951    

DOI:10.1063/1.96623

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Optical power transmission of 5‐&mgr;m band CO laser beam through As2S3glass core Teflon fluorinated ethylene propylene clad fibers is described. The maximum transmitted power is as high as 62 W with a 700‐&mgr;m core diameter fiber, which corresponds to a power intensity of 16 kW/cm2at the fiber output end. The influence of fiber bending on the transmission characteristics is also reported.

ISSN:0003-6951    

DOI:10.1063/1.97017

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Properties of GexSi1−xstrained‐layerp‐i‐ndetectors, in which the strained‐layer superlattice itself was used as an absorption region, have been studied for the first time. These devices were grown on (100)Si by molecular beam epitaxy. Using waveguide geometry we have obtained internal quantum efficiencies on the order of 40% at 1.3 &mgr;m in superlattices with the Ge fractionx=0.6. The superlattice detectors show the frequency response bandwidth of over 1 GHz and uniformly excellent electrical characteristics for values ofxas large as 0.8.

ISSN:0003-6951    

DOI:10.1063/1.96624

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The frequency modulation (FM) due to injection current modulation of vapor phase transported distributed feedback (VPT DFB) semiconductor lasers is measured as a function of modulation frequency from 10 kHz to 1 GHz. A large frequency modulation response of 350 MHz/mA is obtained for the modulation frequency range of 10 to 1000 MHz. Demodulation of optical frequency shift keying (FSK) at 560 Mb/s is demonstrated, indicating that frequency modulation due to thermal modulation does not pose a significant limitation at this bit rate or higher. The large FM response together with modulation bandwidths up to 8 GHz makes the VPT DFB laser an attractive source for high bit rate optical FSK transmission.

ISSN:0003-6951    

DOI:10.1063/1.96625

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Mass‐modulated plastic microballoons have been ablatively imploded by green (0.53 &mgr;m) laser light at an absorbed irradiance of 2×1013W cm−2. Temporally growing spikes are seen on the outside surface of the target; evidence of the occurrence of mass redistribution indicates that the spikes are due to the Rayleigh–Taylor instability. A growth rate of 0.52±0.06 of classical has been inferred.

ISSN:0003-6951    

DOI:10.1063/1.96626

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The observation of (111) Si/SiO2interfacePb0defects (modeled as0Si≡Si3) with dangling bonds positioned along [11¯1], [1¯11], and [111¯] from low‐temperature (T≲30 K) electron spin resonance measurements is reported. This is connected with the particular structure (SiOx) of the attendant very near‐Si interfacial transition region for the oxidation method invoked. Some instructive information as to the precise atomic modeling of the Si/SiO2interface is inferred.

ISSN:0003-6951    

DOI:10.1063/1.96627

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

By precise measurement of the spatial variation in the lattice parameters of {001} undoped Czochralski grown gallium arsenide wafers, it was found that the lattice parameters are strongly dependent upon elastic strain and not so much on the melt composition. Although a remarkable spatial variation in the lattice parameters of ±5×10−6nm from the average value was observed in a wafer specimen, the variation was considerably reduced to ±2×10−6nm by dividing the wafer into small specimens. The lattice parameter variation was smaller than 2×10−6nm due to a change in the As composition ratio from 0.42 to 0.52 in the melt.

ISSN:0003-6951    

DOI:10.1063/1.96628

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A study of current drift phenomena of InGaAs depletion mode metal‐insulator field‐effect transistors fabricated with plasma enhanced chemical vapor deposited Si3N4is reported for the first time. The data indicate that the current varies logarithmically versus time and that the capture mechanism does not depend on temperature. A strong correlation is demonstrated between the amplitude of the hysteresis ofC(V) curves measured on metal‐insulator‐semiconductor devices and the total oxide thickness located between the deposited dielectric film and the InGaAs layer. This behavior suggests that states situated in this native oxide layer are responsible for the current drift. Moreover, these states are energetically distributed in the band gap of InGaAs.

ISSN:0003-6951    

DOI:10.1063/1.96629

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Degradation in performance is reported of metal‐insulator‐semiconductor solar cells after isochronal and isothermal preprocessing heat treatment. Apart from the bulk lifetime degradation, an enhanced surface recombination is also observed. This is believed to be the first time that degradation in cell performance is reported which is solely due to the heat treatment and not related to the effect of diffusion.

ISSN:0003-6951    

DOI:10.1063/1.96630

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Chloride vapor phase epitaxy of Ga0.52In0.48P/GaAs was studied using a reactor with two growth chambers. We have obtained high‐purity epitaxial layers of both GaInP and GaAs. For the growth of a heterostructure with an abrupt interface, the optimum growth condition was investigated in detail. Abruptness of the heterointerface was investigated by observing the two‐dimensional electron gas at the heterointerface of Ga0.52In0.48P/GaAs by the Hall and Shubnikov–de Haas measurements.

ISSN:0003-6951    

DOI:10.1063/1.96631

出版商:AIP    

年代:1986

数据来源: AIP