1. |
Simultaneous two‐wavelength selection in the N2laser‐pumped dye laser |
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Applied Physics Letters,
Volume 21,
Issue 8,
1972,
Page 339-340
Herschel S. Pilloff,
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摘要:
A technique is reported which allows simultaneous two‐wavelength selection in the N2laser‐pumped dye laser. The two wavelengths are continuously tunable anywhere within the optical gain region of the particular dye solution used, and the two output beams are collinear and collimated, have mutually orthogonal polarizations, and in general can be temporally synchronized. Following the description of this device, the extension of this technique to other lasers and a few potential applications will be briefly discussed.
ISSN:0003-6951
DOI:10.1063/1.1654402
出版商:AIP
年代:1972
数据来源: AIP
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2. |
High‐repetition‐rate optical pulse generator using a Fabry‐Perot electro‐optic modulator |
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Applied Physics Letters,
Volume 21,
Issue 8,
1972,
Page 341-343
T. Kobayashi,
T. Sueta,
Y. Cho,
Y. Matsuo,
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摘要:
A high‐repetition‐rate optical pulse generator which employs a Fabry‐Perot electro‐optic modulator as the output coupler of a laser resonator was constructed. Using this generator with a He&sngbnd;Ne 6328‐Å laser tube, 21‐psec optical pulses at a repetition rate of 2.7 × 109pps were experimentally obtained with an average power level of 0.5 mW. In addition, it is demonstrated that the width of the pulses obtained from this generator can be narrowed without regard to the gain‐linewidth limitation. This kind of pulse generator may be particularly useful for obtaining short optical pulses from low‐gain gas lasers, and it is possible to obtain 1010‐pps picosecond pulses from a He&sngbnd;Ne 6328‐Å laser.
ISSN:0003-6951
DOI:10.1063/1.1654403
出版商:AIP
年代:1972
数据来源: AIP
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3. |
CO TEA laser at 77°K |
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Applied Physics Letters,
Volume 21,
Issue 8,
1972,
Page 343-345
D.B. Cohn,
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摘要:
A CO TEA laser, cooled to 77°K by a surrounding liquid‐nitrogen bath, is found to exhibit laser action on approximately 60 transitions over the spectral range 4.960–5.610 &mgr;m. Following a single 0.5‐&mgr;sec excitation pulse, lasing action is observed to continue up to 2 msec with 15 Torr of CO and up to 4 msec with a 14‐Torr CO&sngbnd;N2mixture.
ISSN:0003-6951
DOI:10.1063/1.1654404
出版商:AIP
年代:1972
数据来源: AIP
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4. |
Rotational relaxation and triplet‐state effects in the cw dye laser |
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Applied Physics Letters,
Volume 21,
Issue 8,
1972,
Page 345-348
A.E. Siegman,
D.W. Phillion,
D.J. Kuizenga,
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摘要:
In a cw dye laser apparatus we measure first the fluorescence depolarization in the usual manner, and then the ratio of laser threshold pump powers for the laser polarization parallel and perpendicular to the linearly polarized pump source. From these two measurements we can obtain the important triplet‐state parameterKT≡kST&tgr;T&sgr;T/ &sgr;e, as well as the rotational relaxation time for the dye. For Rhodamine 6G in water with Triton X‐100, we findKT=0.35 ± 0.02, while with Ammonyx‐LOKT=0.25 ± 0.02. These additives also slow down the rotational relaxation of the dye molecule by more than an order of magnitude compared to common organic solvents.
ISSN:0003-6951
DOI:10.1063/1.1654405
出版商:AIP
年代:1972
数据来源: AIP
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5. |
Passive mode locking of the cw dye laser |
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Applied Physics Letters,
Volume 21,
Issue 8,
1972,
Page 348-350
E.P. Ippen,
C.V. Shank,
A. Dienes,
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摘要:
Passive mode locking of a cw Rhodamine 6G laser is reported. A stable continuous output of picosecond pulses has been achieved. Correlation measurements using second‐harmonic generation (SHG) have determined the pulses to be as short as 1.5 psec. The pulses are transform limited and are wavelength tunable over the range 5900–6100 Å.
ISSN:0003-6951
DOI:10.1063/1.1654406
出版商:AIP
年代:1972
数据来源: AIP
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6. |
Background energy level spectroscopy in GaP using thermal release of trapped space charge in Schottky barriers |
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Applied Physics Letters,
Volume 21,
Issue 8,
1972,
Page 350-352
B.L. Smith,
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摘要:
The energy distribution and concentration of electrically active background impurities in GaP have been investigated by observing the current when space charge trapped at these impurities is thermally released within the depletion region of a Schottky barrier formed on the semiconductor. Large‐area Schottky barriers are used for these measurements in order that small concentrations of impurities may be detected. The measurements have been carried out for both liquid‐encapsulated‐Czochralski (LEC)‐ and liquid‐phase‐epitaxial (LPE)‐grown material usingn‐type wafers. In LEC GaP, at least seven electrically active background levels are detectable and these exist at concentrations between 1 × 1015−3 × 1016cm−3, while in LPE GaP only three or four are detectable and these exist in much smaller concentrations of about 1014cm−3.
ISSN:0003-6951
DOI:10.1063/1.1654407
出版商:AIP
年代:1972
数据来源: AIP
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7. |
Computed secondary‐electron and electric field distributions in an electron‐beam‐controlled gas‐discharge laser |
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Applied Physics Letters,
Volume 21,
Issue 8,
1972,
Page 352-355
R.C. Smith,
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摘要:
A Monte Carlo calculation indicates, to first order, the effect of a 4‐kV/cm atm sustainer field on the primary‐electron dose distribution and the secondary‐electron density distribution in an electron‐beam‐controlled gas‐discharge laser. For the 100‐keV incident electrons considered, the electron range is, at most, doubled by the field and the maximum lateral displacement increases by 50%. For electrodes separated by 1.1 times the no‐field electron range, the secondary electron density has a spatial variation to first order of ± 20%.
ISSN:0003-6951
DOI:10.1063/1.1654408
出版商:AIP
年代:1972
数据来源: AIP
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8. |
Growth of three‐dimensional dielectric waveguides for integrated optics by molecular‐beam‐epitaxy method |
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Applied Physics Letters,
Volume 21,
Issue 8,
1972,
Page 355-356
A.Y. Cho,
F.K. Reinhart,
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摘要:
Experimental work was carried out to fabricate three‐dimensional waveguides for integrated optics by masking molecular beams during epitaxy of GaAs and AlxGa1−xAs. We report here some preliminary results of this new technique for fabricating dielectric waveguides.
ISSN:0003-6951
DOI:10.1063/1.1654409
出版商:AIP
年代:1972
数据来源: AIP
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9. |
Absorption saturation in germanium, silicon, and gallium arsenide at 10.6 &mgr;m |
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Applied Physics Letters,
Volume 21,
Issue 8,
1972,
Page 356-357
A.F. Gibson,
C.A. Rosito,
C.A. Raffo,
M.F. Kimmitt,
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摘要:
The absorption ofp‐type Ge, Si, and GaAs at 10.6 &mgr;m decreases at high intensities. The saturation intensity of Ge, 10 MW cm−2, is sufficiently low for it to be used for passive mode locking of a TEA laser.
ISSN:0003-6951
DOI:10.1063/1.1654410
出版商:AIP
年代:1972
数据来源: AIP
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10. |
Low‐loss epitaxial ZnO optical waveguides |
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Applied Physics Letters,
Volume 21,
Issue 8,
1972,
Page 358-360
J.M. Hammer,
D.J. Channin,
M.T. Duffy,
J.P Wittke,
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摘要:
Optical waveguide losses below 5 dB/cm have been measured on single‐crystal epitaxial ZnO films grown on Al2O3. These films promise to be useful in a variety of active integrated optic applications. Comparison of the details of loss measurements with carrier density and mobility measurements gives information on possible loss mechanisms.
ISSN:0003-6951
DOI:10.1063/1.1654411
出版商:AIP
年代:1972
数据来源: AIP
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