摘要:

The transient and noise characteristics of single and multiple‐quantum‐well heterostructure lasers grown by metalorganic‐chemical vapor depostion are investigated. In pulsed operation these lasers do not exhibit damped relaxation oscillations and under dc excitation the quantum shot noise resonance is much less than that of standard double heterostructure lasers of comparable stripe widths.

ISSN:0003-6951    

DOI:10.1063/1.92463

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

It is shown that high‐through‐put, high‐yield molecular beam epitaxy, and highly reproducible (AlGa)As double‐heterostructure (DH) laser wafers can be grown by molecular beam epitaxy (MBE) with properly designed multichamber MBE systems. This is demonstrated by growing two series of (AlGa)As DH laser wafers and measuring their broad‐area threshold current densityJthdistributions across the wafers (3.5 cm diameter). The first series consists of four different wafers grown consecutively at growth rates of 2.9, 4.2, 7.4, and 9.5 mm/h. The results show that theJth’s are not affected by accelerated growth rates. In the second series, four DH laser wafers having the same layer structures were grown under the same conditions without interruption at 11.5 mm/h. The results show that even at such high growth rates the qualities of the DH laser wafers are still highly reproducible. The low‐averagedJth’s (∼700 A/cm2) of the present DH wafers in both series also show that the material and heterojunction qualities of these wafers are as good as those previously grown at lower growth rates (∼1.5 mm/h). The half‐peak full‐width of theJthdistributions across an area of 3‐cm width of the wafers (3.5 cm diameter) are about 50–60 A/cm2. Such narrow range of distributions ensures high device yield.

ISSN:0003-6951    

DOI:10.1063/1.92464

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A laser propagation concept is described, which can be used to eliminate or reduce laser beam spreading due to thermal blooming and diffraction. The concept involves establishing a guiding channel with a laser operating in the TEM01* mode, through which the main laser beam is propagated. A feasibility demonstration of the concept is presented using CO2lasers.

ISSN:0003-6951    

DOI:10.1063/1.92465

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

We report an electrochromic display cell with intrinsic matrix addressability. The cell, based on a sputtered iridium oxide film (SIROF) and a tantalum‐oxide hysteretic counterelectrode, has electrochromic parameters (i.e., response times, operating voltages, and contrast) similar to those of other SIROF display devices, but in addition, has short‐circuit memory and voltage threshold. Memory and threshold are sufficiently large to allow, in principle, multiplexing of electrochromic display panels of large‐screen TV pixel size.

ISSN:0003-6951    

DOI:10.1063/1.92466

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A silicon thin‐film interferometer structure is used to demonstrate subnanosecond electrical modulation of light. Both thermally and electrically induced modulations are reported. An electrically induced change in refractive index of 4.7×10−4is observed.

ISSN:0003-6951    

DOI:10.1063/1.92467

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Reflectance and contrast ratio of a black liquid‐crystal display made from a solution of dichroic dyes in a cholesteric host were measured as function of incidence angle and liquid‐crystal layer thickness. The experimental data were in reasonable agreement with theory.

ISSN:0003-6951    

DOI:10.1063/1.92468

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Using a dielectric‐lined waveguide in combination with a relativistic electron beam, we are able to produce 1 kW of Cerenkov microwave radiation. We have observed the dependence of the output microwave frequency on the beam voltage. In addition, we have detected microwave radiation in excess of 150 GHz, corresponding to higher‐order mode interaction.

ISSN:0003-6951    

DOI:10.1063/1.92469

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A XeCl* excimer laser excited by 2‐ms‐long, 9.375‐GHz microwave pulses has been constructed. Spontaneous emission times of ∼500 ns have been observed, while the maximum laser pulse length was 100 ns. The laser pulse length appears to be limited by the buildup of a transient loss.

ISSN:0003-6951    

DOI:10.1063/1.92448

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A new channeled substrate (GaAl)As double‐heterostructure laser with mode control as well as internal current confinement is described. The narrow active region (3–3.5 mm) surrounded by GaAlAs is buried in the etched channel, around which a reverse‐biased heterojunction is formed. The threshold current is as low as 20 mA cw, and highly stable fundamental‐mode lasing is observed.

ISSN:0003-6951    

DOI:10.1063/1.92449

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A self‐aligned masking technique for growing diode lasers with lateral spatial variations in the active and/or cladding regions by metalorganic‐chemical vapor deposition is described. These lasers inherently have both lateral current confinement and lateral real refractive index waveguidance. Threshold currents of 40 mA and differential quantum efficiencies of 30% are measured reproducibly over a wafer.

ISSN:0003-6951    

DOI:10.1063/1.92450

出版商:AIP    

年代:1981

数据来源: AIP