摘要:

The pulse of aQ‐switched ruby laser operated below the threshold for spark formation and focused in a point‐plane gap can profoundly affect the development of impulse corona for times up to 1 sec. This effect can be strongly modified by the application of a small (10 V/mm) dc field across the gap. With a positive impulse to the point and a negative dc field, a change of 10 &mgr;sec in the delay time between charge injection and application of the voltage impulse can change the probability of gap flash‐over from near zero to greater than 90%.

ISSN:0003-6951    

DOI:10.1063/1.1652947

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The CH3F gas is found to cause passiveQ‐switching of two CO2laser lines in the 9.6 &mgr; band. The responsible vibrational‐rotational transitions of CH3F are identified. The PF5gas is found to have an unusual capability ofQ‐switching practically all theP‐branch laser lines in the 10.6 &mgr; band of CO2. Relevant absorption coefficients are presented.

ISSN:0003-6951    

DOI:10.1063/1.1652948

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

A technique for maintaining a spatially uniform and optimum concentration of cadmium vapor in a helium—cadmium laser discharge tube is described. Cadmium vapor, continuously fed in at the anode end of the discharge tube, flows by cataphoresis to the cathode end where it is condensed on a cold surface.

ISSN:0003-6951    

DOI:10.1063/1.1652949

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

A simple method is proposed and demonstrated for the determination of a minute amount of deep‐level impurities in the transition region ofp‐njunctions from the high‐frequency capacitance change when the junction temperature is lowered from room temperature to 77°K and the junction bias is switched to zero and back to the large reverse bias to set the charge trapped at these centers to the equilibrium value. Sensitivity of 1011atoms/cm3and 105total atoms in the depletion layer is demonstrated in junction gettered by phosphorus glass. Examples are also given for Ni‐ and Audoped silicon diodes and transistors.

ISSN:0003-6951    

DOI:10.1063/1.1652950

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The nonlinear absorption coefficients of Si from 146 to 452°K and of CdSe, CdTe, and GaAs at 300°K were measured with a Nd:YAlGQ‐switched laser. The reported stepwise nature of nonlinear absorption for Si is confirmed, but the assignment of a three‐photon process is uncertain. As an optical limiter, the optimum Si thickness to be inserted within a Nd:laser cavity is discussed.

ISSN:0003-6951    

DOI:10.1063/1.1652951

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Superradiant traveling‐wave laser emission has been observed with several polymethine cyanine dyes pumped by a mode‐locked ruby laser. This mode of operation provides a simple and effective means for generating picosecond‐duration pulses at a variety of wavelengths.

ISSN:0003-6951    

DOI:10.1063/1.1652952

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Electrical and optical evaluations of a lateral GaAsP+N‐junction are reported. The current‐voltage characteristics of these devices produce a double current‐controlled negative‐resistance behavior and a region with bulk negative‐resistance instability which is coupled with simultaneous emission of light at a wavelength of 8800 Å at 300°K. Near‐sinusoidal oscillations from 200 KHz to 10 MHz were obtained and the frequency of oscillation is a function of applied voltage, i.e., current, and temperature. The effect of an applied magnetic field on the current‐voltage characteristics and oscillating frequencies was also investigated.

ISSN:0003-6951    

DOI:10.1063/1.1652953

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

We have demonstrated a method of accurately controlling the spectral properties of a pulsed, singly resonant optical parametric oscillator. The resonated output of a ruby‐laser‐pumped LiNbO3oscillator was ``locked'' to the frequency of radiation injected into a mode of the oscillator cavity by a single‐frequency cw Nd:YAG laser. Locking could be obtained if the peak of the oscillator gain curve was tuned to within 18 Å of the YAG wavelength. The minimum injected power required to ensure locking of the 100‐kW oscillator output was 1 &mgr;W.

ISSN:0003-6951    

DOI:10.1063/1.1652954

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Injection of carriers into thermally grown SiO2from an avalanche plasma in silicon is a new way of achieving high current densities in SiO2. Electron injection fromp‐type silicon and hole injection fromn‐type silicon by hot carrier emission have been observed. Average electron current densities as high as 10−2A/cm2have been observed to flow through 1000 Å of SiO2. The oxide becomes negatively charged as a result of electron injection and positively charged as a result of hole injection. These charging effects appear to be related to the presence of water in the oxide.

ISSN:0003-6951    

DOI:10.1063/1.1652955

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The effects of N2and He on the rotational relaxation rate of the CO200°1 upper laser level have been measured. These gases were found to be slightly less effective than CO2in thermalizing the rotational energy levels.

ISSN:0003-6951    

DOI:10.1063/1.1652956

出版商:AIP    

年代:1969

数据来源: AIP