摘要:

Under the condition of continuous acoustic generation the patterns of forward, backward, and standing SAW’s propagating on ay‐cutz‐propagating LiNbO3crystal were observed clearly by the frequency‐translated holographic technique. The parameters of surface‐wave propagation velocity, reflectivity, and transmissivity for an interdigital transducer could be obtained by this technique.

ISSN:0003-6951    

DOI:10.1063/1.88514

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

It was found that mechanical strain has a striking effect on the chemisorption rate of the polar surfaces of ZnO. Depending on its sign, a strain as low as 10−3can increase or decrease the rate of chemisorption by more than an order of magnitude. This piezochemisorption effect was shown to be consistent with a model based on strain‐induced changes in the height of the surface potential barrier and the surface barrier‐controlled transfer of electrons between the semiconductor and the adsorbed species.

ISSN:0003-6951    

DOI:10.1063/1.88515

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

The electrostriction of alkali halide crystals containing substitutional impurities (the paraelectric systems KCl:Li+, NaBr:F−, RbCl:Ag+, RbBr:Ag+, KCl:OH−, and the system KBr:Li+) has been measured for concentrations of the order 1017–1018cm−3. Some of these systems exhibit a giant almost temperature‐independent electrostrictive effect that does not saturate.

ISSN:0003-6951    

DOI:10.1063/1.88516

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Scattered energy distributions are calculated for light ions incident on Nb and Mo surfaces of interest for controlled nulcear fusion reactors. The scattered energy is found to vary as a function of the reflection coefficient between a multiple‐collision limit at low energies and a single‐collision Rutherford scattering limit at high energies. High‐energy peaking of the scattered particle distributions is also found for low incident energies.

ISSN:0003-6951    

DOI:10.1063/1.88517

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Transmission electron microscopic observations have been made on dislocations generated in high‐dose (1×1015–3×1016ions/cm2) phosphorus‐implanted (111) silicon wafers followed by 1100 °C isothermal annealing in inert (dry N2) and oxidizing (wet O2) atmospheres. The generation and movement of dislocations in a wafer are strongly influenced by atmospheres during annealing. In dry‐N2annealing, the critical ion dose for generation of dislocation networks is 1×1016ions/cm2, which is three times higher than that in wet‐O2annealing. Also, dislocations move down to greater depths in a wafer after annealing in a wet‐O2atmosphere, while in dry‐N2annealing their location in a wafer is usually unchanged.

ISSN:0003-6951    

DOI:10.1063/1.88518

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

The spectral dependence of the photocurrent in Pb‐Pb oxide‐Pb structures is investigated varying both the electrode thickness and the resistance of the junctions. The samples exhibit sign reversal of the photocurrent with changing photon energyh&ngr;. The effect is strongly controlled by the electrode thickness and direction of illumination. Zero‐bias barrier heights betwen 0.8 and 1 eV have been deduced from the threshold of the photoresponse. Onset of band‐to‐band excitation in the oxide film has probably been observed ath&ngr;≃2.7 eV for thermally oxidized samples and ath&ngr;≃2.9 eV for plasma‐oxidized samples.

ISSN:0003-6951    

DOI:10.1063/1.88519

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Experiments with latching and nonlatching quantum interference logic devices are described. The device is a three‐junction interferometer, switching with control currents of <0.5 mA. Simple logic functions have been performed with dc‐powered nonlatching devices having a power dissipation of <40 nW in continuous operation.

ISSN:0003-6951    

DOI:10.1063/1.88520

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

This letter reports laser action on the xenon monofluoride2&Sgr;1/2→2&Sgr;1/2band at 354 nm. Lasing on discrete vibrational bands has been achieved by pulse excitation of high‐pressure mixtures of F2/Xe/Ar with an electron beam. XeF is a member of a new class of diatmoic molecules, the noble gas monohalides, which all exhibit similar molecular structure and spectra, and laser action should be attainable on the various bands of other members of this class of molecules. The kinetics and loss mechanisms of these laser candidates are briefly discussed.

ISSN:0003-6951    

DOI:10.1063/1.88521

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Hole and electron transport in SiO2films thermally grown on Si are observed by detecting the carrier arrival at the Si with a shallow junction detector. Carrier generation and injection near the Al‐SiO2interface are achieved by uv photons obtained from a Ne discharge. Following charging of an exposed SiO2surface by negative ions from a corona discharge, we find large amounts of holes near the Si‐SiO2interface with a dependence on substrate crystallographic orientation. The film charges up to an average field of 14.5±0.5 MV/cm. These findings suggest an alternative mechanism to impact ionization for initiation of breakdown in MOS structures.

ISSN:0003-6951    

DOI:10.1063/1.88522

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

A new method of fabricating solar cells is proposed, namely, using particulate semiconductor layers deposited in a binder by high‐speed emulsion coating technology. The feasibility of this approach was demonstrated by the fabrication of a solar cell using particulate ZnO layers with over 50% quantum efficiency, and 3% power conversion efficiency, to uv light.

ISSN:0003-6951    

DOI:10.1063/1.88508

出版商:AIP    

年代:1975

数据来源: AIP