1. |
Liquid‐phase‐epitaxial growth of single‐crystal LiNbO3thin film |
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Applied Physics Letters,
Volume 26,
Issue 9,
1975,
Page 489-491
Susumu Kondo,
Shintaro Miyazawa,
Shoichi Fushimi,
Kiyomasa Sugii,
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摘要:
The phase equilibrium of the LiVO3‐LiNbO3pseudobinary system has been investigated, and a LiNbO3single‐crystal thin film has been grown epitaxially onto the substrate by dipping ac‐plate LiTaO3substrate into a LiVO3flux solution. An x‐ray rocking curve indicated that the film had a high single crystallinity with good epitaxy. The composition ratio Li/Nb of the film was estimated to be close to the stoichiometric value Li/Nb≈1.0.
ISSN:0003-6951
DOI:10.1063/1.88229
出版商:AIP
年代:1975
数据来源: AIP
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2. |
Propagation of ultrasonic surface waves through molecular films |
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Applied Physics Letters,
Volume 26,
Issue 9,
1975,
Page 491-493
M. C. Jain,
M. H. Jericho,
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摘要:
The propagation characteristics of 75‐MHz ultrasonic waves through molecular films of arachidic acid have been investigated. On thermal cycling through the melting temperature the ordered films break up into islands of disordered arachidic acid. With the help of an ultrasonic pulse‐difference technique we could detect changes in the transmitted signal when arachidic acid islands as thin as 500 A˚ changed from the solid to the liquid state. It is suggested that similar experiments at higher frequencies could be of value in the investigation of phase changes and general structural properties of biological membranes.
ISSN:0003-6951
DOI:10.1063/1.88230
出版商:AIP
年代:1975
数据来源: AIP
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3. |
Surface stress and the normal mode of vibration of thin crystals :GaAs |
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Applied Physics Letters,
Volume 26,
Issue 9,
1975,
Page 493-495
J. Lagowski,
H. C. Gatos,
E. S. Sproles,
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摘要:
The normal mode of vibration of (111) GaAs wafers with a thickness below about 15 &mgr;m was found to depend strongly on the surface preparation and on the ambient atmosphere. This dependence was attributed to effects directly related to the surface stress &sgr;s. It was shown that &sgr;scan be evaluated from the natural frequency of vibration. The values of &sgr;s, in the 〈110〉 direction, for etched and unetched (111) GaAs wafers in room atmosphere were found to be 325 and 570 dyn/cm, respectively. It was further demonstrated that surface stress transients due to the adsorption processes (adsorption transients) can be determined by corresponding changes in the natural frequency of vibration.
ISSN:0003-6951
DOI:10.1063/1.88231
出版商:AIP
年代:1975
数据来源: AIP
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4. |
Plasma‐solid interaction in a theta pinch |
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Applied Physics Letters,
Volume 26,
Issue 9,
1975,
Page 496-499
W. C. Nunnally,
M. Kristiansen,
M. O. Hagler,
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摘要:
The interaction of a dense high‐temperature theta pinch plasma with 0.2‐mm‐diam spherical polystyrene pellets is reported. The pellets are not displaced by the plasma sheath implosion. They are not completely vaporized and the vaporized material is not ionized after many half‐cycles of theta pinch action. The vaporized material remains neutral in the midst of the hot plasma for the duration of the experiment. The cloud ionization is increased by focusing a 1‐JQ‐switched ruby laser on the cloud after the initial plasma vaporization.
ISSN:0003-6951
DOI:10.1063/1.88232
出版商:AIP
年代:1975
数据来源: AIP
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5. |
Atomic‐displacement mechanism in ion‐bombarded semiconductors and insulators |
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Applied Physics Letters,
Volume 26,
Issue 9,
1975,
Page 499-501
G. Dearnaley,
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摘要:
A two‐stage process of atomic displacement involving both elastic and inelastic energy transfer is presented, in order to account for the number and distribution of primary defects in ion‐bombarded semiconductors and insulators. Some experimental tests are proposed.
ISSN:0003-6951
DOI:10.1063/1.88233
出版商:AIP
年代:1975
数据来源: AIP
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6. |
Instant recording of the duration of a single mode‐locked Nd:YAG laser pulse |
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Applied Physics Letters,
Volume 26,
Issue 9,
1975,
Page 501-503
L. A. Lompre,
G. Mainfray,
J. Thebault,
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摘要:
An electro‐optic streak camera incorporating a storage memory video system has been developed and used to instantly visualize and record the shape of a 1.06‐&mgr;‐wavelength pulse generated by a mode‐locked Nd:YAG laser. The duration of a single laser pulse (∼30 psec) has been directly measured with and without laser amplification.
ISSN:0003-6951
DOI:10.1063/1.88234
出版商:AIP
年代:1975
数据来源: AIP
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7. |
High‐efficiency multiply pulsed copper vapor laser utilizing copper chloride as a lasant |
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Applied Physics Letters,
Volume 26,
Issue 9,
1975,
Page 504-505
Che J. Chen,
Gary R. Russell,
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摘要:
A copper vapor laser operating at a wavelength of 5106 A˚ and a pulse repetition rate up to 30 000 pulses/sec has been constructed and investigated. The best results obtained to date are as follows: energy and power density of 35 &mgr;J cm−3and 1.7 kW cm−3; pulsewidth 20 nsec; average density 0.7 W cm−3; laser efficiency 1&percent;.
ISSN:0003-6951
DOI:10.1063/1.88235
出版商:AIP
年代:1975
数据来源: AIP
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8. |
Two‐photon stimulated emission and pulse amplification |
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Applied Physics Letters,
Volume 26,
Issue 9,
1975,
Page 505-507
Horace P. Yuen,
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摘要:
Threshold conditions are given for the sustained operation of standing‐wave and long‐pulse traveling‐wave two‐photon lasers. Pulse shortening in long‐pulse two‐photon amplification, a behavior absent in the one‐photon case, is also demonstrated analytically.
ISSN:0003-6951
DOI:10.1063/1.88236
出版商:AIP
年代:1975
数据来源: AIP
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9. |
Transverse self‐sustained discharge CO2laser |
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Applied Physics Letters,
Volume 26,
Issue 9,
1975,
Page 508-509
David B. Cohn,
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摘要:
A scalable transverse self‐sustained discharge maintained between an array of flow‐stabilized cathodes and a common anode has demonstrated specific input powers of 800 W/g/sec and power densities of 100 W/cm3per cathode for CO2‐N2‐He mixtures at pressures of 50–70 Torr. Optical extraction at 15&percent; efficiency has been obtained under nonoptimized conditions in a geometry with the parallel fluid flow and discharge electric field perpendicular to the optical axis.
ISSN:0003-6951
DOI:10.1063/1.88237
出版商:AIP
年代:1975
数据来源: AIP
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10. |
Extension of absolute frequency measurements to 148 THz: Frequencies of the 2.0‐ and 3.5‐&mgr;m Xe laser |
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Applied Physics Letters,
Volume 26,
Issue 9,
1975,
Page 510-511
D. A. Jennings,
F. R. Petersen,
K. M. Evenson,
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摘要:
Absolute infrared frequency measurement has been extended to 148 THz (the highest frequency ever directly measured) with measurement of the two strong cw laser lines of Xe. The frequencies were synthesized with stabilized CO2and 3.39‐&mgr;m He‐Ne lasers and mixed on a W‐Ni point‐contact diode. The measured frequencies are &ngr;Xe(2.0&mgr;m)=147.915 850(15) THz and &ngr;Xe(3.5&mgr;m)=85.459 997(3) THz.
ISSN:0003-6951
DOI:10.1063/1.88238
出版商:AIP
年代:1975
数据来源: AIP
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