摘要:

The realization at room temperature of a high contrast ratio (20:1) and an on‐state reflectivity of 46.5% in an optically bistable switch involving strained InGaAs/GaAs (100) multiple‐quantum‐well‐based asymmetric Fabry–Perot reflection modulator, detector, and InGaAs/AlAs‐based resonant tunneling diode and an Si field‐effect transistor is reported.

ISSN:0003-6951    

DOI:10.1063/1.106270

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

A multistripe, single quantum well GaAs laser diode is passively mode locked without an external cavity. The intracavity saturable absorber is formed by ion implantation of the laser diode’s facet. The dose and energy of implanted ions were adjusted to achieve mode locking. This monolithically integrated laser diode and saturable absorber generates 40 GHz optical pulses with a pulse width of 5 ps.

ISSN:0003-6951    

DOI:10.1063/1.106271

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

A novel microthermopile for CO2laser radiation detection with a fast response time has been fabricated for the first time. The microthermopile is fabricated by high‐resolutione‐beam lithography and isotropic plasma etching of the substrate resulting in free‐standing hot junctions which are thermally isolated from the substrate. The good thermal isolation and small heat capacity of the hot junctions resulted in a responsivity of 60 V/W and a time constant of 20 &mgr;s. The device operates over the entire CO2laser wavelength range from 9.4 to 10.6 &mgr;m. Detailed measurements are presented for 10.6 &mgr;m operation.

ISSN:0003-6951    

DOI:10.1063/1.106272

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

A new type of in‐plane surface emitting laser structure with two 45° mirrors has been demonstrated. The device is a ridge waveguide laser with total reflection mirrors etched at 45° to the plane of the active layer, having an epitaxially grown distributed Bragg reflector. Continuous‐wave threshold current as low as 10 mA with 12% external differential quantum efficiency is achieved on a 5‐&mgr;m‐wide, 400‐&mgr;m‐long device.

ISSN:0003-6951    

DOI:10.1063/1.106273

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Efficient frequency doubling of a continuous‐wave semiconductor laser was attained by using a nonlinear optical fiber with a single crystal core of an organic 3,5‐dimethyl‐1‐ (4‐nitrophenyl)pyrazole. The second‐harmonic power generated with a 15 mm length of the fiber reached 0.16 mW from the incident 16.6‐mW fundamental laser power at 884 nm. Nonlinear optical properties of the crystal and a fabrication technique of the fiber are also reported.

ISSN:0003-6951    

DOI:10.1063/1.106274

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We report on fabrication of first‐order periodically domain‐inverted structure in LiTaO3by using selective proton exchange and heat treatment. Observation of the formation process of domain inversion makes it clear that the shape of the inverted region depends on time and temperature of heat treatment. As a result, enlargement of inversion width in heat treatment is suppressed by shortening the heat treatment time. First‐order periodically domain‐inverted structure, which has 3.5 &mgr;m period and 1.5 &mgr;m depth, is realized.

ISSN:0003-6951    

DOI:10.1063/1.106275

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Retraces of phase‐matching (PM) angles and noncritical phase‐matching temperatures for both type I and type II second harmonic generation in LiB3O5(LBO) are first demonstrated. By fitting to the measured PM angles at room temperature, new Sellmeier’s equations of LBO are obtained. Further analyzing the spectral and angle acceptances, we point out that LBO is particularly useful in doubling radiations near 1.3 &mgr;m such as 1.32 &mgr;m of Nd:YAG, 1.31 &mgr;m of Nd:YLF, and 1.34 &mgr;m of Nd:YAP.

ISSN:0003-6951    

DOI:10.1063/1.106276

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

A technique is presented to measure the flexural modulus of free‐standing thin metallic films from 1 to 25 &mgr;m thick. Lamb waves are excited in the film with a pulsed Nd:YAG laser, and detected using heterodyne interferometry. Variability in wave‐form structure is observed as a function of experimental parameters and film thickness. The first arrival of the symmetric Lamb mode can be unambiguously identified regardless of wave‐form shape, and is used to calculate the flexural modulus.

ISSN:0003-6951    

DOI:10.1063/1.106277

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

It is shown that the downstream etching of a photoresist with CF4/O2mixtures can be enhanced by a factor of at least 2 with addition of argon to the gas mixture. Analysis of the oxygen and fluorine atom densities with gas‐phase magnetic resonance downstream of the discharge suggests that argon metastables alter the homogeneous chemistry for fluorine atom production as well as the heterogeneous chemistry of photoresist chain scission.

ISSN:0003-6951    

DOI:10.1063/1.106278

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The time dependence of the Raman spectra of graphite is measured under 3‐keV Ar+‐ion irradiation by developing a real‐time Raman measurement apparatus. An ion flux of 3×1011ions/cm2 s is used and the time resolution of the Raman measurement is about 6 s. The lattice damage of graphite is evaluated by the relative intensity of the disorder‐induced peak (∼1360 cm−1) with respect to the Raman activeE2g2mode peak (∼1580 cm−1). An initial steep rise and a successive slow increase to saturation of the relative intensity ratio are observed.

ISSN:0003-6951    

DOI:10.1063/1.106279

出版商:AIP    

年代:1991

数据来源: AIP