摘要:

The temporal decay of the laser pulse which occurs in the afterglow of a pulsed discharge in pure CO2is shown to be controlled by the decay of the lower laser level. By varying the CO2pressure, the relaxation rate of the 02°0 level was found to be ∼ 1.3 × 106/Torr sec. The 10°0 level was found to be governed by two decay rates: a fast rate, ∼ 1.7 × 106/Torr sec, and a slow rate, ∼ 1.7 × 105/Torr sec. These rates were unaffected by the presence of He and are attributed to the V&sngbnd;V equilibration processes within the &ngr;1and &ngr;2mode of CO2.

ISSN:0003-6951    

DOI:10.1063/1.1654668

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Heterodiodes have been prepared by vapor‐deposition expitaxy ofn‐type CdS onp‐type CuGaS2. Typical diodes emit green light under forward bias with external quantum efficiencies of 0.1&percent; at 77 °K and 0.001&percent; at room temperature. The radiative recombination results from electron injection into the CuGaS2.

ISSN:0003-6951    

DOI:10.1063/1.1654669

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A study of the theory of the two‐beam two‐photon surface photoelectric effect, which is based on the steady‐state scattering theory, shows that, if the intensities of the two photon beams and the two frequencies are properly chosen, one can use this effect for the detection of the CO2frequency as well as other infrared frequencies. A numerical example for sodium is presented.

ISSN:0003-6951    

DOI:10.1063/1.1654670

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

It is shown that Raman spectra can be obtained from thin films by using the films as waveguides for the exciting laser light and efficiently collecting the scattered light. We have applied this technique to single‐crystal GaN films epitaxially grown onc‐plate Al2O3. The measured polarized Raman spectra enable all the Raman active modes to be determined for the GaN (point groupC6v).

ISSN:0003-6951    

DOI:10.1063/1.1654671

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Analysis indicates a reflection coefficient of unity for Bleustein‐Gulyaev surface waves normally incident upon a rectangular edge of a crystal of classC6v, having both the propagating surface and the end surface metallized.

ISSN:0003-6951    

DOI:10.1063/1.1654672

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A cw dye laser is described which allows short‐term frequency stability of 10–15 MHz. An experiment using this laser to measure the hyperfine absorption spectrum of the sodiumD2line is described. Results from this experiment are presented showing a resolution of theF= 2 → 3 and theF= 2 → 2 transitions.

ISSN:0003-6951    

DOI:10.1063/1.1654673

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Lasing has been observed in several semiconductors pumped by electrons from a pulsed 5‐to 20‐kV vacuum arc. This method of pumping eliminates the hot‐cathode multielement electron gun and magnetic focusing means usually required for electron‐beam generation. At temperatures of 77 K and room temperature, CdS has shown well‐defined lasing with narrow directional output and sharp spectral lines. CdSe and GaAs have shown similar evidence of lasing at 77 K. The new technique opens up some possibilities for simple compact laser devices.

ISSN:0003-6951    

DOI:10.1063/1.1654674

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Devices are demonstrated for modulating light in optical waveguides using nematic liquid crystals. 100&percent; modulation and response times of 35 &mgr;sec are achieved. Coupling of light into waveguide modes of a liquid layer is demonstrated.

ISSN:0003-6951    

DOI:10.1063/1.1654675

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A parametric oscillator has been employed to pump ground‐state carbon monoxide molecules in a gas‐phase sample directly to the second vibrational level. The decay of the population of this level via vibration‐vibration (V‐V) energy transfer with ground‐state molecules, CO(v= 2) + CO(v= 0) → CO(v= 1) + CO(v= 1), has been monitored as a function of pressure, resulting in the first experimental determination of the rate constant for this process, 6.2 × 104sec−1Torr−1at 295 °K.

ISSN:0003-6951    

DOI:10.1063/1.1654676

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Laser operation of GaAs1−xPx:N (x= 0.37, 77 °K) has been achieved by pumping the crystalbelowthe fundamental energy gap on the NN3transition. Photoluminescence experiments on the non‐N‐doped epitaxial GaAs1−xPxunderlying the thin (≤ 25 &mgr;) N‐doped layer indicate that the absorption of He&sngbnd;Ne laser pump photons in GaAs1−xPx:N (x= 0.37) occurs only on the NN3transition.

ISSN:0003-6951    

DOI:10.1063/1.1654677

出版商:AIP    

年代:1973

数据来源: AIP