1. |
LASER EMISSION FROM METAL‐SEMICONDUCTOR BARRIERS ON PbTe AND Pb0.8Sn0.2Te |
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Applied Physics Letters,
Volume 16,
Issue 10,
1970,
Page 375-377
K. W. Nill,
A. R. Calawa,
T. C. Harman,
J. N. Walpole,
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摘要:
Laser emission is obtained from forward biased evaporated metal barriers on degeneratep‐PbTe andp‐Pb0.8Sn0.2Te atT=4.2°K. Metals with small work functions such as In, Pb, and Zn produce a degenerate invertedn‐type surface region onp‐type samples without chemical doping. Low‐threshold laser emission has been obtained from these barriers onp‐PbTe at &lgr; = 6.4&mgr; and from Pb barriers onp‐Pb0.8Sn0.2Te at &lgr; = 15&mgr;.
ISSN:0003-6951
DOI:10.1063/1.1653031
出版商:AIP
年代:1970
数据来源: AIP
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2. |
TRANSIENT HIGH‐DENSITY INJECTION IN A SEMICONDUCTOR WITH TRAPS |
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Applied Physics Letters,
Volume 16,
Issue 10,
1970,
Page 377-380
Betsy Ancker‐Johnson,
William P. Robbins,
David B. Chang,
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摘要:
The properties of high‐density injection intop‐InSb at 77 °K are compared with theory. An extension of Dean's theory is in satisfactory agreement with the extensive observations which include density‐dependent growth times.
ISSN:0003-6951
DOI:10.1063/1.1653032
出版商:AIP
年代:1970
数据来源: AIP
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3. |
HIGH‐FIELD PHOTOCONDUCTIVITY OF AMORPHOUS GeTe and GeSe FILMS |
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Applied Physics Letters,
Volume 16,
Issue 10,
1970,
Page 380-382
P. J. Stiles,
L. L. Chang,
L. Esaki,
R. Tsu,
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摘要:
The photoconductivity edge in amorphous films of GeTe or GeSe is found to shift toward lower photon energies with the application of high electric fields. Electrical measurements indicate that the shift is a bulk effect, not due to junctions at the contact‐semiconductor interface.
ISSN:0003-6951
DOI:10.1063/1.1653033
出版商:AIP
年代:1970
数据来源: AIP
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4. |
INTERACTION BETWEEN B ATOMS AND DEFECTS PRODUCED BY Hg BOMBARDEMENT IN SILICON |
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Applied Physics Letters,
Volume 16,
Issue 10,
1970,
Page 382-383
G. Della Mea,
A. V. Drigo,
P. Mazzoldi,
G. Nardelli,
R. Zannoni,
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摘要:
The lattice disorder produced by 42‐keV Hg ions implanted in B‐doped Si at room temperature has been measured by means of the channeling and of the backscattering of 2‐MeV He ions. An annealing effect connected to B concentration is observed.
ISSN:0003-6951
DOI:10.1063/1.1653034
出版商:AIP
年代:1970
数据来源: AIP
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5. |
COMPARISON OF HF AND DF CONTINUOUS CHEMICAL LASERS: I. POWER |
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Applied Physics Letters,
Volume 16,
Issue 10,
1970,
Page 384-386
Donald J. Spencer,
Harold Mirels,
Theodore A. Jacobs,
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摘要:
A continuous DF chemical laser is reported. Population inversion is obtained by diffusing D2into a supersonic free jet containing F atoms. Output power of the DF laser is compared with a similar HF laser previously reported. The ratio of DF to HF laser output power is 0.7 for fixed supersonic jet conditions and the same molar flow of H2and D2. The efficiency of conversion of chemical energy to laser energy is approximately 12 and 8 % for the HF and DF lasers, at power levels of 475 and 340 W, respectively.
ISSN:0003-6951
DOI:10.1063/1.1653035
出版商:AIP
年代:1970
数据来源: AIP
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6. |
COMPARISON OF HF AND DF CONTINUOUS CHEMICAL LASERS: II. SPECTROSCOPY |
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Applied Physics Letters,
Volume 16,
Issue 10,
1970,
Page 386-387
M. A. Kwok,
R. R. Giedt,
R. W. F. Gross,
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摘要:
Continuous laser action has been observed on several HF and DF vibrational‐rotational transitions. The HF lases between 2.6 and 2.9&mgr; and DF lases between 3.6 and 4.1&mgr;. The lines are identified and the relative intensities are shown.
ISSN:0003-6951
DOI:10.1063/1.1653036
出版商:AIP
年代:1970
数据来源: AIP
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7. |
MAGNETOPLASMA RESONANCE IN SEMICONDUCTOR POWDERS |
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Applied Physics Letters,
Volume 16,
Issue 10,
1970,
Page 387-391
K. K. Chen,
F. L. Galeener,
J. K. Furdyna,
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摘要:
We report a new class of resonant interactions of circularly polarized microwaves with powderedn‐type InSb, which is observed only in the cyclotron resonance inactive polarization, at magnetic fields independent of particle size. The new powder resonance is a multiparticle analog of the single‐particle magnetoplasma resonance first reported by Dresselhaus, Kip, and Kittel. Both the position and strength of the observed powder resonance are discussed quantitatively using the Rayleigh extinction cross section for a single particle.
ISSN:0003-6951
DOI:10.1063/1.1653037
出版商:AIP
年代:1970
数据来源: AIP
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8. |
POPULATION INVERSION BETWEEN &Dgr;MF= 0 HYPERFINE SUBLEVELS OF RUBIDIUM AND CESIUM |
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Applied Physics Letters,
Volume 16,
Issue 10,
1970,
Page 391-393
F. A. Franz,
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摘要:
Optical pumping of Rb or Cs subject to relaxation through the formation of relatively long‐lived alkali‐rare‐gas molecular complexes is shown to yield a unique distribution of population throughout the magnetic sublevels of the alkali ground state. Large overpopulations of the sublevels of the upper hyperfine state are obtained for a particular range of the ratio of pumping rate to relaxation rate. The technique may make feasible the construction of a Cs maser.
ISSN:0003-6951
DOI:10.1063/1.1653038
出版商:AIP
年代:1970
数据来源: AIP
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9. |
COHERENT SCATTERING OF HOT ELECTRONS IN THIN GOLD FILMS |
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Applied Physics Letters,
Volume 16,
Issue 10,
1970,
Page 393-395
R. D. Gould,
R. A. Collins,
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摘要:
Hot‐electron emission has been observed through the top surface of the Au electrode in Al&sngbnd;SiO&sngbnd;Au cold cathodes. Previous investigations have indicated that electrons which have undergone coherent scattering in the Au electrode may only be emitted from pinhole edges. The present measurements are found to be consistent with the existing theory.
ISSN:0003-6951
DOI:10.1063/1.1653039
出版商:AIP
年代:1970
数据来源: AIP
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10. |
LASER INTERACTION WITH A NICKEL‐SAPPHIRE INTERFACE |
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Applied Physics Letters,
Volume 16,
Issue 10,
1970,
Page 395-396
R. A. Masumura,
M. R. Achter,
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摘要:
The presence of a 1000‐Å‐thick evaporated nickel layer on the exit surface of a sapphire disk lowers the laser power required for crystallographic‐type damage. A tentative explanation involves a shock phenomenon induced by a confined metal vapor.
ISSN:0003-6951
DOI:10.1063/1.1653040
出版商:AIP
年代:1970
数据来源: AIP
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