摘要:

The effects of adding electronegative SF6to discharge pumped HgBr and HgCl lasers were compared with those without SF6. A 50% and 40% improvement of the output energies for HgBr and HgCl lasers was realized by adding SF6to the optimized gas mixture.

ISSN:0003-6951    

DOI:10.1063/1.96838

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Two‐dimensional arrays of 16 laser elements have been fabricated using the mass transport process. Good uniformity, low threshold current (typically 11–14 mA per element), and high total cw power (up to 0.27 W at 22 °C) were obtained.

ISSN:0003-6951    

DOI:10.1063/1.97025

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A novel, fast, transverse electric discharge circuit is used to pump a 5‐atm XeCl* excimer laser. The measured discharge characteristics agree with values predicted from critically damped circuit equations. Interferometric measurements of the electron density,n, as function of time indicate a maximumne=1.6×1015cm−3and suggest a constant electron drift velocityvd=1.3×106cm/s.

ISSN:0003-6951    

DOI:10.1063/1.96839

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Tungsten bronze ferroelectric crystals SrxBa1−xNb2O6and Ba2−xSrxK1−yNayNb5O15have been investigated for potential electro‐optic uses at millimeter wave carrier frequencies between 55 and 110 GHz. Indices of absorption and refraction at temperatures between 20 and 300 K were derived from measurements of transmittance spectra containing Fabry–Perot fringes produced by crystal surface reflections. The anisotropies observed in both indices at these frequencies are huge compared with those at optical frequencies. Absorption in both materials decreases markedly upon cooling, but only for incident waves polarized along the crystal polar axis.

ISSN:0003-6951    

DOI:10.1063/1.96840

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Taking into account the temperature rise under the electron beam, phase separation in a supersaturated B2O3‐PbO glass is shown to be enhanced by electron irradiation. Coagulation of PbO‐rich particles is observed duringinsituelectron microscopic experiments. This mechanism of coalescence is discussed. Using the Smoluchowski model of coagulation we show that the glass viscosity is drastically lowered: typically eight to nine orders of magnitude at 270 °C and only one order at 420 °C. This effect is shown to disappear almost instantaneously when irradiation is stopped.

ISSN:0003-6951    

DOI:10.1063/1.96841

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The composition of particle flux to deposit hydrogenated amorphous silicon films in a glow discharge is controlled by a combined electrostatic‐magnetic deflection technique. As a result, the films are formed firstly without hydrogen ion flux, secondly by neutral flux only, and thirdly by all species fluxes. Comparison of these films reveals the significant role of hydrogen in the surface reactions. Hydrogen breaks the Si–Si bond, decreases the sticking probability of the Si atom, and replaces the SiH bond by a SiH2bond to increase the hydrogen content of the films.

ISSN:0003-6951    

DOI:10.1063/1.96842

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Real‐time measurements of the melt and solidification dynamics during pulsed laser irradiation have permitted elucidation of the processes which lead to the formation of very thin (∼2 nm) buried impurity layers in amorphous silicon. These novel structures are found to result from interfacial segregation at two moving liquid silicon‐amorphous silicon interfaces—one propagating toward the surface and the other propagating from the surface inward. The velocities of these interfaces are found to be remarkably low, ranging from 1 to 8 m/s for melts of <20 ns duration.

ISSN:0003-6951    

DOI:10.1063/1.96843

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The onset of plastic yield in undoped and highly indium‐doped GaAs, prepared by liquid encapsulated Czochralski (LEC) growth, has been determined by uniaxial compression tests over the temperature range 250–600 °C. No distinguishable difference in yield stress is observed between undoped and indium‐doped GaAs; however, LEC GaAs exhibits a modest increase in yield strength over undoped Bridgman‐grown material. The absence of a significant increase in the yield strength of indium‐doped over undoped LEC GaAs implies that the mechanism by which indium reduces the dislocation density in GaAs is significantly effective only at temperatures near the melting point.

ISSN:0003-6951    

DOI:10.1063/1.96844

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Semi‐insulating crystals of InP with resistivities of 1–3×106&OHgr; cm have been grown by the liquid encapsulated Czochralski method from melts co‐doped with Ti, a deep donor located 0.62±0.02 eV below the conduction band, and either Zn, Cd, or Be. This technique should make it possible to obtain crystals with resistivities of 107–108&OHgr; cm, which would be of interest for integrated circuit applications if their thermal stability were found to exceed that of Fe‐doped semi‐insulating InP.

ISSN:0003-6951    

DOI:10.1063/1.96845

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Diffusion of boron from ion implanted polycrystalline silicon source through 12.5 nm oxides was measured as a function of annealing ambience and doping concentrations of phosphorus or arsenic in the polycrystalline silicon. For comparison, boron ion implanted into 500 nm oxides was also investigated. In both cases, annealing in forming gas (90% N2, 10% H2) increases the diffusion rate of boron over that in nitrogen and the rate increase is the result of a large increase in the pre‐exponential term. Diffusion of ion implanted boron in oxides is much slower than that from an ion implanted polycrystalline silicon source. The lowering of the rate is the result of the five orders of magnitude decrease in the pre‐exponential term, even though concurrently there is also a decrease in the activation energy. Co‐doping of polycrystalline silicon with either phosphorus or arsenic lowers the pre‐exponential term by approximately 10%. Therefore, we conclude that boron diffusion through oxides is entropy dominated.

ISSN:0003-6951    

DOI:10.1063/1.96846

出版商:AIP    

年代:1986

数据来源: AIP