摘要:

Planar Al&sngbnd;nSi and PtSi&sngbnd;nSi Schottky barriers with diffusedp‐type guard rings have been fabricated on (111) and (100) silicon surfaces. The barriers have been produced by sputtering the metals on sputter‐etched silicon surfaces. For Al&sngbnd;nSi barriers the barrier height is 0.72 eV on (111) surfaces and 0.81 eV on (100) surfaces, as determined from the forwardI‐Vcharacteristic. This difference in barrier potential has been confirmed byC‐Vmeasurements. No difference in barrier height is found for PtSi&sngbnd;nSi barriers made on (111) and (100) surfaces. A qualitative explanation is given for the experimental results in terms of strong or weak coupling of surface states to the metal.

ISSN:0003-6951    

DOI:10.1063/1.1654431

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Nd‐doped glass (3.5 wt% Nd2O3) is sputtered on Corning No. 7059 glass to make an active thin‐film waveguide. The thin film is pumped with a Xe flash tube, and the amplification of 1.06‐&mgr;m laser light that propagates in the thin film is observed.

ISSN:0003-6951    

DOI:10.1063/1.1654432

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The field‐dependent energy relaxation times of electrons in GaAs and InP have been determined from the 34‐GHz complex conductivity measured in the presence of a dc heating field. The values for GaAs and InP are 2.5 and 1.7 psec, respectively, at low fields, but increase rapidly near the bulk‐effect threshold field values. Moreover, the relaxation time for InP is found to be less than that for GaAs at all fields. These results are in qualitative accord with predictions based on velocity‐field measurements.

ISSN:0003-6951    

DOI:10.1063/1.1654433

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Proton bombardment has been used to maken‐pjunction ir detectors from epitaxial PbTe films on BaF2substrates. When cooled at 77°K, these detectors are background limited atf/0.8; further reduction of the field of view gives Johnson‐noise‐limited peak detectivities of 6×1011cm Hz1/2W−1atf/20. The peak quantum efficiencies are 0.40–0.47.

ISSN:0003-6951    

DOI:10.1063/1.1654434

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The gases and cathode of a TEA CO2laser are irradiated with uv radiation. The resulting photoionization and photoemission initiate and assist in sustaining a high‐energy low‐field‐strength discharge. Output energy of 50 J/liter at an efficiency of 15% has been obtained in an initial demonstration.

ISSN:0003-6951    

DOI:10.1063/1.1654435

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

An experiment to observe propagation and compression of an intense relativistic electron beam in a tapered linear pinch resulted in beam penetration of the magnetic field constriction at the discharge's narrow end, contradicting the single‐particle model verified in earlier experiments using axially uniform pinches. Transverse beam pressure overcame the net pinch pressure, expanding the magnetic constriction and allowing beam passage.

ISSN:0003-6951    

DOI:10.1063/1.1654436

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Results are given on the current of holes through an insulating double layer of SiO2and Si3N4on silicon. The holes originated from an avalanchingp‐njunction in the silicon and were injected into the SiO2. The results can be explained by assuming a space‐charge‐limited hole current in the SiO2in the presence of traps exponentially distributed in energy. A value of about 10−3cm2V−1sec−1was found for &mgr;, the hole mobility in the SiO2.

ISSN:0003-6951    

DOI:10.1063/1.1654437

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

A recently developed solid‐state‐laser‐simulated tuning technique has been used to investigate the coincidence of Er : YAG laser emission with methane (CH4) gas absorption in the 1.6‐&mgr;m region. When the laser is operated under maximum‐bandwidth conditions, full coincidence is obtained, thus enabling possible remote sensing of CH4in the eye‐safe region. Unresolved fine structure of the CH4absorption line was indicated.

ISSN:0003-6951    

DOI:10.1063/1.1654438

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The magnetic properties of single‐crystalline platelets of MnBi were studied with the aid of the Kerr effect, and some physical properties were analyzed by using an x‐ray microanalyzer. The hysteresis loop has reentrant characteristics, and the coercive force is very small. A domain spot nucleated by thermal writing continues to expand by wall motion, and finally the platelet is almost demagnetized.

ISSN:0003-6951    

DOI:10.1063/1.1654439

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Nitrogen ions (N2+) are implanted intop‐type Si samples to a dose of 6×1014cm−2at 10 keV. When the samples, annealed at temperatures higher than 535°C, are irradiated nonuniformly, photovoltages are observed parallel to the implanted surface. This lateral photovoltaic effect has confirmed that ann‐type layer is formed by nitrogen implantation. The lateral photovoltage is a linear function of the irradiation position. The dependence of the photovoltage on irradiation wavelength (0.70–1.40 &mgr;) and on anneal temperature (up to 850°C) has also been investigated.

ISSN:0003-6951    

DOI:10.1063/1.1654440

出版商:AIP    

年代:1972

数据来源: AIP