1. |
Bulk acoustic wave interaction with guided optical waves |
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Applied Physics Letters,
Volume 23,
Issue 2,
1973,
Page 53-54
G. B. Brandt,
M. Gottlieb,
J. J. Conroy,
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摘要:
An interaction between longitudinal or shear bulk acoustic waves and guided optical waves has been observed in single‐mode and multimode polyurethane and sputtered glass optical waveguides. This interaction produces a number of effects — namely, mode conversion, amplitude modulation, and phase modulation — depending upon whether shear or longitudinal sound is present. Mode conversion between TE and TM waveguide modes occurs with shear sound; longitudinal sound produces amplitude and phase modulation of the guided light. The bulk acoustic wave effect offers promise for producing high‐data‐rate integrated optical modulators.
ISSN:0003-6951
DOI:10.1063/1.1654803
出版商:AIP
年代:1973
数据来源: AIP
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2. |
Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire |
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Applied Physics Letters,
Volume 23,
Issue 2,
1973,
Page 55-56
G. D. O'Clock,
M. T. Duffy,
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摘要:
Experimental results are reported on the coupling of rf energy and acoustic surface waves in aluminum nitride (AlN) on sapphire and gallium nitride (GaN) on sapphire material systems. Metallized interdigital transducers are deposited on the AlN and GaN surfaces to generate and detect the acoustic surface wave energy.
ISSN:0003-6951
DOI:10.1063/1.1654804
出版商:AIP
年代:1973
数据来源: AIP
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3. |
Reflective‐mode ferroelectric‐photoconductor image storage and display devices |
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Applied Physics Letters,
Volume 23,
Issue 2,
1973,
Page 57-59
C. E. Land,
W. D. Smith,
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摘要:
A new type of image storage and display device, called the Fericon, is described in which the image is stored by means of electrically induced surface deformation in ferroelectric ceramics. The preferred method of viewing or projecting the stored image is by reflected light using Schlieren optics. The device has nonvolatile storage and the capability of selective erasure of the stored image.
ISSN:0003-6951
DOI:10.1063/1.1654805
出版商:AIP
年代:1973
数据来源: AIP
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4. |
Valence band density of states and core level shifts of AgGaS2as determined by x‐ray photoemission |
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Applied Physics Letters,
Volume 23,
Issue 2,
1973,
Page 60-61
M. J. Luciano,
C. J. Vesely,
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摘要:
The first measurements of x‐ray‐induced electron emission for AgGaS2, a I‐III‐VI2chalcopyrite compound, are reported. The measurements include both the valence band density of states and electronic core levels. The Ag 4dlevels were found to be quite narrow and located 3.4 eV below the top of the valence band partially overlapping the heavy‐holep‐like bands which have a maximum at 1.1 eV. Thes‐like band was observed at 11.7 eV.
ISSN:0003-6951
DOI:10.1063/1.1654806
出版商:AIP
年代:1973
数据来源: AIP
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5. |
Anomalous structure in appearance potential spectra |
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Applied Physics Letters,
Volume 23,
Issue 2,
1973,
Page 62-63
K. N. Ramachandran,
C. D. Cox,
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摘要:
A number of anomalous peaks were found in the low‐energy end of the appearance potential spectrum obtained from a high‐purity iron foil. The structure changed considerably when the foil was contaminated from an oxide‐coated filament. These peaks do not correspond to any known absorption edge of the specimen.
ISSN:0003-6951
DOI:10.1063/1.1654807
出版商:AIP
年代:1973
数据来源: AIP
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6. |
New electrochromic memory display |
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Applied Physics Letters,
Volume 23,
Issue 2,
1973,
Page 64-65
C. J. Schoot,
J. J. Ponjee,
H. T. van Dam,
R. A. van Doorn,
P. T. Bolwijn,
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摘要:
The principle of a new electrochromic display based on an oxidation‐reduction reaction of an organic compound of the viologen family is described. The result is a display having a built‐in memory, high contrast, a low switching voltage, and a low mean power consumption.
ISSN:0003-6951
DOI:10.1063/1.1654808
出版商:AIP
年代:1973
数据来源: AIP
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7. |
Deep‐etched silicon diode array target |
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Applied Physics Letters,
Volume 23,
Issue 2,
1973,
Page 66-67
D. K. Schroder,
R. A. Wickstrom,
P. Rai‐Choudhury,
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摘要:
A silicon diode array target is described in which heavilyp+‐doped silicon epitaxial contacts are grown on pedestals, formed by selective etching of then‐type silicon substrate. It offers the advantage that the top of thep+contacts can be raised significantly higher above the oxide than is possible with other target structures. Experimentally, such targets have shown an excellent modulation transfer function (MTF), low lag, good dark‐current behavior, and compatibility with tube and photocathode fabrication techniques.
ISSN:0003-6951
DOI:10.1063/1.1654809
出版商:AIP
年代:1973
数据来源: AIP
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8. |
Lasing from the upper vibrational levels of a flash‐initiated H2&sngbnd;F2laser |
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Applied Physics Letters,
Volume 23,
Issue 2,
1973,
Page 68-70
S. N. Suchard,
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摘要:
Laser action has been observed from theP‐branch vibration‐rotation bands of the HF molecule fromv= 6→5 tov= 1→0 transitions. In addition, the time‐resolved spectral behavior of this He‐diluted H2&sngbnd;F2chain reaction chemical laser has been recorded. The HF* lasing molecules were produced by the reaction of a 50‐Torr gaseous mixture with mole ratio H2/F2/He=0.5/1/40 initiated by flash photolysis. In contrast to earlier results, strong lasing was found on thev= 6→5 and 5→4 transitions of the HF molecule. Within some of the bands from which lasing was observed, the time sequencing of transitions suggests non‐Boltzmann distributions of the rotational states.
ISSN:0003-6951
DOI:10.1063/1.1654810
出版商:AIP
年代:1973
数据来源: AIP
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9. |
Field and time thresholds for the electrical fixation of holograms recorded in (Sr0.75Ba0.25)Nb2O6crystals |
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Applied Physics Letters,
Volume 23,
Issue 2,
1973,
Page 71-72
F. Micheron,
G. Bismuth,
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摘要:
We demonstrate that the electrical fixation of holograms recorded in (Sr0.75Ba0.25)Nb2O6involves local polarization switching; the fixing threshold is found to be nearly the average coercive fieldEc= 970 V/cm, and the minimum fixing time is the polarization switching time. The diffraction efficiency enhancement of fixed holograms is attributed to the photoinduced space charge field's overcancellation by ionic displacements associated with the polarization switching.
ISSN:0003-6951
DOI:10.1063/1.1654811
出版商:AIP
年代:1973
数据来源: AIP
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10. |
Thin‐film calorimeter for low‐energy laser pulse measurements |
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Applied Physics Letters,
Volume 23,
Issue 2,
1973,
Page 73-74
G. Koren,
Y. Yacoby,
H. Lotem,
M. Kosower,
G. Greenwald,
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摘要:
A laser pulse calorimeter which enables measurements of energies within the region of 20–0.02 mJ is described. The calorimeter is a temperature‐sensitive resistor, composed of a thin film of black V2O5evaporated on an 8‐&mgr; sapphire substrate of 1‐cm diameter. The characteristic peak reading pulse responsivity is 1 mV/mJ, and the accuracy of the measurements at 0.1 mJ is approximately 7%. The calorimeter is sensitive primarily to the beams' energy, and its response is independent of the shape and size of the incident beam of a given energy.
ISSN:0003-6951
DOI:10.1063/1.1654812
出版商:AIP
年代:1973
数据来源: AIP
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