1. |
ACOUSTIC ATTENUATION OF A SINGLE‐DOMAIN LITHIUM NIOBATE CRYSTAL AT MICROWAVE FREQUENCIES |
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Applied Physics Letters,
Volume 9,
Issue 4,
1966,
Page 135-136
C. P. Wen,
R. F. Mayo,
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摘要:
The pulse echo technique is employed to measure the acoustic wave attenuation along thecaxis of a single‐domain lithium niobate crystal at room temperature up tocband frequencies. Initial experiments show that the frequency dependence of the attenuation is nearly quadratic as predicted by theory. Approximately 13 dB of loss per &mgr;sec of time delay is observed at 5.5 GHz. The relatively low‐loss characteristics, coupled with the self‐transduction properties, make lithium niobate a leading candidate for microwave room‐temperature delay line applications.
ISSN:0003-6951
DOI:10.1063/1.1754679
出版商:AIP
年代:1966
数据来源: AIP
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2. |
SIMULATION OF SORET ZONE PLATE BY A SYSTEM OF LONGITUDINALLY DISTRIBUTED CO‐AXIAL APERTURES |
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Applied Physics Letters,
Volume 9,
Issue 4,
1966,
Page 136-138
Re´al Tremblay,
Manoranjan De,
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ISSN:0003-6951
DOI:10.1063/1.1754680
出版商:AIP
年代:1966
数据来源: AIP
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3. |
OBSERVATION OF INTERFACIAL DISLOCATIONS IN THIN (100) AND (111) ELECTRODEPOSITS OF NICKEL ON COPPER |
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Applied Physics Letters,
Volume 9,
Issue 4,
1966,
Page 138-140
Earl R. Thompson,
Kenneth R. Lawless,
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摘要:
Bicrystal metal films were prepared by electrodeposition of nickel on evaporated, single‐crystal copper films. Electron microscopic examination of the bicrystal films revealed interfacial dislocations which aid in reducing the misfit strain between the crystals. In both (100) and (111) bicrystals, misfit dislocations, aligned in <110> directions, were observed with Burgers vectors not contained in the interfacial plane. Glide of pre‐existing or surface nucleated dislocations is suggested as the method by which this type of misfit dislocation is produced.
ISSN:0003-6951
DOI:10.1063/1.1754681
出版商:AIP
年代:1966
数据来源: AIP
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4. |
SWITCHING AND LOW‐FIELD BREAKDOWN INn‐GaAs BULK DIODES |
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Applied Physics Letters,
Volume 9,
Issue 4,
1966,
Page 140-142
John A. Copeland,
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摘要:
Switching effects have been observed in the current vs voltage curves ofn‐type GaAs diodes with resistivities between 0.3 and 5 &OHgr;‐cm. After switching, the diodes go into a constant‐voltage avalanche breakdown state with a sustaining field of 4500 V/cm. These effects are attributed to a peak in the hole generation rate &agr; between 3,000 and 10,000 V/cm caused by high energy electrons in the (000) valley of the conduction band.
ISSN:0003-6951
DOI:10.1063/1.1754682
出版商:AIP
年代:1966
数据来源: AIP
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5. |
INTERACTION OF LINEARLY AND CIRCULARLY POLARIZED FIELDS IN A LASER AMPLIFIER WITH AN AXIAL MAGNETIC FIELD |
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Applied Physics Letters,
Volume 9,
Issue 4,
1966,
Page 142-145
Andrew Dienes,
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ISSN:0003-6951
DOI:10.1063/1.1754683
出版商:AIP
年代:1966
数据来源: AIP
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6. |
HIGH‐RESISTIVITYp‐TYPE CADMIUM SULFIDE |
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Applied Physics Letters,
Volume 9,
Issue 4,
1966,
Page 145-146
Fred Chernow,
Eric Courtens,
Mark Douma,
Larry Goodman,
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摘要:
p‐Type conductivity and stored electron charge densities as large as 1.3 × 10−7coul/cm2have been observed in high‐resistivity CdS crystals. These properties were studied by photovoltaic, photopolarization, and thermo‐electric power measurements.
ISSN:0003-6951
DOI:10.1063/1.1754684
出版商:AIP
年代:1966
数据来源: AIP
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7. |
THE MAGNETOSTRICTION OF SILICON‐DOPED YTTRIUM IRON GARNET (YIG) |
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Applied Physics Letters,
Volume 9,
Issue 4,
1966,
Page 147-148
J. F. Dillon,
E. M. Gyorgy,
J. P. Remeika,
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摘要:
The magnetostriction constants &lgr;100and &lgr;111have been measured at room temperature for YIG single crystals in which a small fraction of the iron ions are replaced by silicon. The magnetically active impurity is believed to be divalent iron which compensates the Si4+. As the silicon concentration reaches about 0.05 Si atoms/Y3Fe5O12, both &lgr;'s pass through zero. In crystals of this composition the magnetization is largely decoupled from the strain distribution in the crystal. A peak in low‐frequency permeability and simple easily interpreted domain structures correspond to this &lgr; = 0 composition.
ISSN:0003-6951
DOI:10.1063/1.1754685
出版商:AIP
年代:1966
数据来源: AIP
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8. |
THE USE OF VACUUM‐EVAPORATED GOLD FILMS TO INVESTIGATE THE OXIDATION MECHANISM OF METALS |
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Applied Physics Letters,
Volume 9,
Issue 4,
1966,
Page 148-150
J. P. Foster,
R. J. Reynik,
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摘要:
Vacuum‐evaporated gold films were used as inert markers to study the oxidation mechanism of cobalt at 850°C. Gold‐marked and unmarked specimens were simultaneously oxidized for 138 hr. With the exception of the gold marker appearing as a dispersed row of spheriods within the CoO layer closest to the metal‐oxide interface, and the random distribution of voids in the specimens, the microstructures of the gold‐marked and unmarked specimens were identical, and are in agreement with microstructures reported in the literature.
ISSN:0003-6951
DOI:10.1063/1.1754686
出版商:AIP
年代:1966
数据来源: AIP
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9. |
DIRECT SPECTROSCOPIC DETECTION OF RUBY LASER GIANT PULSE OFF‐AXIAL MODE STRUCTURE |
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Applied Physics Letters,
Volume 9,
Issue 4,
1966,
Page 150-152
Daniel J. Bradley,
Malcolm S. Engwell,
A. W. McCullough,
George Magyar,
Martin C. Richardson,
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ISSN:0003-6951
DOI:10.1063/1.1754687
出版商:AIP
年代:1966
数据来源: AIP
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10. |
THERMOELECTRIC CYCLOTRON RESONANCE IN SEMICONDUCTORS |
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Applied Physics Letters,
Volume 9,
Issue 4,
1966,
Page 153-154
P. D. Fisher,
Peter E. Wagner,
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ISSN:0003-6951
DOI:10.1063/1.1754688
出版商:AIP
年代:1966
数据来源: AIP
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