1. |
Thin‐MIS‐Structure Si Negative‐Resistance Diode |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 269-270
Tatsuo Yamamoto,
Mitsutaka Morimoto,
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摘要:
We have realized a high‐switching‐speed Si S‐shaped negative‐resistance diode having a thin MIS structure where the thickness of the SiO2layer is less than 100 Å. It has ap‐n‐I(insulator)‐M(metal) structure in contrast with a Shockley diode. The threshold and sustaining voltages are about 20 and 2–3 V, respectively. The regenerative nature of this device may be related to the minority carrier injection into the interface between thenlayer and the insulating layer, and electron trapping in the interface states.
ISSN:0003-6951
DOI:10.1063/1.1654143
出版商:AIP
年代:1972
数据来源: AIP
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2. |
Broadband Superconducting Quantum Magnetometer |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 270-272
R. A. Kamper,
M. B. Simmonds,
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摘要:
We describe the design, operation, and performance of a superconducting quantum interference device (SQUID) which operates at a frequency of 9 GHz. It is sensitive to variations of magnetic field in a frequency band from 0 to 1 GHz.
ISSN:0003-6951
DOI:10.1063/1.1654144
出版商:AIP
年代:1972
数据来源: AIP
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3. |
Nonlinear Susceptibility of GaP; Relative Measurement and Use of Measured Values to Determine a Better Absolute Value |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 272-275
B. F. Levine,
C. G. Bethea,
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摘要:
We have measured the ratiod36(GaP)/d11(SiO2) = 185 ± 10% at 1.318 &mgr;. By using this value together with other values in the literature, we determine a better set of absolute values for the nonlinear susceptibility.
ISSN:0003-6951
DOI:10.1063/1.1654145
出版商:AIP
年代:1972
数据来源: AIP
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4. |
Assessment of Tourmaline as an Acoustic‐Surface‐Wave‐Delay Medium |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 275-276
M. F. Lewis,
E. Patterson,
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摘要:
Measurements and calculations have shown tourmaline to be a useful surface‐acoustic‐wave‐delay medium. In particular, its combination of high velocity and very low propagation losses, together with a moderate piezoelectric coupling strength, makes it suitable for use at higher frequencies than are feasible with quartz or LiNbO3.
ISSN:0003-6951
DOI:10.1063/1.1654146
出版商:AIP
年代:1972
数据来源: AIP
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5. |
Acoustic‐Surface‐Wave Isolator |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 276-278
M. F. Lewis,
E. Patterson,
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摘要:
A 200‐MHz acoustic‐surface‐wave isolator has been constructed employing an epitaxial layer of Ga‐doped YIG on a gadolinium gallium garnet substrate.
ISSN:0003-6951
DOI:10.1063/1.1654147
出版商:AIP
年代:1972
数据来源: AIP
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6. |
Variation of N2‐Broadened Collisional Width with Rotational Quantum Number for the 10.4‐&mgr;m CO2Band |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 278-279
Charles Young,
R. W. Bell,
R. E. Chapman,
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摘要:
Collisional widths for the individual rotational lines of thePbranch of the 10.4‐&mgr;m CO2band have been measured using a CO2laser as the ir energy source. Both self‐broadening and N2broadening have been studied. An anomalously large N2‐broadened width in the vicinity ofJ= 34 has been observed with an indication of a similar effect for the self‐broadened width.
ISSN:0003-6951
DOI:10.1063/1.1654148
出版商:AIP
年代:1972
数据来源: AIP
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7. |
p‐nJunction Photodiodes in PbTe Prepared by Sb+Ion Implantation |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 279-281
J. P. Donnelly,
T. C. Harman,
A. G. Foyt,
W. T. Lindley,
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摘要:
n‐pjunction photovoltaic detectors in PbTe have been fabricated using Sb+ion implantation to create then‐type layer. At 77 °K, 15‐mil square diodes have had zero‐bias resistances as high as 15 M&OHgr; for a resistance‐area product of 2.1×104&OHgr;cm2. Peak detectivities at 4.4 &mgr;m in reduced background as high as 1.6×1012cmHz1/2/W were observed. Diode quantum efficiencies were typically 40% at 4.4 &mgr;m.
ISSN:0003-6951
DOI:10.1063/1.1654149
出版商:AIP
年代:1972
数据来源: AIP
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8. |
Efficient Second Harmonic Generation of Picosecond Laser Pulses |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 282-284
T. A. Rabson,
H. J. Ruiz,
P. L. Shah,
F. K. Tittel,
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摘要:
Efficient conversion to the second harmonic (SH) using KD2PO4and CsH2AsO4crystals inside a folded cavity of a high‐power‐dye mode‐locked Nd3+: glass laser is reported. For the first time, frequency‐doubled picosecond light pulses have been obtained in CsH2AsO4with peak powers of the order of 109W/cm2at 0.531 &mgr; for an effective pump power density of 4×109W/cm2.
ISSN:0003-6951
DOI:10.1063/1.1654150
出版商:AIP
年代:1972
数据来源: AIP
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9. |
Broadband Efficient Excitation of the Thin‐Ribbon Waveguide for Surface Acoustic Waves |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 284-286
K. H. Yen,
R. C. M. Li,
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摘要:
A practical method for broadband efficient excitation of the thin‐ribbon waveguide for surface acoustic waves is presented. Other major advantages of the excitation system are the simplicity of both its theoretical design and its practical implementation. Experimentally, a maximum excitation efficiency (power) of 65% has been obtained at an operating frequency of 5.5 MHz. In addition, the measured efficiency was in excess of 55% over the frequency range from 4.7 to 6.4 MHz.
ISSN:0003-6951
DOI:10.1063/1.1654151
出版商:AIP
年代:1972
数据来源: AIP
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10. |
Improved IRQC Performance of CdF2:Er3+by Generation ofC3&ngr;Local‐Site Symmetry |
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Applied Physics Letters,
Volume 20,
Issue 8,
1972,
Page 286-288
N. E. Byer,
T. C. Ensign,
W. M. Mularie,
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摘要:
Selective generation of trigonal (C3&ngr;) symmetry at Er3+ions in CdF2by oxygen firing increases the green (4S3/2→4I15/2) radiative efficiency from 1.9 to 52% while causing qualitative changes in the optical absorption and emission associated with these ions. Measurements of the parameters involved in the operation of an infrared quantum counter suggest that this oxygen‐fired material could be used to construct an uncooled infrared detector having a minimum detectable power of 3.6×10−14W at 1.53 &mgr;m, appreciably better than currently available detectors sensitive at this wavelength.
ISSN:0003-6951
DOI:10.1063/1.1654152
出版商:AIP
年代:1972
数据来源: AIP
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