摘要:

The interfacial reactions of zinc sulphide (ZnS) on an anodic oxide film of mercury cadmium telluride (HgCdTe) have been studied by polar angle dependent x‐ray photoelectron spectroscopy (XPS). It was found that the sputter deposition of ZnS reduced the oxidized tellurium of the anodic film at the interface. In addition, the XPS results show a high Zn/S ratio when the deposition is confined to a few monolayers. The ratio, however, decreases to unity for a thick film. The results indicate that zinc atoms sputtered from the ZnS target play an important role in the interfacial reactions between the deposited overlayer and the HgCdTe anodic oxide film.

ISSN:0003-6951    

DOI:10.1063/1.102381

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

A novel tunable semiconductor waveguide reflection filter is proposed and analyzed. The filter is based on spatially selective gain pumping of a chirped‐corrugation waveguide. This active chirped‐corrugation waveguide filter (ACF) is considered for monolithic broadband tuning of semiconductor lasers.

ISSN:0003-6951    

DOI:10.1063/1.101911

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

The detection of subtenth micron paticles in processing fluids is a critical and growing need in the semiconductor industry. In this letter, we show that a small dielectric particle in a focused monochromatic light beam produces a scattered wave (Rayleigh scattering) in phase quadrature with the far‐field incident beam, therefore causing a phase shift in this beam. Thus, the forward scattered field due to the particle may be detected using a bright field interferometer. This allows detection which is near Shott noise limited even for very small particles, and measures the sign of the scattered field as well, such that particles may be distinguished from bubbles. We describe an appropriate interferometer design based on Nomarski optics, which we have used to verify our calculation, measuring scattering in water from single polystyrene spheres as small as 0.038 &mgr;m in diameter.

ISSN:0003-6951    

DOI:10.1063/1.102268

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

The 842‐nm diffraction‐limited emission from an injection‐locked laser diode array was frequency doubled using a monolithic spherical‐mirror KNbO3crystal cavity. Maximum unidirectional external 421 nm power of 24 mW was generated with 167 mW of pump power. Maximum total internal second‐harmonic power and conversion efficiency of 64 mW and 45% were obtained. Effects of heating in the crystal are described.

ISSN:0003-6951    

DOI:10.1063/1.101912

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Room‐temperature continuous wave (cw) operation of a GaAs vertical microcavity surface‐emitting laser has been achieved. An ultrashort cavity device with a cavity length of ∼5.5 &mgr;m was grown by metalorganic chemical vapor deposition. cw lasing characteristics such as mode properties and temperature characteristics were examined. Single longitudinal mode operation with a side mode suppression ratio of 35 dB was obtained. The temperature range for single mode operation was more than 50 K.

ISSN:0003-6951    

DOI:10.1063/1.101913

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

We propose a 1‐cm‐long cylinder‐type target as the gain medium of a recombination‐pumped extreme‐ultraviolet (XUV) laser. The gain medium plasma was pumped by a long‐pulse CO2laser (400 J energy in 50 ns pulse duration). At the C VI 3d–2ptransition (18.2 nm) we obtained the gain‐length product up to 2.4, which was estimated from the line intensity ratio of the axial to transverse directions. The electron temperature of 54 eV and density of 1.2×1019cm−3near the cylinder wall measured using soft‐x‐ray spectroscopy satisfied the condition for the generation of the population inversion betweenn=3 and 2 levels of the C VI ions.

ISSN:0003-6951    

DOI:10.1063/1.101914

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Tungsten layers have been evaporated with an electron gun under ultrahigh vacuum conditions on atomically clean Si(100) substrates. The metallic films deposited on substrates at room temperature are mostly in the body‐centered‐cubic &agr; phase of tungsten. Upon annealing at 400 °C, the bulk of the layer stays unreacted but we have observed the appearance of cracks in the metallic film and the segregation of silicon atoms at the surface. These atoms are not in the form of crystalline WSi2.

ISSN:0003-6951    

DOI:10.1063/1.102382

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

The planar defects which are commonly observed in deposited Co‐Cr and Co‐Ni‐Cr magnetic thin films have been characterized by electron microdiffraction and trace analysis. It was unambiguously shown that these planar defects are (0001) stacking faults, which are thought to be formed to reduce the growth stress of the film during deposition.

ISSN:0003-6951    

DOI:10.1063/1.101915

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Synthetic type 1Byellow diamonds containing nitrogen in single substitutional form, with extremely low birefringence, were used as anvils in a diamond anvil cell. The diamonds were well characterized by infrared and visible absorption spectra. Sensitive spectroscopic methods along with mechanical chopping techniques were used to record ruby fluorescence to 250–300 GPa, a pressure equal to or exceeding that attained with natural diamonds. Nitrogen platelets arenotessential to attaining multimegabar pressures.

ISSN:0003-6951    

DOI:10.1063/1.101916

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Residual strains in (001) and (111) thick layers of CdTe and ZnTe grown by molecular beam epitaxy on nominal or slightly tilted (001) GaAs have been investigated by reflectance, photoluminescence, and optical pumping experiments at low temperature. Strains are found to be independent of both layer orientations and thicknesses in the range 2–6 &mgr;m. They are compressive ≊−0.5×10−3in CdTe and tensile ≊10−3in ZnTe. Estimates of thermal expansion effects show that they are the dominant cause of residual strains in these heterostructures.

ISSN:0003-6951    

DOI:10.1063/1.101917

出版商:AIP    

年代:1989

数据来源: AIP