1. |
InP epitaxial thin‐film formation by planar reactive deposition |
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Applied Physics Letters,
Volume 28,
Issue 8,
1976,
Page 415-417
L. M. Fraas,
K. Zanio,
M. Shibata,
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摘要:
Complete InP epitaxy on GaAs and twinned InP epitaxy on CdS were achieved below 390 °C by planar reactive deposition (PRD). In this technique, indium metal is evaporated from a planar source with an integral cavity into which PH3gas is introduced and decomposed. The decomposition reaction products, P2and H2, are emitted from within the source cavity through a perforated top plate and the combined In, P2, and H2vapor stream on arrival at the substrate forms InP films. High‐energy electron diffraction and SEM measurements show the crystallographic quality of the resultant films to be limited by the substrate quality.
ISSN:0003-6951
DOI:10.1063/1.88802
出版商:AIP
年代:1976
数据来源: AIP
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2. |
Effect of light illumination on CdS‐LiNbO3convolver and relation to the photoconductivity spectrum |
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Applied Physics Letters,
Volume 28,
Issue 8,
1976,
Page 418-419
Z. Ueda,
J. Shirafuji,
Y. Inuishi,
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摘要:
The effect of light illumination on CdS‐LiNbO3convolvers at 77 K and room temperature is investigated. The spectral response of the convolution output is closely connected with the photoconductivity spectrum, and at 77 K three exciton lines are clearly observed in the spectrum of the convolution output. Whether the convolution output is enhanced or quenched under illumination depends on the magnitude of the surface barrier of the semiconductor. The results are qualitatively explained on the basis of the increase in carrier density near the semiconductor surface by the light illumination.
ISSN:0003-6951
DOI:10.1063/1.88803
出版商:AIP
年代:1976
数据来源: AIP
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3. |
Surface acoustic wave reflective dot array (RDA) |
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Applied Physics Letters,
Volume 28,
Issue 8,
1976,
Page 420-422
Leland P. Solie,
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摘要:
A new type of reflective array device is described in which the array of reflecting grooves is replaced by an array of reflecting metallic dots. This reflective dot array or RDA has the principal advantage of being part of the same mask and metalization as the transducers allowing single‐step fabrication. A bandpass filter operating at 213 MHz with a bandwidth of 6 MHz, which was fabricated using this technique, has a passband‐to‐sidelobe ratio of nearly 60 dB.
ISSN:0003-6951
DOI:10.1063/1.88804
出版商:AIP
年代:1976
数据来源: AIP
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4. |
Characteristics of a water absorber in front of a silicon solar cell |
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Applied Physics Letters,
Volume 28,
Issue 8,
1976,
Page 422-423
Terry I. Chappell,
Richard M. White,
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摘要:
In a system for converting sunlight to both electric power and heat, a selective absorber between the sun and a semiconductor solar cell may provide a substantial thermal output without seriously reducing the electrical output. Calculations for water in front of a typical silicon solar cell show, for example, that a water layer 1 cm thick absorbs 16.3% of the incident energy (chiefly photons having energies below the energy gap of silicon) while reducing the electric power output only slightly, from 13.8 to 13.1%. Experimental results confirm this finding.
ISSN:0003-6951
DOI:10.1063/1.88805
出版商:AIP
年代:1976
数据来源: AIP
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5. |
Foil scattering in a reflex triode intense ion beam accelerator |
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Applied Physics Letters,
Volume 28,
Issue 8,
1976,
Page 424-426
Thomas M. Antonsen,
Edward Ott,
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摘要:
The electron and ion current densities flowing in a reflex triode are calculated. Our analysis self‐consistently determines the electron distribution function resulting from electron collisions with a foil anode and the potential in the triode. The electron and ion currents diverge for a sufficiently thin anode.
ISSN:0003-6951
DOI:10.1063/1.88806
出版商:AIP
年代:1976
数据来源: AIP
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6. |
Parametric study of the current induced in a CO2laser plasma |
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Applied Physics Letters,
Volume 28,
Issue 8,
1976,
Page 426-428
M. G. Drouet,
H. Pe´pin,
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摘要:
The current generated during the interaction of a focused 10.6‐&mgr;m CO2nanosecond laser pulse with a copper target was measured as a function of laser power—up to 2.5 GW—and of the background nitrogen pressure from 10−5to 103Torr. Current distribution at the target was measured. The results show a resonance effect at 10−2Torr with a total current flow of 250 kA.
ISSN:0003-6951
DOI:10.1063/1.88808
出版商:AIP
年代:1976
数据来源: AIP
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7. |
Scattering of electromagnetic waves from a rough surface |
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Applied Physics Letters,
Volume 28,
Issue 8,
1976,
Page 429-431
C. C. Sung,
J. A. Holzer,
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摘要:
The average irradiance of reflected electromagnetic waves from a Gaussian rough surface is calculated exactly without the conventional small‐slope or stationary‐phase approximation. Numerical results for the one‐dimensional problem are presented and compared with previous calculations.
ISSN:0003-6951
DOI:10.1063/1.88809
出版商:AIP
年代:1976
数据来源: AIP
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8. |
Vacancies and vacancy clusters in shock‐loaded molybdenum: Direct observations by transmission electron and field‐ion microscopy |
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Applied Physics Letters,
Volume 28,
Issue 8,
1976,
Page 432-434
L. E. Murr,
O. T. Inal,
A. A. Morales,
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摘要:
A novel experimental sandwich arrangement of molybdenum thin sheets and wires was shock‐loaded at a pressure of 150 kbar (for 2 &mgr;sec), and thin foils and emission end forms prepared from these samples were simultaneously examined by transmission electron and field‐ion microscopy, respectively. Dislocation loop densitis were observed to be 5×109cm−3in the annealed foil samples as compared with 4×1014cm−3in the shock‐loaded foil samples, and 75% of the loop types analyzed were vacancy. The direct measurement of vacancy density in the field‐ion microscope revealed twice as many vacancies (including aggregates) in the shock‐loaded wires as compared with the annealed unshocked wires.
ISSN:0003-6951
DOI:10.1063/1.88810
出版商:AIP
年代:1976
数据来源: AIP
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9. |
Nd‐glass thin‐film waveguide: An active medium for Nd thin‐film laser |
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Applied Physics Letters,
Volume 28,
Issue 8,
1976,
Page 435-437
Bor‐Uei Chen,
C. L. Tang,
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摘要:
We report the optical properties, fluorescence lifetime, and method of fabrication of very low‐loss and high‐optical‐quality Nd‐glass thin films. Substantial optical gain due to stimulated emission in such thin films is obtained.
ISSN:0003-6951
DOI:10.1063/1.88811
出版商:AIP
年代:1976
数据来源: AIP
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10. |
Optical second harmonic generation in periodic multilayer GaAs‐Al0.3Ga0.7As structures |
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Applied Physics Letters,
Volume 28,
Issue 8,
1976,
Page 437-439
J. P. van der Ziel,
M. Ilegems,
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摘要:
Using a tunable laser operating near 2 &mgr;m we have observed second harmonic generation in a GaAs‐Al0.3Ga0.7As multilayer. Phase matching of the backward‐traveling harmonic wave is observed and corresponds tok2=2(k1−&kgr;) <0 wherek1<&kgr;/2 and &kgr; is the wave vector of the periodic structure.
ISSN:0003-6951
DOI:10.1063/1.88789
出版商:AIP
年代:1976
数据来源: AIP
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