摘要:

The usefulness of a material for nonlinear acoustic applications may be deduced from an anharmonic figure of merit. It is shown in this letter that materials well suited for acousto‐optic applications are also acoustically highly nonlinear.

ISSN:0003-6951    

DOI:10.1063/1.1655405

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

We show that surface acoustic waves on GaAs can be used to read the amount of charge stored on an isolated Schottky barrier. This charge can be controlled by the light intensity which illuminates a given electrode and our technique allows one to monitor this light intensity. We propose that the effect can be used in a panel array suitable for imaging.

ISSN:0003-6951    

DOI:10.1063/1.1655406

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Germanium films, which were obliquely deposited in relatively high pressures of oxygen, were studied with TEM and ESCA. TEM photomicrographs of the films show that large elongated clusters appear as the pressure of oxygen during film deposition increases. The number of these clusters increases as the deposition angle (the angle between the source flux and the substrate plane) decreases. ESCA results indicate that the films consist primarily of Ge and HCl‐soluble GeO2. The amount of oxygen uptake in the films increases as the pressure of oxygen during deposition increases and/or as the deposition angle decreases. These results are important to the understanding of the anomalous photovoltaic effect.

ISSN:0003-6951    

DOI:10.1063/1.1655395

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

An experimental technique is described for determination of the generation carrier lifetime as a function of the distance of the insulator‐semiconductor interface. This method is applied to thin films of silicon on sapphire nominally 1 &mgr; thick and dopedntype.

ISSN:0003-6951    

DOI:10.1063/1.1655396

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Expressions for the coupling coefficients characterizing Bragg x‐ray scattering in single crystals are derived. These are used to obtain the threshold gain of a new type of x‐ray distributed‐feedback laser.

ISSN:0003-6951    

DOI:10.1063/1.1655397

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The x‐ray bremsstrahlung from 4 to 50 keV emitted by laser‐produced plasmas has been measured using a Bragg crystal spectrometer. Direct spectral information was obtained in contrast to earlier filter spectroscopy. Measurements were made with focal spot powers of 1016W/cm2of 1.06‐&mgr;m radiation and 1014W/cm2of 10.6‐&mgr;m radiation. A definite suprathermal electron component was observed.

ISSN:0003-6951    

DOI:10.1063/1.1655398

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The 10.6‐&mgr;m absorption in most KCl is shown to be dominated by a broad absorption band near 9.7 &mgr;m. The integrated absorption of this band decreases with increasing temperature. The temperature dependence is consistent with that to be expected from the dissociation of an absorbing pair. A KCl crystal has been measured whose 10.6‐&mgr;m absorption, 6.6±2×10−5cm−1, is at the intrinsic multiphonon level.

ISSN:0003-6951    

DOI:10.1063/1.1655399

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

We have carried out saturation spectroscopy of the H2O line at 1889.58 cm−1using a tunable spin‐flip Raman (SFR) laser. We have observed Lamb dip widths of the order of 200 kHz, demonstrating the usefulness of the tunable SFR laser for ultrahigh‐resolution spectroscopy (resolution ∼ 3 × 108).

ISSN:0003-6951    

DOI:10.1063/1.1655400

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The first determination of the complete base profile shape in a pushed‐out diffused transistor is reported. The effect of phosphorus emitter diffusion on a previously diffused gallium base has been monitored by radiotracer profiling using the isotope Ga67, and the phosphorus profile has been simultaneously measured by resistivity profiling. Definitive evidence is presented that the push‐out effect is caused wholly by a real inward migration of base impurity atmos at a rate which is much enhanced over the normal migration rate. The profile shape of gallium after push‐out shows a marked dip in concentrationwithinthe diffused emitter.

ISSN:0003-6951    

DOI:10.1063/1.1655401

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Optical confinement has been observed in low‐loss (<5 dB/cm) GaAs channel waveguides which are the optical analog of a microwave stripline.

ISSN:0003-6951    

DOI:10.1063/1.1655402

出版商:AIP    

年代:1974

数据来源: AIP