摘要:

Distributed feedback AlGaAs/GaAs lasers with first‐order grating (1295 A˚) were fabricated and successfully operated under continuous wave conditions at room temperature. A coupling coefficient of 115 cm−1and a threshold current of 47 mA were obtained. A stable single‐mode oscillation was maintained up to 100 °C.

ISSN:0003-6951    

DOI:10.1063/1.98597

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

A high‐sensitivity interferometric laser probe has been developed to detect thermally generated surface displacements. Shot‐noise‐limited detection has been achieved with the use of inexpensive semiconductor lasers.

ISSN:0003-6951    

DOI:10.1063/1.98598

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

GaAlAs buried heterostructure lasers with submilliampere threshold current fabricated from single quantum well wafers can be driven directly with logic level signalswithoutany current bias. The switch‐on delay was measured to be <50 ps and no relaxation oscillation ringing was observed. These lasers permit fullyon‐offmultigigabit digital switching while at the same time obviating the need for bias monitoring and feedback control.

ISSN:0003-6951    

DOI:10.1063/1.98599

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

The rapid degradation observed in InP/InGaAsP mushroom stripe lasers covered with phosphosilicate glass (PSG) was investigated by comparing the light‐current characteristics as a function of the preparation technique. We were able to show that the PSG‐covering layer is not the reason for the rapid degradation. By inspecting the light‐current characteristics before and after degradation and by additional underetching the laser structure after degradation we were able to localize the degraded regions on the open side walls of the InGaAsP active layer.

ISSN:0003-6951    

DOI:10.1063/1.98600

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

A new method for steering light beams with automatic (self‐aligning) Bragg matching is presented. This device enables, in principle, a large beam deflection range which is not limited by the Bragg condition. It is based on a double color pumped photorefractive oscillator. Two input beams of different colors induce and pump a dynamic four‐wave mixing process in a photorefractive BaTiO3crystal in which two other beams and a common grating are self‐generated. Steering is achieved by wavelength tuning of one of the pump beams. A deflection range of about 1.7°, with an efficiency ranging from 50 to 90%, is measured for a wavelength difference &Dgr;&lgr; of ±30 nm for the two pumps (using argon ion laser lines). A deflection of 4.7° with an efficiency of 10% is seen for &Dgr;&lgr;=144.8 nm (corresponding to pumps at 488 and 632.8 nm).

ISSN:0003-6951    

DOI:10.1063/1.98601

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

90% photon conversion of 18 MW (1 J, 55 ns) power XeCl laser radiation to Raman Stokes beams is reported with 39% photon efficiency and ∼60% peak power conversion efficiency to the third Stokes orderS3(499 nm). Relaxation oscillations of higher orderSi(i≥3) pulses have been observed.

ISSN:0003-6951    

DOI:10.1063/1.98602

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We have demonstrated a relaxation oscillation frequency (fr) of up to 30 GHz in highlyp‐doped (Be=1×1019cm−3) GaAs/GaAlAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. This is the highestfrachieved at room temperature for III‐V semiconductor lasers. The highfris attained by the large differential gain in thep‐doped MQW structure having a low threshold electron density resulted from the excess hole density in addition to the quantum size effect.

ISSN:0003-6951    

DOI:10.1063/1.98603

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Holographic interferometry using crystals of iron‐doped lithium niobate is reported. The interferograms presented are produced via double‐exposure Fourier transform holography in heavily doped crystals without applied electric fields. Flow‐field visualization is used as an example application area.

ISSN:0003-6951    

DOI:10.1063/1.98604

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We report a 1.3‐&mgr;m GaAs traveling‐wave electro‐optic waveguide modulator with a 3‐dB optical bandwidth in excess of 20 GHz. The bandwidth was determined by directly detecting the modulated optical signal with a high‐speed InP/GaInAs photodiode. The modulator has a coplanar strip electrode configuration with a double heterojunction Al0.032Ga0.968As/GaAs/Al0.032Ga0.968As optical guide grown by low‐pressure organometallic vapor phase epitaxy.

ISSN:0003-6951    

DOI:10.1063/1.98982

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Near‐band‐gap optical nonlinearity in In0.53Ga0.47As/InP multiple quantum well (MQW) structures is studied by a combination of nonlinear absorption, pump‐and‐probe, and forward degenerate four‐wave mixing experiments. Near complete saturation of then=1 heavy‐hole exciton is observed for the first time in In0.53Ga0.47As/InP MQW structures. Nonlinear susceptibility &khgr;(3)is found to be 0.08 esu, which is about the same as that for GaAs/GaAlAs MQW structures. Saturation intensity is 200 W/cm2.

ISSN:0003-6951    

DOI:10.1063/1.98605

出版商:AIP    

年代:1987

数据来源: AIP