摘要:

We present experimental observations of the variations of the input‐output characteristic of a nonlinear Fabry–Perot resonator as a function of initial detuning. The characteristics include regions with various differential gains, or show hysteresis with the width of the bistable region being variable. Operating the device as a transphasor (optical transistor), a signal of 3 &mgr;W can be amplified with a signal power gain of up to 104with the device operating at 77 K and 1819 cm−1.

ISSN:0003-6951    

DOI:10.1063/1.94515

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The ridged substrate internally diffused stripe (RIDS) laser, a new gain‐guided AlGaAs diode laser structure emitting light in the short wavelength region, is described. The five‐layer structure, including an intermediaten‐type Ga1−xAlxAs current blocking layer, is grown by one‐step liquid phase epitaxy on ap‐type substrate with a mesa etched in the stripe direction. Above the mesa a narrow current injection path is created by local conversion of the blocking layer due to outdiffusion ofp‐type dopants from the neighboringp‐type cladding layer and substrate. Lasers emitting at 770 nm have thus been obtained with cw room‐temperature threshold currents of 70 mA and operating stably in the fundamental transverse mode up to pulsed output powers of 100 mW.

ISSN:0003-6951    

DOI:10.1063/1.94516

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

When some of the input waves involved in nonlinear frequency conversion are amplified internally, the phase mismatch is shown to reduce the conversion efficiency significantly even when Maker fringes are washed out.

ISSN:0003-6951    

DOI:10.1063/1.94517

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Two nonlinear optical processes in superlattices are studied. The first involves free‐carrier absorption and the second involves direct intersubband absorption. The optical field modulates the energy‐dependent effective mass or the distribution of electrons among the subbands, giving rise to nonlinear refraction. These processes have picosecond relaxation times and nonlinearities up to four orders of magnitude larger than the nonlinear refractive effects in bulk crystals with comparable relaxation times.

ISSN:0003-6951    

DOI:10.1063/1.94518

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Interferometric effect of coupled‐waveguide semiconductor laser consisting of two active and passive waveguides is investigated theoretically and experimentally. The structural optimization is made to select and control the longitudinal mode. The test GaAlAs laser shows a single longitudinal operation and good temperature stability of lasing wavelength due to the optimized interferometric effect predicted by the theory.

ISSN:0003-6951    

DOI:10.1063/1.94519

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Spontaneous emission and lasing gain profiles of semiconductor injection lasers which have Zn‐doped GaAs active regions were experimentally determined, and the tailing phenomenon into the band gap of these profiles was theoretically explained as a result of relaxation time broadening due to scattering of electrons and holes. Especially, the tail of the gain profile was found to show a concave shape, which was better explained by the relaxation time broadening model than by the band tail state model.

ISSN:0003-6951    

DOI:10.1063/1.94520

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A monolithic optical receiver chip consisting of apinphotodiode and a transimpedance preamplifier on a GaAs semi‐insulating substrate is reported. The epitaxial layers for the photodiode are grown by hydride vapor phase epitaxy and the circuit elements are fabricated by selective ion implantation in the semi‐insulating substrate. The integration scheme results in a planar surface which simplifies the processing of optoelectronic integrated chips.

ISSN:0003-6951    

DOI:10.1063/1.94507

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Operation of a transverse‐discharge‐excited Ca+recombination laser at high He buffer gas pressures (1200 Torr) and high discharge current densities (103A/cm2) is reported. Single laser pulse energies at &lgr;373.7 nm exceeding 0.7 mJ have been obtained corresponding to specific energy densities over 35 &mgr;J/cm3. There appear to be no fundamental limitations to attainment of pulse repetition rates in the megahertz range.

ISSN:0003-6951    

DOI:10.1063/1.94508

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Acoustic signals generated byQ‐switch laser irradiation of amorphous Si have been investigated as a function of incident laser fluence. Marked discontinuities in the signal at the recrystallization threshold and at the damage threshold are found. The results indicate that the first effect is due to melting and the second is due to evaporation.

ISSN:0003-6951    

DOI:10.1063/1.94509

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

It is known that the epitaxial quality of alkaline‐earth fluorides on semiconductors is not simply related to the degree of lattice mismatch. The interfacial structure in two such systems has been examined by high‐resolution electron microscopy. For the high‐mismatch system (9%), BaF2on (111) Ge, an ‘‘incommensurate’’ interface is observed. In contrast, the lower mismatch BaF2on (100) InP system (5%), displays a locally ‘‘commensurate’’ interface with closely spaced misfit dislocations. These observations demonstrate that epitaxy can occur with or without strong bonding across the substrate overlayer interface, depending on the lattice mismatch. The discovery of a truly incommensurate, epitaxial interface [in the BaF2on (111) Ge system] is furthermore quite unique.

ISSN:0003-6951    

DOI:10.1063/1.94510

出版商:AIP    

年代:1983

数据来源: AIP