摘要:

The intensity of the electroluminescence (EL) of ZnS:TbF3changed after gas adsorption. The threshold voltage of EL after gas adsorption is correlated to the specific dielectric constant of adsorbates.

ISSN:0003-6951    

DOI:10.1063/1.98932

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

The organic metal &agr;‐[bis(ethylenedithio) tetrathiofulvalene]2I3shows a large third‐order optical nonlinearity around 650 nm, as observed by forward degenerate four‐wave mixing. Nonlinear susceptibilities of ‖&khgr;(3)‖ ∼5×10−8esu are observed along the direction of maximum conductivity. The frequency dispersion of the nonlinearity points to a plasma effect due to the conduction electrons.

ISSN:0003-6951    

DOI:10.1063/1.98933

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

A promethium (Pm3+) laser has been demonstrated for the first time. Trivalent promethium 147 doped into a lead‐indium‐phosphate glass e´talon was used to produce room‐temperature four‐level laser emission at wavelengths of 933 and 1098 nm. Spectroscopic and kinetic measurements have shown that Pm3+is similar to Nd3+as a laser active ion.

ISSN:0003-6951    

DOI:10.1063/1.98934

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We describe a one‐step two‐level etching technique for the batch fabrication of monolithically integrated optical circuits. The ability to fabricate high‐quality laser devices with this process is demonstrated.

ISSN:0003-6951    

DOI:10.1063/1.98935

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

The wavelength, angle, and temperature tolerances of a new room‐temperature noncritically phase‐matched frequency mixing process involving type II frequency mixing of 1064 and 809 nm radiation in potassium titanyl phosphate (KTiOPO4) are measured. The angular and temperature bandwidths are found to be unusually wide. Device applications for upconversion of diode pumped neodymium:yttrium aluminum garnet laser sources to the blue spectral region are explored.

ISSN:0003-6951    

DOI:10.1063/1.98936

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We demonstrate for the first time the production of more than 108neutrons per shot from a carbon‐deuterium plasma confined in a 100‐&mgr;m‐thick gold shell without an implosion using six beams from a GEKKO XII glass laser system at a laser wavelength of 1.06 &mgr;m. The equivalent neutron of the deuterium‐tritium reaction is estimated to be 1010–1011.

ISSN:0003-6951    

DOI:10.1063/1.98937

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Czochralski silicon samples have been heated for increasing periods of time at temperatures of 395, 415, 450, 475, and 490 °C. At each stage infrared spectra of the electronic absorption of thermal donors TD2–TD9 were obtained with the samples at 4.2 K. The data for all the thermal donor centers can be presented on one universal plot, provided the concentration and time axes are simply scaled by factors that depend only on the temperature of heating. It is implied that the rate of formation of each center is limited by the same mechanism. An activation energy of 1.7±0.1 eV is determined for these processes.

ISSN:0003-6951    

DOI:10.1063/1.98938

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We report measurements of the solid‐solid thermal boundary resistanceRbd, spanning the temperature range from 1 to 300 K. Below 30 K,Rbdis found to be in agreement with the prediction of the acoustic mismatch model. The influence of diffuse scattering at the interface is found to have a very minor influence onRbd. Above 30 K,Rbddecreases less rapidly with increasing temperature than predicted by the theory. Phonon scattering in thin (∼30 A˚) disordered layers near the interface is shown to be a possible explanation. Implications for heat removal from integrated circuits are discussed.

ISSN:0003-6951    

DOI:10.1063/1.98939

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Successful demonstration of a new etching technique, aerosol jet etching (AJE), is reported. AJE has been used to pattern fine lines with good anisotropy in silicon dioxide surfaces on silicon substrates using a hydrofluoric acid ultrafine aerosol jet.

ISSN:0003-6951    

DOI:10.1063/1.98940

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation‐induced defects remarkably, especially of theAcenter, and lowers the annealing temperature to 220–140 °C for theAandEcenters, respectively. The levelEa(0.23) in the Pt‐doped silicon is the Pt(−/0) level, an acceptor like theAcenter.

ISSN:0003-6951    

DOI:10.1063/1.98941

出版商:AIP    

年代:1987

数据来源: AIP