1. |
Continuous broadband tuning of an electron‐beam‐pumped XeF (C→A) laser |
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Applied Physics Letters,
Volume 39,
Issue 5,
1981,
Page 369-371
J. Liegel,
F. K. Tittel,
W. L. Wilson,
G. Marowsky,
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摘要:
Wide‐band tuning of a XeF (C→A) excimer laser pumped with a longitudinal electron beam was demonstrated from 455 to 529 nm. The spectral linewidth of the laser emission was ∼5 nm when a prism was used as a wavelength selecting element, and narrowed to ∼1 nm when the prism was replaced by a diffraction grating.
ISSN:0003-6951
DOI:10.1063/1.92740
出版商:AIP
年代:1981
数据来源: AIP
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2. |
ZnI (B→X) laser: 600–604 nm |
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Applied Physics Letters,
Volume 39,
Issue 5,
1981,
Page 371-373
A. W. McCown,
J. G. Eden,
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摘要:
Lasing on several transitions of theB2J→X2Jband of zinc‐iodide (ZnI) with wavelengths ranging from 600 to 604 nm has been demonstrated. Pumped by the dissociative excitation of ZnI2(using an ArF excimer laser), this laser exhibits many of the optical and chemical properties of the HgBr2blue‐green dissociation laser.
ISSN:0003-6951
DOI:10.1063/1.92741
出版商:AIP
年代:1981
数据来源: AIP
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3. |
Direct measurement of anomalous dispersion by beam steering and a wavefront sensor |
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Applied Physics Letters,
Volume 39,
Issue 5,
1981,
Page 374-376
C. P. Wang,
R. L. Varwig,
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摘要:
A direct measurement of laser beam steering resulting from anomalous dispersion in an absorbing medium was achieved with the use of a sensitive wavefront sensor. The experimental setup, which includes a Brewster’s angle absorption cell, a continuous‐wave, frequency‐scannable hydrogen flouride (HF) chemical laser, an acousto‐optical modulator and phase demodulator, and servo‐ and detection‐ electronics, is described. The experimental results provided a direct measure of the anomalous dispersion for HF [P1(6) line] that agrees within about 10% with the value deduced from an absorption measurement.
ISSN:0003-6951
DOI:10.1063/1.92742
出版商:AIP
年代:1981
数据来源: AIP
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4. |
Pulsating output of separate confinement buried optical guide lasers due to the deliberate introduction of saturable loss |
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Applied Physics Letters,
Volume 39,
Issue 5,
1981,
Page 376-378
J. P. van der Ziel,
W. T. Tsang,
R. A. Logan,
W. M. Augustyniak,
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摘要:
Proton bombardment at 3×1015–1016‐cm−2dosage level and 300 keV has been used to introduce a ∼4‐&mgr;m‐long nonradiative region at one of the mirror facets. The region acts as a saturable absorber and converts the initially temporally stable optical emission to a pulsating behavior with a repetition rate in the 0.5–3‐GHz range.
ISSN:0003-6951
DOI:10.1063/1.92743
出版商:AIP
年代:1981
数据来源: AIP
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5. |
Self‐sustained intensity oscillation of a laser diode introduced by a delayed electrical feedback using an optical fiber and an electrical amplifier |
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Applied Physics Letters,
Volume 39,
Issue 5,
1981,
Page 379-381
Masataka Nakazawa,
Masamitsu Tokuda,
Naoya Uchida,
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摘要:
A self‐sustained oscillation of laser light intensity emitted by a laser diode was newly observed by a delayed network using an optical fiber and an electrical feedback system. The time delay (transit time) of the light beam through the optical fiber plus the time delay of the electrical signal in the electrical feedback system determines the oscillation frequency of the light intensity. The oscillation for the fiber length of 7 km was obtained by using an electrical amplifier with large gain. With a wide‐band amplifier, harmonic (multimode) oscillations took place where the waveform was almost square.
ISSN:0003-6951
DOI:10.1063/1.92744
出版商:AIP
年代:1981
数据来源: AIP
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6. |
Bistability and pulsations in cw semiconductor lasers with a controlled amount of saturable absorption |
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Applied Physics Letters,
Volume 39,
Issue 5,
1981,
Page 382-384
Ch. Harder,
K. Y. Lau,
A. Yariv,
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摘要:
Experimental results of a buried heterostructure cw laser with a controllable amount of saturable absorption introduced by a segmented contact are presented. With no absorption the laser is stable and has a linear output characteristic. Increasing of the saturable absorption by changing the pump current through the control segment causes the light output of the device to pulsate and to show bistable and hysteretical behavior. The introduction of a controllable amount of saturable absorption suggest the usefulness of this device in generating extremely short pulses, for example, by passive mode locking and as a bistable optical device.
ISSN:0003-6951
DOI:10.1063/1.92745
出版商:AIP
年代:1981
数据来源: AIP
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7. |
Optical frequency shifting lever |
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Applied Physics Letters,
Volume 39,
Issue 5,
1981,
Page 384-386
E. P. Chicklis,
L. Esterowitz,
R. C. Eckardt,
R. Allen,
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摘要:
Multiplication of the frequency shift of a tunable solid‐state laser is achieved via resonant pumping in a double‐doped rare‐earth crystal. With a tuning shift of only 0.6 nm of the pump, an output shift of 100 nm is achieved.
ISSN:0003-6951
DOI:10.1063/1.92746
出版商:AIP
年代:1981
数据来源: AIP
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8. |
A method of excitation profiling in high‐field electroluminescence |
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Applied Physics Letters,
Volume 39,
Issue 5,
1981,
Page 386-388
J. M. Langer,
A. Leman´ska‐Bajorek,
A. Suchocki,
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摘要:
A method of quasidirect profiling of impact excitation of electroluminescence in a metal semiconductor junction utilizing the Auger quenching of a localized center luminescence by either free or weakly bound electrons is described. Experimental results obtained on CdF2:Mn,Y Schottky diodes unambiguously prove a spatial separation of the acceleration and collision excitation processes in high‐field electroluminescence.
ISSN:0003-6951
DOI:10.1063/1.92739
出版商:AIP
年代:1981
数据来源: AIP
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9. |
The radiative recombination coefficient of GaAs from laser delay measurements and effective nonradiative carrier lifetimes |
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Applied Physics Letters,
Volume 39,
Issue 5,
1981,
Page 389-390
G. W. ’t Hooft,
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摘要:
The various interpretations of turn‐on delay in semiconductor laser diodes are critically reviewed. It is concluded that values for the total carrier lifetime, or radiative coefficient, cannot be deduced unambiguously from laser turn‐on delay measurements alone. However, using additional luminescence efficiency measurements in the spontaneous regime, both the radiative coefficient as well as the nonradiative lifetime can be calculated. The average value for the radiative coefficient in GaAs obtained in this way is 1.3×10−10cm3/s.
ISSN:0003-6951
DOI:10.1063/1.92747
出版商:AIP
年代:1981
数据来源: AIP
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10. |
Thermal contact probing by photoacoustic effect |
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Applied Physics Letters,
Volume 39,
Issue 5,
1981,
Page 391-393
J.‐P. Monchalin,
J.‐L. Parpal,
L. Bertrand,
J.‐M. Gagne´,
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摘要:
The influence on the photoacoustic signal of the thermal contact resistance at the interface sample substrate is investigated using a thin metallic foil (thickness ∼12.5 &mgr;m) as sample. The foil is either applied by pressure against the substrate or epoxyed on it. The resistance is determined by interpreting magnitude and phase data obtained by varying the laser source modulation frequency. In the light of the results obtained with the thin foil, we discuss the limitations introduced by thermal contact in the photoacoustic detection of aerosols collected on a surface.
ISSN:0003-6951
DOI:10.1063/1.92748
出版商:AIP
年代:1981
数据来源: AIP
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