摘要:

Thermally stimulated ionic conductivity curves have been used to measure Na+motion in rf‐sputtered SiO2films. A hyperbolic heating rate, 1/T=1/T0‐at, has been used to simplify data analysis. The energy for Na+motion depends on bias voltage, on bias polarity, and on atomic defects in Si&sngbnd;SiO2&sngbnd;Al samples. Either Al positive or Al negative can be the direction of easy motion, depending on the nature of defects in the SiO2film.

ISSN:0003-6951    

DOI:10.1063/1.1654633

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Zinc‐doped InGaAsP quaternary III‐V material of the proper composition range shows superior photoemission properties to either InGaAs or InAsP ternary material. The minority‐carrier diffusion length in the quaternary material is at least as long as that in InAsP and much longer than observed in InGaAs. The barrier height at the InGaAsP&sngbnd;Cs2O interface is lowered by cooling, giving increased electron escape probability and new highs in quantum efficiency over a wide wavelength range. For example, a 1.06‐&mgr; quantum efficiency of 7.5&percent;/incident photon was observed at − 90 °C.

ISSN:0003-6951    

DOI:10.1063/1.1654634

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

This letter reports experiments that used a mode‐locked TEA CO2laser to modulate a cw He&sngbnd;Ne laser. This technique uses the optical Kerr effect in CS2. The optical Kerr coefficient,n2, at 10.6 &mgr;m is estimated from our data to be approximately 10−20m2/V2.

ISSN:0003-6951    

DOI:10.1063/1.1654635

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Using a dilute HF solution as the etchant, we found very different etching behaviors between amorphous silicon films prepared by vapor deposition and by ion implantation. The latter are etched preferentially forming circular pits on the surface, but not the former. However, when the evaporated films were subjected to high dosages of ion bombardment and followed by etching, the same kind of circular pits were observed. We conclude that the bombardment of ions can cause weak spots on the amorphous Si surface which possess low resistance to the etching.

ISSN:0003-6951    

DOI:10.1063/1.1654636

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The small signal Raman gain in a single‐mode glass waveguide amplifier has been measured directly. The measured gain is in good agreement with that calculated from the Raman cross section. The cross section was determined by a comparison of the spontaneous Raman scattering of fused quartz and benzene.

ISSN:0003-6951    

DOI:10.1063/1.1654637

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The use of vinyl ferrocene monomer as a contaminating agent for the direct SEM observation of backscatter electron flux from target surfaces is described. The method readily yields a backscatter spatial current distribution as a function of radial distancerfrom the incident probe beam of the formJB(r) = exp(‐br). A geometric backscatter model is suggested as an alternate to that of Archard and is shown to be in good agreement with experiment and Monte Carlo calculations.

ISSN:0003-6951    

DOI:10.1063/1.1654638

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The exothermic chain reactions between deuterium and fluorine have been used to produce laser emission from carbon dioxide in a pulsed transfer laser. Stable mixtures of D2&sngbnd;F2&sngbnd;CO2&sngbnd;He were initiated by a transverse electrical discharge in a system with good chemical and electrical efficiency. Laser pulses at 10.6 &mgr;m from D2&sngbnd;F2&sngbnd;CO2&sngbnd;He mixtures at total pressure up to 250 Torr have been observed with energies up to 0.5 J.

ISSN:0003-6951    

DOI:10.1063/1.1654639

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

The reflection losses of Rayleigh surface waves incident at 90° to a cleaved edge have been measured in semi‐insulating GaAs. The waves were propagating along the ⟨110⟩ direction on (100)‐oriented wafers with (110)‐cleaved surfaces. The reflection losses have been measured at 22, 38, and 72 MHz and were as low as 5 dB.

ISSN:0003-6951    

DOI:10.1063/1.1654640

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

A new kind of charge‐coupled device with buried channels is described. This device is fabricated by forming ion‐implanted buried channels under the gaps between electrodes. Since the device does not depend on the surface potential under the gaps, a reliable and low‐operating‐voltage device with nonoverlapping gate electrodes can be made. Transfer efficiency greater than 99.5&percent; per transfer has been obtained at 500 kHz.

ISSN:0003-6951    

DOI:10.1063/1.1654641

出版商:AIP    

年代:1973

数据来源: AIP

摘要:

Up to 6 W of cw laser power has been extracted from vibrationally excited CO produced in free‐burning CS2/O2/N2O flames burned at pressures of 10–40 Torr. A peak efficiency of approximately one laser photon for every eight fuel molecules has been obtained.

ISSN:0003-6951    

DOI:10.1063/1.1654642

出版商:AIP    

年代:1973

数据来源: AIP