1. |
THIN FILM CHARACTERIZATION BY ELECTRON MICROPROBE AND ELLIPSOMETRY: SiO2FILMS ON SILICON |
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Applied Physics Letters,
Volume 14,
Issue 2,
1969,
Page 43-45
W. H. Knausenberger,
K. Vedam,
E. W. White,
W. Zeigler,
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摘要:
A combined electron microprobe and ellipsometric study of thin SiO2films on silicon provides a technique for compositional and morphological characterization of thin films.
ISSN:0003-6951
DOI:10.1063/1.1652704
出版商:AIP
年代:1969
数据来源: AIP
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2. |
CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT |
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Applied Physics Letters,
Volume 14,
Issue 2,
1969,
Page 45-47
F. A. Sewell,
H. A. R. Wegener,
E. T. Lewis,
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摘要:
A simple two‐layer model is presented for charge storage in a MI2I1S device in which the times for charging and discharging are expressed in closed‐form expressions depending on the conduction properties, the thicknesses, and the dielectric constants of the two layers. Data were taken using silicon oxide for I1and silicon nitride for I2which are in good agreement with the model. The model is quite general and should be valid for other insulators and other conduction mechanisms.
ISSN:0003-6951
DOI:10.1063/1.1652705
出版商:AIP
年代:1969
数据来源: AIP
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3. |
ROTATIONAL RELAXATION RATE OF CO2LASER LEVELS |
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Applied Physics Letters,
Volume 14,
Issue 2,
1969,
Page 47-49
P. K. Cheo,
R. L. Abrams,
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摘要:
The rotational relaxation rate constantkrotof the CO200°1 upper laser level has been determined by observation of the transient change in the cw gain of a 9.6‐&mgr; P(20) laser amplifier induced by passage of a 20‐nsec 10.6‐&mgr; P(20) laser pulse through the amplifier.
ISSN:0003-6951
DOI:10.1063/1.1652706
出版商:AIP
年代:1969
数据来源: AIP
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4. |
INFRARED TRANSMISSION, MAGNETIC BIREFRINGENCE, AND FARADAY ROTATION IN EuO |
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Applied Physics Letters,
Volume 14,
Issue 2,
1969,
Page 49-51
J. O. Dimmock,
C. E. Hurwitz,
T. B. Reed,
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摘要:
Infrared transmission, magnetic birefringence, and Faraday rotation have been measured in single crystals of EuO as a function of temperature and magnetic field in the wavelength region between 1.5 and 20 &mgr;. The most transparent samples have an absorption coefficient at 20°K less than 0.5 cm−1in the range between 2.5 and 9 &mgr; and less than 1.0 cm−1at 10.6 &mgr;. At 20°K and 9 kG the Faraday rotation varies from 660 deg/cm at 10.6 &mgr; to 3 × 104deg/cm at 2.5 &mgr; and over 105deg/cm at 1.5 &mgr;.
ISSN:0003-6951
DOI:10.1063/1.1652707
出版商:AIP
年代:1969
数据来源: AIP
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5. |
EFFECTS OF WIND ON THERMAL DEFOCUSING OF CO2LASER RADIATION |
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Applied Physics Letters,
Volume 14,
Issue 2,
1969,
Page 52-54
Frederick G. Gebhardt,
David C. Smith,
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摘要:
A cw laser beam propagating in an absorbing medium may be spread, distorted, or deflected as a result of thermally self‐induced refractive index gradients. In this paper the results of an experiment are reported where a wind, transverse to the direction of propagation of a CO2laser beam, is imposed on an absorbing medium consisting of a mixture of air and propane. The experimental results show, in agreement with a simplified theoretical model, that the effect of the wind is (1) to deflect the laser beam into the wind for a certain range of wind velocities and (2) to reduce the thermal defocusing or blooming which results from the processes of thermal conduction and natural convection.
ISSN:0003-6951
DOI:10.1063/1.1652708
出版商:AIP
年代:1969
数据来源: AIP
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6. |
SPONTANEOUS REVERSE CURRENT DUE TO THE BRILLOUIN EMF IN A DIODE |
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Applied Physics Letters,
Volume 14,
Issue 2,
1969,
Page 54-56
J. B. Gunn,
J. L. Staples,
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摘要:
It has been shown by Brillouin that, to satsify the second law of thermodynamics, a diode at finite temperature must generate a dc signal which just compensates the current resulting from the rectification of thermal noise. It is shown that this signal should actually be observable (as a spontaneous reverse current) when the diode is connected to a resistor at a lower temperature than itself. A successful experiment to observe the signal is described.
ISSN:0003-6951
DOI:10.1063/1.1652709
出版商:AIP
年代:1969
数据来源: AIP
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7. |
IMPROVED CdTe FOR GAMMA DETECTION BETWEEN −100°C AND + 100°C |
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Applied Physics Letters,
Volume 14,
Issue 2,
1969,
Page 56-58
Kenneth R. Zanio,
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摘要:
Mobility‐trapping time &mgr;&tgr;+products of 2 × 10−4cm2/V for electrons and 3 × 10−5cm2/V for holes have been found in semi‐insulating cadmium telluride using transient response techniques. This represents a tenfold and fourfold increase in the &mgr;&tgr;+product of holes and electrons, respectively. The60Co response of surface barrier devices fabricated from this material indicates that gamma detection is possible over the extended temperature range of −100° to +100°C. Encapsulation techniques have been developed to prevent the degradation of these devices from the ambient atmosphere.
ISSN:0003-6951
DOI:10.1063/1.1652710
出版商:AIP
年代:1969
数据来源: AIP
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8. |
HOLOGRAPHIC POLARIZATION RECORDING WITH AN ENCODED REFERENCE BEAM |
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Applied Physics Letters,
Volume 14,
Issue 2,
1969,
Page 59-61
C. N. Kurtz,
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摘要:
Complete wavefront reconstruction, including polarization, is accomplished with an encoded reference beam, generated by using a single depolarizing diffuser as the reference beam source. The orthogonal polarization components of the object wave are encoded by different random wavefronts because of the scattering properties of the depolarizing diffuser.
ISSN:0003-6951
DOI:10.1063/1.1652711
出版商:AIP
年代:1969
数据来源: AIP
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9. |
SHEARING INTERFEROMETRY BY WAVEFRONT RECONSTRUCTION USING A SINGLE EXPOSURE |
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Applied Physics Letters,
Volume 14,
Issue 2,
1969,
Page 61-62
S. Mallick,
M. L. Roblin,
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摘要:
Wavefront reconstruction techniques are used to produce a shearing interferogram of an object. The desired shear of the object is produced by birefringent elements which make it possible to record simultaneously two holograms on a photographic plate. This avoids the errors due to the instability of the recording apparatus which are usually present when two exposures are made successively. The method is applicable to stationary phenomena and to those transient phenomena which change inappreciably during the time of exposure.
ISSN:0003-6951
DOI:10.1063/1.1652713
出版商:AIP
年代:1969
数据来源: AIP
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10. |
CURRENT OSCILLATIONS IN Sip‐i‐nDEVICES AFTER IRRADIATION WITH ONE‐MeV ELECTRONS |
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Applied Physics Letters,
Volume 14,
Issue 2,
1969,
Page 63-65
B. G. Streetman,
N. Holonyak,
H. V. Krone,
W. Dale Compton,
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摘要:
Current oscillations similar to those previously reported in various semiconductors with impurity‐induced traps have been observed in Si irradiated at 0°C with 1‐MeV electrons. The oscillations are altered by annealing of the devices at temperatures below 0°C.
ISSN:0003-6951
DOI:10.1063/1.1652714
出版商:AIP
年代:1969
数据来源: AIP
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