摘要:

We report a demonstration of the integration of individual polymer‐based light emitting devices of three different colors on the same substrate. Orange, green, and blue color devices are sequentially fabricated on the same indium–tin oxide (ITO) coated glass substrate coated with a patterned insulator on the ITO, by the spin coating of polymer thin films, the vacuum deposition of top metal contacts, and the patterning of polymer thin film by plasma etching, using the top metal contacts as the self‐aligned etching mask. The devices exhibit no degradation of device characteristics due to the integration processing compared to discrete devices on separate substrates. This demonstration shows a new path towards the fabrication of high performance low‐cost full‐color organic flat panel displays. ©1996 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.116800

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

Data are presented demonstrating whispering‐gallery mode lasing in a diode with native‐oxide lateral confinement and vertical emission. The vertical emission is obtained from distributed Bragg reflectors that confine the mode in the normal direction, and that results in a real wave vector component normal to the crystal surface external to the cavity. ©1996 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.116801

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

We demonstrate a photodetector with a narrow spectral linewidth (approximately 2 A˚) and a useful electrical‐tuning range of 35 A˚. The photodetector features a horizontal resonant cavity in which feedback is achieved using distributed feedback reflectors. The optical and electrical paths in this photodetector are orthogonal. Consequently, this normal incidence horizontal resonant cavity photodetector is completely integrable into wavelength division demultiplexing and other optoelectronic integrated circuits with a potential for high speed operation. ©1996 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.116802

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

In scanning near‐field optical microscopy, the derived image is often obscured by diffraction effects. To reduce these, we subtract two images taken at different probe heights above the surface and obtain an enhanced image with the diffraction effects largely removed. We present the modelling and explore its foundation. ©1996 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.116803

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

We report on a 36 nm tunable, single‐frequency, linearly polarized Er:Yb:glass laser. A tuning range from 1528 to 1564 nm, with output power ranging from 1 to 8 mW, is achieved. Wavelength tuning and linearly polarized output are simultaneously obtained by using a special polarizing etalon with anisotropic absorption losses. ©1996 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.116804

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

An integrated widely tunable photonic receiver including a semiconductor optical preamplifier, a two‐section grating‐assisted co‐directional coupler optical filter, and a waveguide photodetector has been produced in the InP/InGaAsP materials system. Although sidelobes and bandwidth are still higher than desired, this integrated receiver can be continuously tuned for a record‐wide 45 nm wavelength range. ©1996 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.116805

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

We have fabricated and demonstrated both wafer and waveguide electro‐optic beam scanners in KTiOPO4using alternating domain‐inverted triangular patterns in the substrate. This device is an extension of previous work in LiTaO3. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices was measured to be at least 200 kHz, which was limited by the high voltage driver. ©1996 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.116806

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

We have fabricated and studied the dynamics of In0.16Ga0.84As &lgr;‐cavity lasers focusing on the influence of carrier transport/capture and gain flattening by using optical resonant pumping and off‐resonant pumping. With the off‐resonant pumping, shoulders in the lasing pulse shape were observed, while no shoulder appeared with the on‐resonant pumping. From rate equation analysis and time‐resolved photoluminescence measurement, it was concluded that the shoulders result from carrier transport/capture effects. Saturation of the inverse rise time was observed at high pump levels. This results from gain flattening due to the steplike density of states of 2D carriers. The pulse width obtained from the laser was as narrow as 7.7 ps. ©1996 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.116807

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

Self‐assembled growth of quantum dots by molecular‐beam epitaxy is used to form the active region of a vertical‐cavity surface‐emitting laser (VCSEL). Ten layers of InGaAs quantum dots are stacked in order to increase the gain. This quantum‐dot VCSEL has a continuous‐wave operating current of 32 mA at room temperature. Emission spectra at various current injections demonstrate that the lasing action is associated with a higher‐order transition in the quantum dots. ©1996 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.116808

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

We report on the design, fabrication, and testing of an asymmetric reflection mode Fabry–Perot modulator using bacteriorhodopsin as the nonlinear cavity material. The modulator was fabricated to be impedance matched, resulting in high quality modulator performance. A large contrast ratio of 61:1, a reflectivity of 94%, and a dynamic modulation range of 55.5 at a pump; intensity of 26 mW/cm2were measured by this modulator. ©1996 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.116809

出版商:AIP    

年代:1996

数据来源: AIP