1. |
Picosecond electro‐optic sampling system |
|
Applied Physics Letters,
Volume 41,
Issue 3,
1982,
Page 211-212
J. A. Valdmanis,
G. Mourou,
C. W. Gabel,
Preview
|
PDF (175KB)
|
|
摘要:
We report the construction of a sensitive electro‐optic sampling system for the measurement of ultrafast electrical transients. This system has a temporal resolution of lessthan 4 ps (over 100‐ GHz bandwidth), better than 50‐&mgr;V sensitivity and potential for a temporal resolution reaching the single picosecond. Demonstrated applications are ultrafast photodetector response characterization and time resolved photoconductivity.
ISSN:0003-6951
DOI:10.1063/1.93485
出版商:AIP
年代:1982
数据来源: AIP
|
2. |
Self‐injected neodymium‐yttrium aluminum garnet laser with an unstable cavity |
|
Applied Physics Letters,
Volume 41,
Issue 3,
1982,
Page 213-214
E. Palange,
C. H. Brito Cruz,
P. Di Lazzaro,
F. De Martini,
Preview
|
PDF (148KB)
|
|
摘要:
The first ’’self‐injected’’ unstable resonator laser is reported. 1‐ns, high peak power, single‐mode pulses are generated with neodymium‐yttrium aluminum garnet (Nd‐YAG) laser made with the same relevant optical components of the commercial DCR1 Quanta Ray oscillator.
ISSN:0003-6951
DOI:10.1063/1.93486
出版商:AIP
年代:1982
数据来源: AIP
|
3. |
Comparison of guided wave approaches to optical bistability |
|
Applied Physics Letters,
Volume 41,
Issue 3,
1982,
Page 214-216
George I. Stegeman,
Preview
|
PDF (215KB)
|
|
摘要:
The minimum power required for a nonlinear phase shift of &pgr;/2, and the maximum propagation distance are evaluated for the semiconductors GaAs and InSb in four guided wave geometries: surface plasmons at the interface between two semi‐infinite media and guided by a thin metal film, and single and multilayer thin‐film optical waveguides. Optimum configurations compatible with guided wave technology are identified.
ISSN:0003-6951
DOI:10.1063/1.93487
出版商:AIP
年代:1982
数据来源: AIP
|
4. |
Thermal‐gradient‐induced optical deflection in TiO2crystals |
|
Applied Physics Letters,
Volume 41,
Issue 3,
1982,
Page 217-219
Y. Fujii,
K. Kajimura,
S. Ishihara,
H. Yajima,
Preview
|
PDF (253KB)
|
|
摘要:
A physical interpretation of the novel optical deflection phenomenon is reported with detailed measurements on rutile (TiO2) crystals under both static and pulse electric fields. With a model based on the thermally induced refractive index gradient, the experimental results of deflection angles are successfully explained.
ISSN:0003-6951
DOI:10.1063/1.93488
出版商:AIP
年代:1982
数据来源: AIP
|
5. |
Laser with dynamic holographic intracavity distortion correction capability |
|
Applied Physics Letters,
Volume 41,
Issue 3,
1982,
Page 219-220
Mark Cronin‐Golomb,
Baruch Fischer,
Joseph Nilsen,
Jeffrey O. White,
Amnon Yariv,
Preview
|
PDF (157KB)
|
|
摘要:
We report here a novel laser resonator with the ability to correct for intracavity phase distortions. The optical cavity employs a passive (self‐pumped) phase conjugate reflector to provide this capability.
ISSN:0003-6951
DOI:10.1063/1.93489
出版商:AIP
年代:1982
数据来源: AIP
|
6. |
Room‐temperature excitonic optical bistability in a GaAs‐GaAlAs superlattice e´talon |
|
Applied Physics Letters,
Volume 41,
Issue 3,
1982,
Page 221-222
H. M. Gibbs,
S. S. Tarng,
J. L. Jewell,
D. A. Weinberger,
K. Tai,
A. C. Gossard,
S. L. McCall,
A. Passner,
W. Wiegmann,
Preview
|
PDF (158KB)
|
|
摘要:
The quantum wells provided by a superlattice increase the binding energy of the free excitons in GaAs, permitting 300 K bistable operation of a superlattice etalon. The superlattice consists of 61 periods of 336 A˚ GaAs and 401 A˚ Ga0.73Al0.27As. The intensities required are about 1 mW/ ( &mgr;m)2and the switching times are 20–40 ns, similar to the low‐temperature pure GaAs values. Room‐temperature operation of semiconductor etalons enhances the likelihood of all‐optical logic and switching.
ISSN:0003-6951
DOI:10.1063/1.93490
出版商:AIP
年代:1982
数据来源: AIP
|
7. |
Amplification of 70‐fs optical pulses to gigawatt powers |
|
Applied Physics Letters,
Volume 41,
Issue 3,
1982,
Page 223-225
R. L. Fork,
C. V. Shank,
R. T. Yen,
Preview
|
PDF (234KB)
|
|
摘要:
We report a technique for amplifying pulses as short as 70 fs to gigawatt power levels while retaining the short duration of the incident pulse. Pulse recompression by a dispersive delay line is used to compensate temporal broadening by group velocity dispersion.
ISSN:0003-6951
DOI:10.1063/1.93474
出版商:AIP
年代:1982
数据来源: AIP
|
8. |
High‐power, single‐mode operation of an InGaAsP/InP laser with a grooved transverse junction using gain stabilization |
|
Applied Physics Letters,
Volume 41,
Issue 3,
1982,
Page 225-228
T. R. Chen,
U. Koren,
K. L. Yu,
K. Y. Lau,
L. C. Chiu,
A. Hasson,
S. Margalit,
A. Yariv,
Preview
|
PDF (292KB)
|
|
摘要:
The high‐power performance of a groove InGaAsP/InP transverse junction laser fabricated on a semi‐insulating InP substrate has been investigated. Peak power of over 250 mW/facet for pulsed operation and 11 mW/facet cw are achieved with stable fundamental mode operation and narrow beam width. It is suggested that the single‐mode operation is caused by a gain stabilizing mechanism related to the transverse junction injection profiles.
ISSN:0003-6951
DOI:10.1063/1.93475
出版商:AIP
年代:1982
数据来源: AIP
|
9. |
Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition |
|
Applied Physics Letters,
Volume 41,
Issue 3,
1982,
Page 228-230
R. D. Burnham,
D. R. Scifres,
W. Streifer,
Preview
|
PDF (204KB)
|
|
摘要:
Laser threshold current density and emission wavelength were investigated for broad area single quantum well double heterostructure (SQW DH) Ga1−xAlxAs lasers grown by metalorganic chemical vapor deposition (MOCVD) under pulsed operation at room temperature. The shortest lasing emission wavelength was 7065 A˚. At that wavelength, the threshold current density was 1 kA/cm2for a Fabry–Perot diode of 500‐&mgr;m cavity length and the external differential quantum efficiency was 48%. These values are significantly better than those previously reported for Ga1−xAlxAs DH lasers operating under similar conditions at the same wavelengths. We attribute the improved performance in part to the quantum size effect (active layer thickness 400– 600 A˚).
ISSN:0003-6951
DOI:10.1063/1.93476
出版商:AIP
年代:1982
数据来源: AIP
|
10. |
Fiber‐optical sensor for surface acoustic waves |
|
Applied Physics Letters,
Volume 41,
Issue 3,
1982,
Page 231-233
J. E. Bowers,
Preview
|
PDF (224KB)
|
|
摘要:
A new sensor is presented for detecting surface acoustic waves (SAW). The probe is constructed using single‐mode fiber components (two directional couplers, a polarization controller, and a phase modulator) with a laser diode and detector. This sensor has the advantages of being small and rugged and does not require an optical bench for stability. The sensor can detect acoustic waves over a dynamic range of 110 dB and has better amplitude sensitivity (0.0003 A˚) than has been reported for other SAW sensors.
ISSN:0003-6951
DOI:10.1063/1.93477
出版商:AIP
年代:1982
数据来源: AIP
|