摘要:

A simple wavelength chirping formula is presented which includes small nonlinearities in the net gain such as spectral hole burning. The two dominant terms are a laser‐structure‐independent derivative or ‘‘transient’’ chirp and a structure‐dependent ‘‘adiabatic’’ chirp, each with distinctly different lightwave system consequences. The two chirp contributions are indirectly related through their mutual association with relaxation oscillations. Time‐resolved spectral measurements on a number of different laser structures support the results.

ISSN:0003-6951    

DOI:10.1063/1.96770

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A transition to chaos via quasiperiodicity is observed in the output of a directly modulated self‐pulsing semiconductor laser. By sweeping the frequency and amplitude of the current modulation, several frequency‐locked states (Arnol’d tongues) are mapped out directly. Good agreement with the predictions of a rate equation model is obtained.

ISSN:0003-6951    

DOI:10.1063/1.96771

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A tunable infrared diode laser spectroscopic system for stable isotope analysis has been developed. The system uses (1) a tunable single mode PbTe/PbEuSeTe diode laser and (2) a sample cell with dual path length matched to the expected order of relative isotopic spectral intensities. Because of the unique features of such a system, isotopic molecules with similar mass and vastly different concentrations can readily be detected and measured. The principle and operation of the system are described, and the relative abundance of isotopic carbon monoxide12C16O,12C17O,12C18O has been measured for the first time by a tunable diode laser system.

ISSN:0003-6951    

DOI:10.1063/1.96722

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Laser‐pumped single pass gain measurements were made on crystals of titanium‐activated lithium germanium oxide between about 388 and 524 nm. Gain was observed throughout this spectral region with a peak cross section of about 1.7×10−19cm2near 450 nm.

ISSN:0003-6951    

DOI:10.1063/1.96723

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Optical properties of thin liquid crystal cells are found to deviate significantly from those of thick cells. Results on the liquid crystal thickness dependent phase retardation, effective birefringence, and decay time of thin E‐7 cells are presented. A simple model which is based on the partially disordered surface layers is developed to explain the observed phenomena. The concept of virtually inactive surface layers is introduced.

ISSN:0003-6951    

DOI:10.1063/1.96724

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Using a full calculation including all the couplings between the dopants and the point defects, we show that the transient effect observed at short times for the influence of oxidation on dopant diffusion in Si cannot be explained by the existence of an energy barrier to the recombination of interstitials and vacancies. We suggest that this transient is due to a transient in the self‐interstitial injection, due to high strains at the early stage of the oxidation, which can relax later through the viscoelastic flow of the oxide.

ISSN:0003-6951    

DOI:10.1063/1.96725

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A method for obtaining single crystal thin films of polydiacetylenes using electron irradiation is described. Film thickness can be controlled by adjusting the incident electron energy. Typical thicknesses between 100 and 2000 A˚ for a sample surface of a few tenths of cm2are easily obtained. Such films may find application in nonlinear optics.

ISSN:0003-6951    

DOI:10.1063/1.96726

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A palladium metal‐silicon dioxide‐silicon (Pd‐MOS) capacitor is used to study the reversible injection and extraction of atomic hydrogen from ap‐type implanted boron layer on ann‐type (1016phosphorus/cm3) substrate. 0.70±0.03 of the boron acceptors are deactivated by the hydrogen atoms diffusing from the Pd‐SiO2interface, on through the SiO2and on into the silicon surface region. It is established that the atomic hydrogen can diffuse through a 10‐nm‐thick thermal SiO2film. The isothermal uptake and release of atomic hydrogen in the silicon surface are demonstrated. The hydrogen data offer evidence that the boron acceptors and the phosphorus donors form a neutral complex during the processing of the ion implanted boron layer.

ISSN:0003-6951    

DOI:10.1063/1.96727

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

We report results on the fabrication of a natural permeable base transistor in a Si/CoSi2/Si heterostructure using molecular beam epitaxy (MBE). No photolithography is required, the transistor action being controlled by MBE growth conditions through the density and size of natural openings in the silicide base. The electrical characteristics of devices processed from such heterostructures are intimately related to the presence of these openings. Common base current gains in the range 0.01–0.95 have been observed and correlated with the size and density of the openings.

ISSN:0003-6951    

DOI:10.1063/1.96728

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

We report photosensitive capacitance‐voltage characteristics ofn+‐GaAs/Al0.3Ga0.7As/p‐GaAs heterostructures grown by molecular beam epitaxy. Inversion layers are observed due to minority charge retention in the triangular potential well at the AlGaAs/p‐GaAs interface. Details of the device structure and experimental evaluation utilizing capacitance‐voltage and current‐voltage techniques are presented.

ISSN:0003-6951    

DOI:10.1063/1.96729

出版商:AIP    

年代:1986

数据来源: AIP