1. |
Lasing characteristics of a continuous‐wave operated folded‐cavity surface‐emitting laser |
|
Applied Physics Letters,
Volume 56,
Issue 23,
1990,
Page 2267-2269
Takeshi Takamori,
Larry A. Coldren,
James L. Merz,
Preview
|
PDF (257KB)
|
|
摘要:
Room‐temperature continuous‐wave operation of a folded‐cavity surface‐emitting AlGaAs/GaAs laser with transverse junction stripe structure, which has a dry‐etched 45° internal mirror, is demonstrated for the first time. A threshold current of 42 mA and a differential external quantum efficiency of 19% per facet were obtained. A single far‐field lobe and single longitudinal mode emission were also observed.
ISSN:0003-6951
DOI:10.1063/1.102935
出版商:AIP
年代:1990
数据来源: AIP
|
2. |
Picosecond blue light pulse generation by frequency doubling of a gain‐switched GaAlAs laser diode with saturable absorbers |
|
Applied Physics Letters,
Volume 56,
Issue 23,
1990,
Page 2270-2272
Jun Ohya,
Genji Tohmon,
Kazuhisa Yamamoto,
Tetsuo Taniuchi,
Masahiro Kume,
Preview
|
PDF (290KB)
|
|
摘要:
Picosecond blue light pulse generation by frequency doubling of a gain‐switched GaAlAs laser diode in a proton‐exchanged MgO:LiNbO3waveguide is reported. High‐peak fundamental pulse power of 1.23 W is obtained by employing a laser diode with saturable absorbers. Blue light pulse of 7.88 mW maximum peak power and 28.7 ps pulse width is generated in the form of Cherenkov radiation.
ISSN:0003-6951
DOI:10.1063/1.102936
出版商:AIP
年代:1990
数据来源: AIP
|
3. |
Gain characteristics of erbium‐doped single‐mode fiber amplifiers operated at liquid‐nitrogen temperature |
|
Applied Physics Letters,
Volume 56,
Issue 23,
1990,
Page 2273-2275
Makoto Shimizu,
Makoto Yamada,
Masaharu Horiguchi,
Etsuji Sugita,
Preview
|
PDF (263KB)
|
|
摘要:
Gain characteristics of Er‐doped silica single‐mode fiber amplifiers are investigated at liquid‐nitrogen temperature (LNT). Liquid‐crystal‐polyester coated Er‐doped fibers are used to prevent an increase in microbending loss of LNT. The maximum net gain and the transmission loss for a 1.535 &mgr;m wavelength are increased at LNT. This increase is explained by a three‐level rate equation taking into account the loss increase. On the other hand, gain characteristics and the transmission loss at 1.552 &mgr;m suggest the change in the amplification mechanism at LNT from a three‐level system to a quasi‐four‐level system.
ISSN:0003-6951
DOI:10.1063/1.102937
出版商:AIP
年代:1990
数据来源: AIP
|
4. |
Spatial switching, instabilities, and chaos in a three‐waveguide nonlinear directional coupler |
|
Applied Physics Letters,
Volume 56,
Issue 23,
1990,
Page 2276-2278
N. Finlayson,
G. I. Stegeman,
Preview
|
PDF (269KB)
|
|
摘要:
A numerical study is conducted of a three‐waveguide nonlinear directional coupler. Markedly sharper transmittance characteristics than the well‐known two‐waveguide coupler are obtained at the expense of a higher switching power. Over longer distances transitions from quasi‐periodic to chaotic behavior and back take place as the power is varied.
ISSN:0003-6951
DOI:10.1063/1.102938
出版商:AIP
年代:1990
数据来源: AIP
|
5. |
Femtosecond dynamics of semiconductor‐doped glasses using a new source of incoherent light |
|
Applied Physics Letters,
Volume 56,
Issue 23,
1990,
Page 2279-2281
L. H. Acioli,
A. S. L. Gomes,
J. Miguel Hickmann,
Cid B. de Araujo,
Preview
|
PDF (356KB)
|
|
摘要:
The characterization and application of a new source of incoherent light for studies of ultrafast processes in condensed matter is described. It is based on the stimulated Raman effect in monomode optical fibers and has a coherence time of ∼80 fs. As an application, we have measured the homogeneous dephasing time of CdSxSe1−x‐doped glasses and obtained a value of 14±4 fs for above‐gap excitation at room temperature.
ISSN:0003-6951
DOI:10.1063/1.102939
出版商:AIP
年代:1990
数据来源: AIP
|
6. |
Quantum‐confined field‐effect wavelength tuning in a three‐terminal double quantum well laser |
|
Applied Physics Letters,
Volume 56,
Issue 23,
1990,
Page 2282-2284
F. Y. Huang,
Preview
|
PDF (350KB)
|
|
摘要:
A three‐terminal quantum‐confined field‐effect double quantum well laser device is proposed. The wavelength shift scheme caused by the field‐induced change in the energy levels is demonstrated. With the current injected and the electric field applied to different wells, wide range wavelength shift can be achieved by changing the applied field.
ISSN:0003-6951
DOI:10.1063/1.102940
出版商:AIP
年代:1990
数据来源: AIP
|
7. |
Optical bistability in nonlocally nonlinear periodic structures |
|
Applied Physics Letters,
Volume 56,
Issue 23,
1990,
Page 2285-2287
Gaetano Assanto,
George I. Stegeman,
Preview
|
PDF (267KB)
|
|
摘要:
The transmission and reflection of electromagnetic guided waves by a periodic structure with a delocalized intensity‐dependent nonlinearity was studied using a semianalytical approach. We show that such a nonlocal nonlinear distributed feedback grating can exhibit bistable and switching behaviors depending upon the input intensity and the detuning.
ISSN:0003-6951
DOI:10.1063/1.102941
出版商:AIP
年代:1990
数据来源: AIP
|
8. |
Alexandrite laser pumped by semiconductor lasers |
|
Applied Physics Letters,
Volume 56,
Issue 23,
1990,
Page 2288-2290
Richard Scheps,
Bernard M. Gately,
Joseph F. Myers,
Jerzy S. Krasinski,
Donald F. Heller,
Preview
|
PDF (304KB)
|
|
摘要:
We report the first operation of a direct diode‐pumped tunable chromium‐doped solid‐state laser. A small alexandrite (Cr:BeAl2O4) crystal was longitudinally pumped by two visible laser diodes. The threshold pump power was 12 mW using theR1line at 680.4 nm for the pump transition, and the slope efficiency was 25%. The measured laser output bandwidth was 2.1 nm.
ISSN:0003-6951
DOI:10.1063/1.102942
出版商:AIP
年代:1990
数据来源: AIP
|
9. |
Generation of 41 mW of blue radiation by frequency doubling of a GaAlAs diode laser |
|
Applied Physics Letters,
Volume 56,
Issue 23,
1990,
Page 2291-2292
W. J. Kozlovsky,
W. Lenth,
E. E. Latta,
A. Moser,
G. L. Bona,
Preview
|
PDF (229KB)
|
|
摘要:
A monolithic ring resonator of KNbO3was used for efficient frequency doubling of a 856 nm GaAlAs diode laser. A special electronic servo technique was devised to lock the diode laser frequency to the KNbO3cavity so that stable generation of blue output was obtained. With 105 mW of incident near‐infrared power, 41 mW of 428 nm radiation were produced. The conversion efficiency from electrical input power into the diode laser to blue output was ∼10%.
ISSN:0003-6951
DOI:10.1063/1.102943
出版商:AIP
年代:1990
数据来源: AIP
|
10. |
Linewidth enhancement factor in strained quantum well lasers |
|
Applied Physics Letters,
Volume 56,
Issue 23,
1990,
Page 2293-2294
N. K. Dutta,
J. Wynn,
D. L. Sivco,
A. Y. Cho,
Preview
|
PDF (194KB)
|
|
摘要:
The linewidth enhancement factor &agr; in an In0.2Ga0.8As/GaAs strained‐layer multiple quantum well (MQW) laser has been determined from the spontaneous emission spectra below threshold. The measured &agr; at the lasing wavelength is found to be 1.0 compared to a value of 5 typically observed for InGaAsP/InP double‐heterostructure lasers. The smaller &agr; shows that single wavelength strained MQW lasers may have smaller chirp width under modulation and also smaller cw linewidth.
ISSN:0003-6951
DOI:10.1063/1.102944
出版商:AIP
年代:1990
数据来源: AIP
|