摘要:

The orientation dependence of the backscattered yield of 1.0‐MeV helium ions has been used to determine the lattice location of several group‐III and group‐V elements implanted at elevated temperatures in Si and Ge. We find that for the slower diffusants, i.e. group‐V elements in Si and group III in Ge, a considerably higher fraction is located on substitutional sites than for the faster diffusants. The concentration of Sb and Bi on substitutional lattice sites can exceed the equilibrium solubility by at least an order of magnitude. For In and Tl in Si, we find equal numbers of ions on the ⟨111⟩ interstitial lattice sites and on the substitutional lattice sites which suggest that some sort of pairing occurs between interstitial and substitutional impurities; again, the substitutional content can exceed the equilibrium solubility limit by large factors.

ISSN:0003-6951    

DOI:10.1063/1.1728214

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

Infrared Bragg diffraction from the spin and acoustic components of a longitudinal magnetoelastic wave has been observed as a function of &thgr;e, the angle between the bias field and the magnetoelastic wave vector. The two diffraction components are identified by the polarization of the diffracted beam, and reasonable agreement with theory is obtained. Nonlinear effects are observed when &thgr;eis greater than 50°.

ISSN:0003-6951    

DOI:10.1063/1.1728215

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

The electric field that results from a high concentration diffusion is used to modify the penetration depth of another diffusion. This effect can be designed to overcome the usual ``push out'' effect in an NPN silicon transistor. In extreme cases, the base can be modified to the extent that a ``sucked in'' configuration results.

ISSN:0003-6951    

DOI:10.1063/1.1728216

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

The effect of compressive uniaxial stress on the threshold field for nucleation of high field domains inn‐type Ge at 27°K has been measured. The increase in threshold field is approximately quadratic in stress and is about 15% for a stress of 104kg/cm2applied along a ⟨100⟩ direction parallel to the current and about 37% for a stress of 104kg/cm2applied along a ⟨100⟩ perpendicular to the current. These results indicate that, while in a strong electric field the ⟨110⟩ valleys are occupied at high stresses, transfer of electrons to these valleys is not the cause of bulk negative differential conductivity inn‐type Ge.

ISSN:0003-6951    

DOI:10.1063/1.1728217

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

X‐band microwave emission fromn‐type InSb during avalanche plasma formation at 77°K is reported. A magnetic field is not required.

ISSN:0003-6951    

DOI:10.1063/1.1728218

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

Measurements of the spectrum of microwave radiation scattered from a nonequilibrium liquid (CCl4at 71°C) are presented. It is shown that the mean drift velocities of the refractive index inhomogeneities responsible for the scattering can be measured. The experimental results are consistent with the theory of wave propagation in a turbulent medium.

ISSN:0003-6951    

DOI:10.1063/1.1728219

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

The laser emission spectra of flash‐lamp—pumped solutions of rhodamine B in ethanol were examined. A ``hole,'' located at 6261 Å, is seen in the laser emission spectra, but not in the fluorescence spectra. There is no absorption of the unexcited molecules at this wavelength and so the appearance of the hole is tentatively attributed to excited state absorption.

ISSN:0003-6951    

DOI:10.1063/1.1728220

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

Experimental observations of noncollinear parametric interactions in ADP pumped by 3472‐Å laser light are reported for a wide variety of signal and idler frequencies, crystal orientations, and observation directions. The results provide the first confirmation of the predictions of newly extended theory.

ISSN:0003-6951    

DOI:10.1063/1.1728221

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

Results of etch rate, index of refraction, uv transmission, and dc conductivity measurements made on reactively sputtered Si3N4films are compared with results of similar measurements made on pyrolytically deposited Si3N4films. The observed differences in the results indicate that reactively sputtered films contain excess Si. Heating the sputtered films in vacuum, N2, or A changes the observed properties. The changes are interpreted as being due to the reaction of some of the excess Si with trapped N2in the films.

ISSN:0003-6951    

DOI:10.1063/1.1728222

出版商:AIP    

年代:1967

数据来源: AIP

摘要:

The momentum and energy relaxation times of a two‐valley semiconductor are calculated as functions of the electron temperatures in different valleys. From the expression for the small signal microwave current under hot electron conditions, the upper frequency limit of the bulk‐microwave devices is estimated.

ISSN:0003-6951    

DOI:10.1063/1.1728223

出版商:AIP    

年代:1967

数据来源: AIP