1. |
Submicroscopic contact imaging with visible light by energy transfer |
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Applied Physics Letters,
Volume 40,
Issue 3,
1982,
Page 195-197
U. Ch. Fischer,
H. P. Zingsheim,
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摘要:
The resolution of contact imaging with light is limited by the distance between object and image and not by the wavelength. Contact imaging with visible light at submicroscopic resolution (100 nm) is demonstrated using the concept of imaging by energy transfer. The bleaching of a dye is inhibited by energy transfer to a metal in close proximity. This mechanism is exploited for imaging a planar metal pattern onto a film of a cyanine dye.
ISSN:0003-6951
DOI:10.1063/1.93050
出版商:AIP
年代:1982
数据来源: AIP
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2. |
Dynamical switching characteristics of a bistable injection laser |
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Applied Physics Letters,
Volume 40,
Issue 3,
1982,
Page 198-199
K. Y. Lau,
Ch. Harder,
A. Yariv,
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摘要:
The switching characteristics of a bistable injection laser with very large hysteresis is examined. Switch‐on delays are shown to exhibit a ’’critical’’ part and a ’’noncritical’’ part, both of which can be reduced by increasing the overdrive current. It is possible to obtain fairly fast switching time (<20 ns) with a strong overdrive. Nominal delays of 100–200 ns result under moderate overdrives. These long time scales are due to long carrier lifetimes in the carrier‐depleted absorption section, a property intrinsic to these bistable injection lasers.
ISSN:0003-6951
DOI:10.1063/1.93051
出版商:AIP
年代:1982
数据来源: AIP
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3. |
Observations of the morphology of laser‐induced damage in copper mirrors |
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Applied Physics Letters,
Volume 40,
Issue 3,
1982,
Page 200-202
S. J. Thomas,
R. F. Harrison,
J. F. Figueira,
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摘要:
The results of multiple‐pulse damage tests on copper mirrors using 1.7‐ns CO2lasers are reported. The measured reduction in the brightness reflectivity of the mirrors is shown to be correlated to the dramatic appearance of fine scale microstructure on the mirror surface. Scanning electron micrographs of this surface structure are presented and possible explanations of the effects are discussed.
ISSN:0003-6951
DOI:10.1063/1.93052
出版商:AIP
年代:1982
数据来源: AIP
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4. |
Far‐infrared imaging antenna arrays |
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Applied Physics Letters,
Volume 40,
Issue 3,
1982,
Page 203-205
Dean P. Neikirk,
David B. Rutledge,
Michael S. Muha,
Hyeon Park,
Chang‐Xuan Yu,
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摘要:
A far‐infrared imaging antenna array has been demonstrated for the first time. The array is a line of evaporated silver bow‐tie antennas on a fused‐quartz substrate with bismuth‐microbolometer detectors. The measured optical transfer function shows that the system is diffraction limited. This imaging array should find direct application in fusion plasma diagnostics. If the microbolometers can be replaced by more sensitive diode detectors, the array should also find application in radiometry and radar.
ISSN:0003-6951
DOI:10.1063/1.93053
出版商:AIP
年代:1982
数据来源: AIP
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5. |
External off and on switching of a bistable optical device |
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Applied Physics Letters,
Volume 40,
Issue 3,
1982,
Page 205-207
S. S. Tarng,
K. Tai,
J. L. Jewell,
H. M. Gibbs,
A. C. Gossard,
S. L. McCall,
A. Passner,
T. N. C. Venkatesan,
W. Wiegmann,
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摘要:
A GaAs etalon has been switched on in a detector‐limited time of 200 ps by a 10‐ps, 600‐nm, 1‐nJ pulse and switched off in ⩽20 ns by a 7‐ns, 600‐nm, 300‐nJ pulse.
ISSN:0003-6951
DOI:10.1063/1.93054
出版商:AIP
年代:1982
数据来源: AIP
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6. |
High‐efficiency, low‐threshold, Zn‐diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition |
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Applied Physics Letters,
Volume 40,
Issue 3,
1982,
Page 208-210
C. S. Hong,
J. J. Coleman,
P. D. Dapkus,
Y. Z. Liu,
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摘要:
Deep Zn‐diffused, 4‐&mgr;m stripe thinpactive layer GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition are reported. Threshold currents as low as 40 mA (length 220 &mgr;m), a characteristic temperature as large as 170 °C, and external differential quantum efficiencies as high as 80–90% are obtained. Single longitudinal and transverse mode operation of these lasers is also observed.
ISSN:0003-6951
DOI:10.1063/1.93042
出版商:AIP
年代:1982
数据来源: AIP
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7. |
Fresnel reflection and transmission at a planar boundary from media of equal refractive indices |
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Applied Physics Letters,
Volume 40,
Issue 3,
1982,
Page 210-212
C. Lee Giles,
Walter J. Wild,
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摘要:
Some interesting properties of the Fresnel equations governing the reflection of plane electromagnetic waves at an interface between differing media are presented. The phenomenon of reflection that is independent of angle of incidence is shown to be theoretically possible if the media possess different magnetic permeabilities.
ISSN:0003-6951
DOI:10.1063/1.93043
出版商:AIP
年代:1982
数据来源: AIP
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8. |
Interference enhanced Kerr spectroscopy for very thin absorbing films |
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Applied Physics Letters,
Volume 40,
Issue 3,
1982,
Page 212-214
G. A. N. Connell,
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摘要:
A new method of obtaining polar Kerr spectra from very thin highly absorbing films (&agr;≳104cm−1) is described. The technique which is termed interference enhanced Kerr spectroscopy is shown theoretically to produce a gain in the Kerr intensity of 10–103(depending on the optical constants of the material) over that expected from a thick sample. The potential of the method is demonstrated theoretically using MnBi data and experimentally using an amorphous Tb‐Fe alloy. The use of this interference technique for studies of other mode conversion phenomena is also mentioned.
ISSN:0003-6951
DOI:10.1063/1.93044
出版商:AIP
年代:1982
数据来源: AIP
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9. |
Transient frequency and temperature variation of GaInPAs lasers under pulsed excitation |
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Applied Physics Letters,
Volume 40,
Issue 3,
1982,
Page 214-216
Ryoichi Ito,
Masuo Suyama,
Nagaatsu Ogasawara,
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摘要:
Transient frequency and temperature variation of GaInPAs buried heterostructure lasers have been measured by means of a Michelson interferometer. It is demonstrated that the thermal resistance, the heat generation rate in the active layer, and the internal quantum efficiency can be deduced by this method. The dependence of the laser frequency on current is also estimated.
ISSN:0003-6951
DOI:10.1063/1.93045
出版商:AIP
年代:1982
数据来源: AIP
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10. |
Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy |
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Applied Physics Letters,
Volume 40,
Issue 3,
1982,
Page 217-219
W. T. Tsang,
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摘要:
Extremely low threshold GRIN‐SCH lasers with single and double active layers were prepared by molecular beam epitaxy as a result of an increased optical confinement, a significant reduction in the internal loss &agr;i, and the increased gain constant &bgr;. AveragedJth250 A/cm2and 160 A/cm2for broad‐area Fabry–Perot diodes of cavity lengths 380 and 1125 &mgr;m, respectively, and averaged external differential quantum efficiency &eegr;Dof 65–80 % were obtained.
ISSN:0003-6951
DOI:10.1063/1.93046
出版商:AIP
年代:1982
数据来源: AIP
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