摘要:

The effects of injected carriers on the refractive index of an AlGaAs/GaAs semiconductor laser waveguide are investigated through measurements of the carrier‐induced phase shift and free‐carrier absorption of a guided probe laser beam at a wavelength below the band gap of the GaAs waveguide. The carrier densities and carrier lifetimes at various injection current levels can be deduced directly from these measurements. A carrier‐induced phase shift of more than &pgr;/2 is observed.

ISSN:0003-6951    

DOI:10.1063/1.97995

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We consider Faraday rotation by a dilute suspension of small particles embedded in a host. Using the Maxwell‐Garnett approximation, we obtain an expression for the complex effective dielectric tensor of the composite in the low concentration limit. The Faraday coefficient becomes anomalously large near the surface plasmon frequency of the small particles. Numerical examples are given for the frequency‐dependent off‐diagonal part of the dielectric tensor and for the angle of rotation.

ISSN:0003-6951    

DOI:10.1063/1.97996

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

The thermal reaction of Ti with Si3N4was studied over the temperature range from 500 to 800 °C with Auger electron spectroscopy, Rutherford backscattering spectrometry, and transmission electron microscopy. The initial reaction consumes part of the silicon nitride and yields a two‐layer morphology of Ti(N) on top of Ti5Si3. As the reaction proceeds, the Ti5Si3layer is converted to TiSi2. At 800 °C, a multilayer morphology is observed containing primarily TiN and TiSi2.

ISSN:0003-6951    

DOI:10.1063/1.98259

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Single InGaAs/InP quantum wells and superlattices grown by gas source molecular beam epitaxy were subjected to brief anneals at temperatures in the 600–850 °C range. The resulting increases in the well thickness and changes in composition were monitored by low‐temperature photoluminescence and transmission electron microscopy. Very sharp well‐barrier interfaces are found to be present even after annealing at the highest anneal temperature. These results can be modeled assuming diffusivity proportional to the square of concentration withD0=7×1010cm2/s and an activation energy ofQ=5.8 eV.

ISSN:0003-6951    

DOI:10.1063/1.97997

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Arsenic profiles across the SiO2/Si interface have been measured with secondary ion mass spectrometry under different O+2bombardment conditions using As implanted into SiO2and Si for calibration purposes. Radiation‐enhanced segregation causes interfacial pile‐up in profiles obtained under oblique incidence bombardment both with and without O2backfill. Thus, implantation profiles through SiO2are best measured using near normal incidence bombardment. However, if As is actually piled up at the interface, oblique incidence bombardmentinvacuois preferable since oxygen saturation conditions broaden the interfacial peak.

ISSN:0003-6951    

DOI:10.1063/1.97998

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Submicron (<0.25 &mgr;m) wide lines of iron have been deposited by low‐energy (0.5–3.0 keV) electron beam induced decomposition of iron pentacarbonyl. Selective area thermal decomposition of iron pentacarbonyl has also been demonstrated. It was found that under certain conditions, the thermal decomposition only occurred on areas where a thin iron film had been previously deposited by electron stimulated decomposition. At 125 °C, the measured thermal decomposition probability was roughly 900 times greater on the deposited iron than previously reported data show for thermal decomposition on bare silicon. Anomalously high deposition yields of 15 to 50 iron atoms per electron were measured during electron stimulated decomposition.

ISSN:0003-6951    

DOI:10.1063/1.97999

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Selective deposition of tungsten on metals and silicon in the presence of insulators is important in several very large scale integrated circuit applications. The results of experiments investigating this selectivity are reported. The influence of the total area and composition of the selective growth surface on the nucleation of tungsten on adjacent insulators are illustrated. Specifically, nucleation is shown to occur preferentially in close proximity to the area of tungsten growth. The extent of nucleation on silicon dioxide compared to silicon nitride or phosphorus‐doped glass is dependent on the composition of the surface on which the initial selective tungsten growth occurs. The qualitative observations presented here form the basis for further quantitative investigations.

ISSN:0003-6951    

DOI:10.1063/1.98000

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

The refractive index changes near the excitonic absorption edge in a GaAs‐AlxGa1−xAs quantum well structure due to an external electric field have been calculated. Calculated maximum variation in the refractive index is approximately −0.07 for an electric field of 80 kV/cm for both a 60‐A˚‐thick and a 100‐A˚‐thick GaAs‐Al0.4Ga0.6As quantum wells. Also calculated results indicate that the forbidden excitonic transition, which comes to be allowed in the presence of an external electric field, has much greater effect for relatively thick quantum wells.

ISSN:0003-6951    

DOI:10.1063/1.98001

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

A high‐speed movie technique was used to investigate the growth front movement during electron beam recrystallization of thin silicon layers on insulating material. In a laterally epitaxial growth process, it was clearly observed that the molten zone shape dramatically changes across a seed opening, which is due to nonuniformity in heat dissipation toward the substrate in the vicinity of the seed opening. The molten zone width and velocities of the melt front and growth front were quantitatively analyzed using digital film motion analysis. The growth front velocity was found to drastically change by ∼30% across the seed opening.

ISSN:0003-6951    

DOI:10.1063/1.98002

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Resonant tunneling of holes is observed at 85 K in an AlAs/GaAs/AlAs/GaAs/AlAs triple barrier structure sandwiched byp‐GaAs layers. Two to seven resonances are observed in the current‐voltage characteristics for all samples and bias polarities. The resonance peak voltages are observed to decrease according to the increase of the well thickness. The edge energies of hole subbands in the well are calculated from the resonance voltages, and comparison with the theoretical value is discussed.

ISSN:0003-6951    

DOI:10.1063/1.98003

出版商:AIP    

年代:1987

数据来源: AIP