摘要:

The core structure of oxidation‐induced extrinsic stacking faults in silicon has been studied by high‐resolution transmission electron microscopy. The stacking faults were viewed edge‐on in thin (011) crystals so that two sets of (111) lattice planes were imaged simultaneously. The images confirm the stacking sequenceA‖aCcB‖b(vertical bars denote twinning planes) that was predicted by Hornstra for the stacking‐fault core.

ISSN:0003-6951    

DOI:10.1063/1.90103

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

For pyroelectric glasses, the nonapplicability of the Third Law of Thermodynamics is shown to imply that the pyroelectric coefficientp(T) remains nonzero as the temperatureTtends to zero. The ratio,p/C,Cbeing the specific heat, is also shown to be proportional toT−1in the low‐temperature limit.

ISSN:0003-6951    

DOI:10.1063/1.90104

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A new class of devices employing the controlled motion of individual domain walls in a ferroelectric single crystal is outlined. Unlike older ferroelectric devices, these devices make no use of any coercive threshold. A working prototype device capable of logic and pulse amplification is presented. An analog readout device is described which is capable of repeatedly generating a fixed waveform of substantial complexity and length. An experimental device of this kind and its resulting waveforms are presented. Other devices including shift register memories and optical area scanners are briefly mentioned.

ISSN:0003-6951    

DOI:10.1063/1.90105

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

A high radiance unstable resonator HF laser (&lgr;=2.8 &mgr;m) has been used to produce plasmas from Al and C targets in a vacuum. Measurements of the plasma properties at irradiance levels up to 7×1010W cm−2have been made using a range of diagnostic techniques (x‐ray detectors, charge probes, streak photography, and plasma reflection).

ISSN:0003-6951    

DOI:10.1063/1.90106

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The diffusivities (D) of a Pd77.5Cu6Si16.5glass above the glass transition agree within a factor of 3 with diffusivities (D&eegr;) evaluated from viscosity data using the Stokes‐Einstein relationship. Below the glass transition, however, the measuredDis critically related to the state of structure and can be many orders of magnitude higher thanD&eegr;. The time constant for structural relaxation is suggested to be at least three orders of magnitude longer than that for diffusion processes.

ISSN:0003-6951    

DOI:10.1063/1.90107

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

We demonstrate the unique capability of a repetitively pulsed laser to ’’write’’ a monocrystalline pattern in ion‐implanted amorphous silicon layers. Ion‐channeling data, from the samples scanned with a focused beam of aQ‐switched Nd : YAG laser, show a continuity of the single‐crystal layer produced with spatially overlapping laser pulses, at 60–80 MW cm−2. Scattering yields indicate very high substitutionality of the implanted ions and an interdependence between the laser power density and the depth redistribution of the implants. Finally, similar recrystallization was obtained with a CO2laser at 10.6 &mgr;m.

ISSN:0003-6951    

DOI:10.1063/1.90109

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

We have investigated the structure of amorphous Ge films with 10‐keV Ge74ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion‐implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network.

ISSN:0003-6951    

DOI:10.1063/1.90110

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

cw laser action was achieved on the2P1/2→2P3/2transition of the iodine atom by energy transfer from the1&Dgr; metastable state of O2. The excited oxygen was generated chemically by flowing chlorine gas through a basic solution of 90% H2O2. The effluent from the oxygen generator was mixed with molecular iodine at the entrance of a longitudinal flow laser cavity where the I2was dissociated by a small amount of O2(1&Sgr;) that was present in the flow due to energy pooling processes. The measured output power was greater than 4 mW.

ISSN:0003-6951    

DOI:10.1063/1.90088

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

We describe the successful operation of a buried heterojunction electroabsorption modulator. This modulator, fabricated from AlyGa1−yAs1−xSbx/GaAs1−x′Sb@qLx′, is particularly well suited for use with narrow spectral width sources such as the Nd : YAG fiber lasers. The GaAs1−x′Sbx′crystal composition can be adjusted to permit operation in the wavelength range 0.9–1.2 &mgr;m. At 1.06 &mgr;m we have obtained an extinction ratio of 13 dB and a projected insertion loss of 4.0 dB. The low device capacitance permits operation at greater than 900 MHz.

ISSN:0003-6951    

DOI:10.1063/1.90089

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Room‐temperature Ga(1−x)AlxAs‐GaAs DH lasers with very low threshold current densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices have been fabricated with thresholds lower than the best values reported for comparable devices grown by liquid‐phase epitaxy. The lowest threshold achieved is 590 A/cm2for a laser with an active layer thickness ofd=1100 A˚ and Ga(1−x)AlxAs confinement layers withx∼0.50.

ISSN:0003-6951    

DOI:10.1063/1.90090

出版商:AIP    

年代:1978

数据来源: AIP