摘要:

The single‐crystal growth of the cubic spinel, MgGa2O4, by the Czochralski technique is reported. Moreover, experiments are described in which this material is used as a substrate for the firstdirect(single‐step) liquid‐phase epitaxial growth of ⟨111⟩ (Ga,Al)As.

ISSN:0003-6951    

DOI:10.1063/1.1654307

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

It is discussed in detail why a result by Van Zandt and an implication by Schwarz (that the magnitude of the Schwarz‐Hora effect can be linear in the electron current) are incorrect. The large discrepancy noted in an earlier paper between the expected magnitude of the effect and the value which Schwarz claims to have measured thus persists.

ISSN:0003-6951    

DOI:10.1063/1.1654308

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

On application of uniaxial pressure perpendicular to the junction, the threshold current of GaAs double‐heterostructure injection lasers at room temperature is observed to increase to a certain critical pressureP0, and then decrease with further increase in pressure. A flip of the polarization of laser light occurs atP0. This behavior can be explained using a model previously proposed to explain the reduction in threshold of homostructure GaAs lasers upon application of uniaxial pressure.

ISSN:0003-6951    

DOI:10.1063/1.1654309

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The time to failure of a compound exhibiting dynamic scattering, operated under dc excitation, is shown to be inversely proportional to current density. Two failure modes have been observed, both related to an anodic electrochemical reaction. Failure occurs in the compoundp‐methoxybenzylidene‐p′‐amino phenyl acetate (APAPA) after the passage of 1.2 × 106C/mole through the operating cell. The quantity of charge passed through, in C/mole of cell material, is recommended as a figure of merit for materials which fail due to electrochemical processes.

ISSN:0003-6951    

DOI:10.1063/1.1654310

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The lateral spread of implanted ions is measured in boron‐implanted silicon by junction delineation. The maximum lateral spread of ap‐type region from a mask edge is about half the junction depth. Typical values are 0.4–0.6 &mgr; inn‐type substrates of 0.1 &OHgr; cm at an implantation energy in the range 75–250 keV with the dose level of 1×1015/cm2, or at 150 keV with the dose in the range 1×1014–5×1015/cm2. These experimental values are well interpreted by the theory in which the lateral spread is expressed as a complementary error function with the standard deviation calculated by the LSS theory.

ISSN:0003-6951    

DOI:10.1063/1.1654311

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Stimulated parametric fluorescence emission tunable over the range from 0.96 to 1.16 &mgr; has been obtained using a barium sodium niobate crystal pumped by a frequency‐doubled and mode‐locked Nd3+:glass laser. The pump radiation in the form of a train of picosecond pulses produced infrared parametric fluorescence pulses, less than 10 psec in duration and with average peak powers on the order of 300 W when pumped with a power density of 300 MW/cm2.

ISSN:0003-6951    

DOI:10.1063/1.1654312

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Tunable laser spectroscopy measurements on low‐pressure gases have been performed using magnetic‐field‐tuned lead‐salt semiconductor diode lasers in the 4‐ to 7‐&mgr;m region. Use of magnetic field tuning in conjunction with the conventional current tuning is shown to significantly increase the versatility of diode lasers in high‐resolution spectroscopy. Details of the tuning characteristics for fields up to 90 kG are presented.

ISSN:0003-6951    

DOI:10.1063/1.1654313

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

A YAG: Nd laser system is described which supplies giant pulses which are within 3% constant in shape and size and do not depend on the pump energy and the shape of the pumping pulses. A LiNbO3crystal cut at the Brewster angle is used as aQswitch. Since the oscillation of the laser in the off state is used to open theQswitch, a definite inversion always occurs within the laser rod at the instant the switch opens that is due to the threshold of the off state and depends solely on the cavity characteristics. The height of the giant pulses is moreover easily controlled by varying the voltage applied to the LiNbO3crystal.

ISSN:0003-6951    

DOI:10.1063/1.1654314

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The photoelectromagnetic effect (PEM effect) on indium‐implanted silicon was examined as a function of ion dose in the range 1014–1015ions/cm2and as a function of annealing up to 800°C. The experimental results indicated that the measurements of the PEM voltage can be utilized as a means of detecting changes in lattice ordering in ion‐implanted silicon that were caused by the annealing treatment. Combining the results of the PEM voltage measurements with those of electron diffraction examinations, it was found that crystal reordering in In‐implanted silicon by postannealing occurred from an inward part of the host crystal rather than from the ion‐implanted surface.

ISSN:0003-6951    

DOI:10.1063/1.1654315

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

A proposal for a new method of phase matching in nonlinear optical interactions is made. A periodic perturbation of the surface of a thin‐film waveguide generates space harmonics with new propagation constants which can be phase matched. An analysis of this proposal shows it to be particularly interesting for a class of thin‐film nonlinear devices using the cubic optically isotropic semiconductors (such as GaAs, GaP, etc.) which possess high nonlinear optical coefficients but are not phase matchable by the conventional birefringent techniques.

ISSN:0003-6951    

DOI:10.1063/1.1654316

出版商:AIP    

年代:1972

数据来源: AIP