摘要:

The available bandwidth for a monolithic ZnOpn‐diode memory correlator can be significantly increased by employing a thicker ZnO film which adapts the device to the Sezawa mode of operation. Herein we report the first Sezawa‐modepn‐diode‐array memory correlator and describe its operating characteristics. The device displays a 3‐dB bandwidth of 20 MHz at a center frequency of 164 MHz; storage times are on the order of tens of milliseconds.

ISSN:0003-6951    

DOI:10.1063/1.90672

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

A direct observation of the influence of an externally applied electrostatic field on the sublimation steps on (100) surfaces of KCl is reported. Typically, round‐cornered square spirals were found to be distorted into round‐cornered rhombical spirals in the presence of a field. The results are interpreted in terms of charged kinks on the surface.

ISSN:0003-6951    

DOI:10.1063/1.90673

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The anelastic loss of a piezoelectric material is calculated from its complex dielectric and piezoelectric coefficients. This loss is found to be dependent on specimen geometry. It is shown that neglect of the out‐of‐phase piezoelectric modulus, as in earlier analyses, leads to an overestimate of the anelastic loss.

ISSN:0003-6951    

DOI:10.1063/1.90674

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Current densities of 20 MA/cm2are obtained in the focus of a modest (450 kV, 60 kA) beam in a conical ’’parapotential’’ diode. The electron flow in the diode is studied using pinhole photography and bremsstrahlung angular distribution measurements.

ISSN:0003-6951    

DOI:10.1063/1.90675

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Narrow‐bandwidth infrared radiation has been detected from amorphous As50Te50threshold switches in the ’’on’’ state of thin parallel plane devices which possess optical feedback. The radiation has a fast rise time and is dependent on a minimum threshold ’’on’’ current which is independent of device area. The radiation output is substantially independent of device temperature and is thus not thermally activated. The output is not observed in heterojunction devices which have little optical feedback.

ISSN:0003-6951    

DOI:10.1063/1.90676

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Much interest has been expressed in the ternary IB‐III‐VI2group semiconductors for use in electro‐optical devices such as solar cells. Subsets of these, AgInS2, AgInSe2, CuInS2, and CuInSe2, have been combined to form the pentenary alloy system Cu1−yAgyInS2(1−x)Se2x. With such an alloy the band gap may be varied while keeping the lattice constant fixed. Samples were prepared by reacting stoichiometric powder mixtures at about 900 °C. X‐ray diffractometry tests suggest the alloys maintained complete solid solubility throughout the system in a chalcopyrite‐type crystal structure. From cathodoluminescence studies on pressed bars of these powders the band‐gap energies were estimated at 300 °K. These tests suggest that the alloys are all direct‐band‐gap semiconductors.

ISSN:0003-6951    

DOI:10.1063/1.90677

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Polysilicon films, about 0.6 &mgr;m thick, deposited on SiO2grown on silicon substrates, were implanted with different doses of11B,31P, or75As ions and laser annealed with aQ‐switched Nd‐glass or ruby laser. It was found that complete activation of the implanted dopant ions could be achieved with a pulse power density as low as 16 MW/cm2, that a two to three times reduction of resistivity could be achieved in implanted polysilicon films compared with samples thermally annealed, and that there were little or no redistributions of the implanted profiles.

ISSN:0003-6951    

DOI:10.1063/1.90678

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

An MOS field‐effect transistor which has a buried channel structure and operates in the depletion mode is first fabricated on a molecular‐beam epitaxial silicon layer. The field‐effect mobility of this MOSFET is comparable to those of the MOSFET’s fabricated on conventional single crystals of silicon.

ISSN:0003-6951    

DOI:10.1063/1.90655

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

The presence of crystalline and amorphous elemental arsenic in films grown by the thermal oxidation of GaAs under arsenic trioxide vapor was observed using Raman backscattering. Arsenic was detected for all oxidation temperatures (350–500 °C) and resulting film thicknesses (∼80–1000 A˚). Chemical etching demonstrated that the arsenic is retained in the interfacial region during growth and does not result from physical adsorption of gas‐phase species during cooling.

ISSN:0003-6951    

DOI:10.1063/1.90656

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Electroabsorption, or the Franz‐Keldysh effect, has been measured in Ga0.24In0.76As0.52P0.48with an energy gap of 1.03 eV. Absorption coefficients were determined by measuring the transmission versus bias through a double‐heterostructure photodiode. The results are in good agreement with theory and are particularly applicable to modulators and detectors in the 1.25–1.30‐&mgr;m band of interest in optical‐fiber transmission.

ISSN:0003-6951    

DOI:10.1063/1.90657

出版商:AIP    

年代:1979

数据来源: AIP