摘要:

Excitation of a small repetitively pulsed XeCl laser by a magnetic pulse compressor (MPC) is reported. The MPC makes use of a saturable inductor constructed out of relatively low frequency ferrites. It compresses a 300‐ns pulse into a 50‐ns pulse, enabling a lowdi/dt, long life thyratron to drive a fast discharge laser. The laser has operated at 750 Hz for several hours with an average optical output power of 3.5 W.

ISSN:0003-6951    

DOI:10.1063/1.93173

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

A new 1×Nsingle‐mode integrated optical star coupler is presented. Directional couplers with linearly changing spacing are utilized to optimize various loss aspects. The device is fabricated on glass substrates by Na+↔K+ion exchange.

ISSN:0003-6951    

DOI:10.1063/1.93174

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Efficient Raman conversion of microsecond pulse XeF laser radiation into the blue‐green region via the second Stokes shift in hydrogen has been demonstrated using a Raman oscillator‐amplifier scheme. Strong depletion of the pump and the first Stokes radiation accompanied by a dominant second Stokes output was observed for the first time.

ISSN:0003-6951    

DOI:10.1063/1.93175

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

The mechanism of asymmetric longitudinal mode competition in InGaAsP/InP lasers is discussed. It is shown that the asymmetric mode competition is not due to the spatial hole burning. When we assume that the energy relaxation time of electrons in the conduction band is ∼0.3 ps, we find that the asymmetric longitudinal mode competition is well explained by the model of Bogatovetal. for the external cavity laser. The asymmetric mode competition can be understood on the basis of the pulsation of the electron population at the beat frequency between two longitudinal modes of ∼1012Hz. The long energy relaxation time may have relevance to the observed low characteristic temperature of the quaternary lasers.

ISSN:0003-6951    

DOI:10.1063/1.93176

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

A GaAlAs buried‐heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common‐emitter current gains for the phototransistor of 100–400 and light responsivity of 75 A/W (for wavelengths of 0.82 &mgr;m) at collector current levels of 15 mA were obtained.

ISSN:0003-6951    

DOI:10.1063/1.93177

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

An x‐ray interference pattern is observed for the first time by division of the wave front at one piece of a single crystal. The (220) reflection from a V‐shaped silicon crystal and a synchrotron radiation source are used. The crystal, acting simultaneously as a beam splitter, mirror, and analyzer, represents a novel single‐leaf x‐ray interferometer.

ISSN:0003-6951    

DOI:10.1063/1.93178

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

We report here the experimental observation of power‐independent linewidth broadening of cw single‐frequency (GaAl)As diode lasers. This phenomenon is attributed to refractive index fluctuations resulting from statistical fluctuations in the number of conduction electrons in the small active volume of the devices studied.

ISSN:0003-6951    

DOI:10.1063/1.93179

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Laser‐induced catastrophic degradation in InGaAsP layers has been investigated. Catastrophic dark line (CDL) defects are generated at the spontaneous radiation flux in excess of 100 MW/cm2, significantly higher than in similar GaAlAs structures. In contrast to CDL’s in GaAlAs these dark lines are shown to be due to localized melting at material defects and not at cleaved mirror facets. In view of the very high power threshold this type of catastrophic degradation should be of limited importance for the InGaAsP lasers.

ISSN:0003-6951    

DOI:10.1063/1.93180

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Individual bit channels of a 4‐bit guided‐wave electro‐optic analog‐to‐digital converter have been demonstrated at 276 and 828 megasamples per second. The converter consists of a mode‐locked Nd: yttrium aluminum garnet (YAG) laser for sampling, a LiNbO3Ti‐indiffused waveguide interferometric modulator array for conversion, a Ge avalanche photodiode (APD), and a special 1‐GHz Si integrated circuit for digital processing. Beat‐frequency tests with a 413‐MHz test signal, representing the highest frequency analog waveform converted, are reported.

ISSN:0003-6951    

DOI:10.1063/1.93181

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

A simple fabrication technique for GaInAsP/InP buried heterostructure lasers has been developed based on a newly observed mass transport phenomenon on chemically etched InP mesas. Threshold currents as low as 9.0 mA have been obtained.

ISSN:0003-6951    

DOI:10.1063/1.93182

出版商:AIP    

年代:1982

数据来源: AIP