摘要:

The effect of subsequent annealing treatment on electrical properties of aluminum‐implanted silicon was studied by means of Hall‐effect and sheet‐resistivity measurements. Implanted silicon samples were annealed under various schedules, for example, isochronal annealing for 20 min, isothermal annealing at 800°C, etc. A sign conversion of ``sheet Hall coefficient (RHS)'' in the implanted layer of ``over annealed'' sample was observed below room temperature. However, hot probe measurements on the same sample showed the existence ofp‐type layer, and the photo voltaic effect was also observed indicating thatp‐njunction existed.We have tentatively attempted to explain that these anomalous electrical properties were due to precipitation of implanted aluminum atoms along crystal imperfections.

ISSN:0003-6951    

DOI:10.1063/1.1652803

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

We report the first observation of tunable stimulated Raman emission. AQ‐switched ruby laser was used to excite theA1symmetry 248‐cm−1polariton mode in a LiNbO3crystal. The crystal, at room temperature, was placed in a resonator external to the laser cavity which was tuned to the Stokes frequency. It was possible to vary the Stokes frequency by altering the angle between the pump beam and the axis of the resonator. Stimulated Raman scattering from other polariton modes (152 cm−1, 628 cm−1) which are potentially tunable was observed. We also report the first observation of stimulated anti‐Stokes emission from a polariton mode.

ISSN:0003-6951    

DOI:10.1063/1.1652804

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Spontaneous self‐pulsing has been observed in a 10.6‐&mgr; CO2laser,Q‐switched in ≈10 nsec by an internal GaAs electro‐optic cell, with no saturable absorber present. EachQ‐switched event consists of a train of ten or more 20‐nsec pulses with a total duration of ≈400 nsec in a singleP(20) line. Electro‐optic dumping of the cavity energy near the peak of oscillation gives a single output pulse of ≈10‐kW peak power and 25‐nsec duration. A numerical comparison is made with the circulating &pgr; pulse theory of spontaneous pulsing.

ISSN:0003-6951    

DOI:10.1063/1.1652805

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The Si(111) 7 × 7 structure has been observed within 9 sec of cleaving Si crystals at 850°C. Analysis shows that sufficient Fe to be regarded as essential for the structure cannot diffuse from the bulk in the time, although Li or Cu could. Sufficient contamination to form 1% of a monolayer could form by surface diffusion from the crystal sides, provided surface diffusion coefficients considerably greater than 5 × 10−5cm2sec−1at 750°C were applicable.

ISSN:0003-6951    

DOI:10.1063/1.1652806

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Observation of the ideal single time constant generation‐recombination noise spectrum is achieved over four decades of frequency and five decades of noise power for the first time by completely depleting the electrons and holes in the semiconductor substrate with a high electric field. The measured time constant provides another accurate datum of the thermal emission rate of electrons and holes. By decreasing the applied electric field, nonideal power spectra result whose characteristic frequency increases due to the presence of electrons and holes in the silicon substrate.

ISSN:0003-6951    

DOI:10.1063/1.1652807

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

New high cw power and high‐efficiency operations of GaAs avalanche diodes operating in the normal mode are reported. An output power of 500 mW (cw) at 11.1 GHz with an efficiency over 11.5% was obtained from a zinc‐diffused GaAs diode. The diode was mounted junction side adjacent to the heat sink in a coaxial pin‐type microwave package (Micro State Type 8).

ISSN:0003-6951    

DOI:10.1063/1.1652808

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Hot metal filaments are often used to evaporate another metal for deposition of thin films. If the metal being evaporated can alloy with the filament, a significant number of high‐energy electrons are emitted during the alloying‐evaporation process.

ISSN:0003-6951    

DOI:10.1063/1.1652809

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The photoemission and thermionic emission from heat‐treated In0.3Ga0.7As coated with very thin layers of Cs and O have been measured. The photothreshold occurred at about the band gap of 0.95 eV and the thermionic work function was determined to be 0.7 ± 0.1 eV.

ISSN:0003-6951    

DOI:10.1063/1.1652810

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Heat cleaning in ultrahigh vacuum, when carried out properly on practical GaAs surfaces, has achieved very high quantum efficiency (∼600 &mgr;A/lumen) after activation with Cs and O2. This is better than 50% of the best UHV cleaved GaAs. The inherent limitations of heat cleaning are the possibilities of dopant out diffusion and loss of As. Our experiments are consistent with out diffusion of Zn at about 650°C, and a sufficiently small loss of As at this heating temperature so as to result in negligible As vacancies near the surface of the crystal

ISSN:0003-6951    

DOI:10.1063/1.1652812

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The application of an electric field of more than 3.2 kV/cm acrossn‐type GaAs results in the formation of high‐voltage approximately triangular domains which travel across the sample with a frequency determined by the length of the sample. A Ga71nuclear spin transition frequency was brought within the domain frequency bandwidth and an interaction between the domains and the nuclei was observed.

ISSN:0003-6951    

DOI:10.1063/1.1652813

出版商:AIP    

年代:1969

数据来源: AIP