1. |
Magnetoelastic Rayleigh wave convolver |
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Applied Physics Letters,
Volume 26,
Issue 3,
1975,
Page 73-74
William P. Robbins,
Mark S. Lundstrom,
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摘要:
An epoxy−bonded LiNbO3−YIG−LiNbO3composite structure has been constructed and operated as a magnetoelastic Rayleigh wave convolver with 50−MHz input signals. The acoustic signals were propagated on a (110) YIG surface and the convolution characteristics were studied as a function of the magnitude and direction of the applied magnetic field. Nonuniform demagnetizing fields limited convolution pulses to less than 1.5 &mgr;sec duration. Relatively efficient operation was observed corresponding to an internal efficiencyFintof −53 dBm.
ISSN:0003-6951
DOI:10.1063/1.88075
出版商:AIP
年代:1975
数据来源: AIP
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2. |
SiO2film overlays for temperature−stable surface acoustic wave devices |
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Applied Physics Letters,
Volume 26,
Issue 3,
1975,
Page 75-77
T. E. Parker,
M. B. Schulz,
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摘要:
Temperature−stable surface acoustic wave devices have been fabricated onYZ LiNbO3andYZ LiTaO3by the use of SiO2film overlays. On LiNbO3, a temperature dependence similar to that ofST−cut quartz was obtained, but with a coupling constantk2of at least 5.4%. On LiTaO3, a second−order temperature coefficient of delay that is 5 times smaller than and opposite in sign to that ofSTquartz was observed. The coupling constant was measured to be approximately 1.6%.
ISSN:0003-6951
DOI:10.1063/1.88076
出版商:AIP
年代:1975
数据来源: AIP
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3. |
Redistribution of boron in silicon after high−temperature proton irradiation |
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Applied Physics Letters,
Volume 26,
Issue 3,
1975,
Page 77-80
Pierre Baruch,
Joel Monnier,
Bruno Blanchard,
Claude Castaing,
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摘要:
We have measured the distribution of boron in silicon, using secondary ion mass spectroscopy or nuclear reactions, after irradiation at 850°C by protons of energy 250−450 keV. The fluence was 1×1017to 6×1017protons/cm2. Prediffused and uniformly doped samples have been studied. It is found that the boron distribution is considerably modified: the boron concentration shows a peak near the end of the proton range, where the defect creation rate is highest. This anomaly cannot be explained by using solely simple diffusion theory, and depends on boron−defect interactions, such as the formation of precipitates or complexes. As a consequence, the interpretations of radiation−enhanced diffusion experiments must be discussed again.
ISSN:0003-6951
DOI:10.1063/1.88077
出版商:AIP
年代:1975
数据来源: AIP
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4. |
Negative resistance in ion−implanted Al−Al2O3−Au junctions |
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Applied Physics Letters,
Volume 26,
Issue 3,
1975,
Page 80-82
Mikio Hirano,
Shinya Kuriki,
Goro Matsumoto,
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摘要:
Conduction has been investigated in Al−Al2O3−Au sandwiches whose oxide is implanted with O or Al ions. The results reveal that ion implantation gives a junction type which can be electroformed, and which exhibits negative resistance in air at atmospheric pressure.
ISSN:0003-6951
DOI:10.1063/1.88078
出版商:AIP
年代:1975
数据来源: AIP
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5. |
C−Vanalysis of a partially depleted semiconducting channel |
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Applied Physics Letters,
Volume 26,
Issue 3,
1975,
Page 82-84
Kurt Lehovec,
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摘要:
C−Vanalysis applied to a depletion layer bordering a semiconducting channel does not provide the true impurity distribution if the space−charge region penetrates to another depletion layer at the other side of the channel, i.e., if the channel is partially depleted. Cases in point are an epitaxial semiconducting channel on a semi−insulating chromium−doped gallium arsenide substrate; ann−channel on ap−substrate; and a heterojunction of a semiconducting epitaxial layer on an insulating substrate with interface states causing depletion.
ISSN:0003-6951
DOI:10.1063/1.88088
出版商:AIP
年代:1975
数据来源: AIP
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6. |
Heterojunction formation using amorphous materials |
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Applied Physics Letters,
Volume 26,
Issue 3,
1975,
Page 85-86
B. Dunn,
J. D. Mackenzie,
J. K. Clifton,
J. V. Masi,
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摘要:
Heterojunctions have been fabricated by depositing glass films onto single−crystal silicon substrates. Junction behavior has been exhibited regardless of the electrical or chemical properties of the glass film. The observed characteristics are a function of these properties. Current rectification, variable capacitance, sharp reverse breakdown, and photovoltaic responses have been observed.
ISSN:0003-6951
DOI:10.1063/1.88089
出版商:AIP
年代:1975
数据来源: AIP
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7. |
Resonance self−absorption in CO lasers |
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Applied Physics Letters,
Volume 26,
Issue 3,
1975,
Page 86-89
W. B. Lacina,
G. L. McAllister,
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摘要:
Resonance self−absorption from overlapping lines in a CO laser medium may be an important pressure−dependent mechanism for theoretical analysis, with possible impact on line selection and atmospheric propagation. Certain presently unexplained discrepancies relating to transient time scale, spectral anomalies, efficiency degradation, and sensitivity to temperature might all be consistently resolved by this hypothesis.
ISSN:0003-6951
DOI:10.1063/1.88090
出版商:AIP
年代:1975
数据来源: AIP
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8. |
Energy velocity and effective gain in distributed−feedback lasers |
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Applied Physics Letters,
Volume 26,
Issue 3,
1975,
Page 89-91
Shyh Wang,
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摘要:
Here, we establish a relationG=gv/vEbetween the effective gain coefficientGin a periodic medium (for a Bloch wave) and the ordinary gain coefficientgin a corresponding uniform medium (for an ordinary plane wave). In distributed−feedback (DFB) lasers,Gis greater (or smaller) thangbecause the energy velocityvEof a Bloch wave is smaller (or greater) than the phase velocityvof a plane wave. The relation betweenGandgcan be regarded as a first principle for DFB lasers. We can use this principle to test the validity of a DFB−laser theory and to guide us to a correct interpretation of the theoretic result.
ISSN:0003-6951
DOI:10.1063/1.88091
出版商:AIP
年代:1975
数据来源: AIP
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9. |
Picosecond response of a high−repetition−rate CS2optical Kerr gate |
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Applied Physics Letters,
Volume 26,
Issue 3,
1975,
Page 92-93
E. P. Ippen,
C. V. Shank,
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摘要:
An optical Kerr gate is operated at high repetition rates using picosecond pulses from a mode−locked cw laser. A new mode of gate operation is demonstrated in which incremental transmission is linearly proportional to pump power. Direct temporal measurement of a 2.1−psec response time of the optical Kerr effect in CS2is reported.
ISSN:0003-6951
DOI:10.1063/1.88092
出版商:AIP
年代:1975
数据来源: AIP
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10. |
Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices |
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Applied Physics Letters,
Volume 26,
Issue 3,
1975,
Page 94-96
P. C. Arnett,
B. H. Yun,
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摘要:
Previous charge−centroid studies of MNOS devices have shown that electrons injected into the insulator structure from the silicon are trapped not solely at the dielectric interface, but can be distributed over nearly the entire nitride thickness. In this paper, results of charge−centroid measurements on thin−oxide MNOS devices are interpreted with a charge trapping model, leading to values for the nitride trap density, capture cross section, and average trapping distance of 6×1018/cm3, 5×10−13cm2, and 35 A˚, respectively.
ISSN:0003-6951
DOI:10.1063/1.88093
出版商:AIP
年代:1975
数据来源: AIP
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