1. |
Development of a formed‐ferrite flash plasma light source for gas laser applications |
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Applied Physics Letters,
Volume 50,
Issue 11,
1987,
Page 629-631
K. Watanabe,
S. Kashiwabara,
R. Fujimoto,
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摘要:
A new type of plasma light source using amorphous filaments formed on ferrite substrates has been developed for application to gas laser excitation and preionization. A formed filament acts as a leading guide to produce a long‐distance, high‐current discharge plasma which emits hard ultraviolet photons. The plasma production mechanism and technological advantages over conventional ways of producing plasmas of the formed‐ferrite flash are described.
ISSN:0003-6951
DOI:10.1063/1.98102
出版商:AIP
年代:1987
数据来源: AIP
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2. |
Coupled stripe AlxGa1−xAs‐GaAs quantum well lasers defined by impurity‐induced (Si) layer disordering |
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Applied Physics Letters,
Volume 50,
Issue 11,
1987,
Page 632-634
D. G. Deppe,
G. S. Jackson,
N. Holonyak,
R. D. Burnham,
R. L. Thornton,
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摘要:
A high‐performance index‐guided ten‐stripe AlxGa1−xAs‐GaAs quantum well heterostructure laser array fabricated using Si diffusion to effect impurity‐induced layer disordering between the active region stripes is described. The fine spacing (1 &mgr;m) between (3 &mgr;m) emitters allows coupled mode laser operation at thresholds (Ith) as low as 3–4 mA per stripe and with stable near‐ and far‐field patterns in spite of band filling (single quantum well). This form of coupled stripe laser is capable of high efficiency and high power output (250 mW at 300 mA) as well as a large excitation range extending fromIthto 9Ith.
ISSN:0003-6951
DOI:10.1063/1.98103
出版商:AIP
年代:1987
数据来源: AIP
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3. |
GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition |
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Applied Physics Letters,
Volume 50,
Issue 11,
1987,
Page 635-637
D. Fekete,
D. Bour,
J. M. Ballantyne,
L. F. Eastman,
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摘要:
A self‐aligned GaAs/GaAlAs tapered laser with a tapered quantum well active region is described. The laser is grown by low pressure metalorganic chemical vapor deposition in a horizontal reactor. The effect of the tapered quantum well is in concentrating the injected charges in the modal volume and thus 6.2 mA threshold current is obtained. At a high power level the laser operates in single longitudinal and transversal modes.
ISSN:0003-6951
DOI:10.1063/1.98104
出版商:AIP
年代:1987
数据来源: AIP
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4. |
Dual laser diode array emission coherently summed in an external cavity |
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Applied Physics Letters,
Volume 50,
Issue 11,
1987,
Page 638-640
Hamid Hemmati,
James B. Abshire,
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摘要:
The output power from two ten‐element laser diodes arrays has been efficiently summed in an external cavity to obtain a coherent, continuous wave beam. In this technique, laser emission from each front surface antireflection coated diode array is stimulated by injection of emission from a second such array. This method was also applied to single‐element diode lasers. The output beam characteristics such as spectral distribution, far‐field and near‐field beam patterns, and overall efficiency have been measured.
ISSN:0003-6951
DOI:10.1063/1.98105
出版商:AIP
年代:1987
数据来源: AIP
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5. |
Light evolution in alkaline‐earth‐sulfide thin‐film ac electroluminescent devices |
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Applied Physics Letters,
Volume 50,
Issue 11,
1987,
Page 641-643
Richard S. Crandall,
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摘要:
Results of an extensive survey of the time evolution of the light output of thin‐film ac electroluminescent devices fabricated from alkaline‐earth‐sulfide phosphors with different activators are presented. Light output increases slowly until a steady state, which depends on voltage and drive frequency, is reached. It is shown that the slow evolution is due to tunneling of electrons from deep states and eventual trapping of these electrons in shallow states. The dynamics of the device is determined by the supply of electrons.
ISSN:0003-6951
DOI:10.1063/1.98106
出版商:AIP
年代:1987
数据来源: AIP
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6. |
Integrated external cavity distributed Bragg reflector laser |
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Applied Physics Letters,
Volume 50,
Issue 11,
1987,
Page 644-646
N. K. Dutta,
T. Cella,
J. L. Zilko,
A. B. Piccirilli,
R. L. Brown,
S. G. Napholtz,
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摘要:
The fabrication and performance characteristics of single frequency integrated external cavity distributed Bragg reflector lasers are described. The current is confined to the active region of these lasers using semi‐insulating Fe‐doped InP layers. The semi‐insulating layer also provides lateral index guiding to the lasing optical mode both in the active and the passive cavity sections. The lasers emit near 1.52 &mgr;m. The threshold currents of these lasers are in the range 70–120 mA. dc linewidth of 2.2 MHz has been obtained for a 5‐mm‐long laser at an output power of 6 mW. Lasers with longer external cavity and higher mode coupling between the active and the passive cavity sections should exhibit lower dc linewidth.
ISSN:0003-6951
DOI:10.1063/1.98107
出版商:AIP
年代:1987
数据来源: AIP
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7. |
Phase conjugate master oscillator‐power amplifier using BaTiO3and AlGaAs semiconductor diode lasers |
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Applied Physics Letters,
Volume 50,
Issue 11,
1987,
Page 647-649
R. R. Stephens,
R. C. Lind,
C. R. Giuliano,
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摘要:
A double pass phase conjugate master oscillator‐power amplifier has been demonstrated at 820 nm using AlGaAs gain elements and BaTiO3in a self‐pumped ring configuration. Single frequency operation with diffraction‐limited output beam quality was achieved at output powers in excess of 50 mW cw.
ISSN:0003-6951
DOI:10.1063/1.98108
出版商:AIP
年代:1987
数据来源: AIP
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8. |
Theoretical study of a nonlinear prism output coupler |
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Applied Physics Letters,
Volume 50,
Issue 11,
1987,
Page 650-652
P. Arlot,
G. Vitrant,
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摘要:
We study a nonlinear output coupler. The nonlinear medium is the substrate which exhibits Kerr effect. New effects are predicted, which have no equivalent in the linear case: nonexponential decay of the guided field, increase of the intensity of the output radiated field, variation of the output angle along the waveguide, strong modification of the output beam intensity distribution.
ISSN:0003-6951
DOI:10.1063/1.98109
出版商:AIP
年代:1987
数据来源: AIP
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9. |
Universal relationship between resonant frequency and damping rate of 1.3 &mgr;m InGaAsP semiconductor lasers |
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Applied Physics Letters,
Volume 50,
Issue 11,
1987,
Page 653-655
R. Olshansky,
P. Hill,
V. Lanzisera,
W. Powazinik,
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摘要:
Analysis of the measured frequency response of 1.3 &mgr;m InGaAsP vapor phase regrown buried heterostructure lasers shows that there is a universal linear relationship between damping rate and resonant frequency squared with a proportionality factor of 0.32×10−9s. This result can be explained by the intraband relaxation model of nonlinear gain.
ISSN:0003-6951
DOI:10.1063/1.98110
出版商:AIP
年代:1987
数据来源: AIP
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10. |
3‐ps compressed pulses from a mode‐locked Kr+laser |
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Applied Physics Letters,
Volume 50,
Issue 11,
1987,
Page 656-658
B. Valk,
K. Vilhelmsson,
M. M. Salour,
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摘要:
We report on 33× compression of 100‐ps mode‐locked Kr+laser pulses at 647.1 nm by using a fiber‐grating‐pair compressor. Pulses with very low wings have been achieved by making use of the nonlinear birefringence effect leading to an intensity‐dependent state of polarization. The discrimination of the wings took place in the grating compressor which acted as a polarizer.
ISSN:0003-6951
DOI:10.1063/1.98111
出版商:AIP
年代:1987
数据来源: AIP
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