摘要:

Two new effects have been observed in the transport properties of In‐doped HgCr2Se4at ferromagnetic resonance at 77°K. One is a dc voltage produced in the sample, and the other is a decrease in resistivity. These effects are believed to result froms‐dexchange interactions.

ISSN:0003-6951    

DOI:10.1063/1.1653231

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

The effects of ionizing radiation in large geometry MOS structures were studied by use of internal photoemission techniques. Barrier heights at both the silicon‐silicon dioxide and the silicon dioxide‐metal (chromium) interface were measured before and after irradiation in a Co60gamma cell. It was determined that the measured barrier energy heights were considerably reduced by radiation‐induced oxide charge.

ISSN:0003-6951    

DOI:10.1063/1.1653240

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Not every xenon ion ofE< 50 keV produces a defect cluster visible by transmission electron microscopy. The recently reported larger yields in heavy ion bombardment of gold are probably due to the additional damage produced by neutral particles. AtE> 50 keV a one‐to‐one correspondence between number of incident ions and defect bunches is observed.

ISSN:0003-6951    

DOI:10.1063/1.1653249

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

It is shown that the dependence of the output of a whisker diode on its orientation in the polarized beam of an infrared laser can be explained on the basis of simple long‐wire antenna theory. Outstanding improvements in coupling the diode to the radiation field can result when this fact is utilized in applications.

ISSN:0003-6951    

DOI:10.1063/1.1653250

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Population densities and lifetimes have been obtained for the 5p2P1/2,3/2, 5s22D3/2,5/2, and 6s2S1/2levels of Cd II in a typical helium‐cadmium laser discharge. These results show that there is no population inversion for the lines at 3536, 2749, and 2573 Å, previously thought to be possible laser transitions. The maximum available laser power is also estimated from these results for the cw laser transitions at 4416 and 3250 Å.

ISSN:0003-6951    

DOI:10.1063/1.1653232

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

A direct measurement using time‐resolved spectroscopy with response times in the picosecond regime shows that wave groups of different frequencies within an ultrashort pulse generated by a Nd‐glass mode‐locked laser arrive at a given point at different times. A curve depicting wavelength versus arrival time for a typical pulse is constructed. The frequency sweep is nonlinear and positive across the most intense portion of the spectrum.

ISSN:0003-6951    

DOI:10.1063/1.1653233

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Measurements of the energy dependence of surface‐state density, capture cross section, and frequency dispersion were undertaken with the MOS conductance technique. Capture cross sections are constant in the depletion range and decrease exponentially towards the band edge. The frequency dispersion factor is independent of surface potential for wet oxide and becomes very small at the flatband point for dry oxides.

ISSN:0003-6951    

DOI:10.1063/1.1653234

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Ion implantation of indium in silicon has been studied at 30 keV both in random and in channeling conditions. Implantations were performed at room temperature with doses ranging from 1×1012to 1×1015ions/cm2; surface carrier concentration versus anneal temperature curves were obtained and compared with the behavior of other group III elements. The anneal behavior of the above‐mentioned implants after anneal at 700°C and subsequent tin implantation is also discussed.

ISSN:0003-6951    

DOI:10.1063/1.1653235

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

The channeling and guidance of an electrical breakdown streamer via a laser‐induced ionization trail is discussed, and preliminary experiments demonstrating this phenomenon are reported.

ISSN:0003-6951    

DOI:10.1063/1.1653236

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

By bombarding samples with 1.1‐MeV4He+ions and observing the energy spectra of the backscattered ions, it has been possible to determine the concentrations and lattice locations of arsenic and antimony impurities diffused into silicon. For the samples investigated it was found that only 60–75% of the arsenic atoms were in substitutional sites, even at impurity concentrations well below solid solubility. About 90% of the antimony atoms were found to be in substitutional sites.

ISSN:0003-6951    

DOI:10.1063/1.1653237

出版商:AIP    

年代:1970

数据来源: AIP