摘要:

Evidence for the existence of transverse waves in detonating liquid explosives is presented. The technique utilized is analogous to the smoked‐foil technique used in gaseous detonation studies.

ISSN:0003-6951    

DOI:10.1063/1.1652964

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The dielectric polarization theory for ionic conduction at high fields is shown to predict adecreasein the measured ac film capacitance for anincreasein the dc ion current, contrary to the assertion of Dell'Oca and Young.

ISSN:0003-6951    

DOI:10.1063/1.1652965

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

A totally localized solution of the wave equation in a nonlinear dielectric is discussed. The spatial region in which the field is concentrated has the shape of a torus. The solution is never completely stable, but under suitable conditions the lifetime of the trapped radiation can be extremely long.

ISSN:0003-6951    

DOI:10.1063/1.1652966

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

A hologram is made by a CO2&sngbnd;N2&sngbnd;He laser utilizing the thermal bleaching of organic photochromic films and is reconstructed by a 6328 Å He&sngbnd;Ne laser beam. These films are made of photochromic spiropirans dissolved into plastics.

ISSN:0003-6951    

DOI:10.1063/1.1652967

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The frequency pulling and locking of intensity pulsations from continuously operating GaAs injection lasers have been studied by varying the frequency of the externally applied locking signal in the vicinity of the self‐induced pulse rate or one of its harmonics. The ability of the laser pulse rate to follow a rapidly varying locking signal has led to the first realization of optical pulse position modulation with microwave repetition rates. Modulation rates attainable with this effect are expected to be as high as one‐half the self‐induced pulse rate.

ISSN:0003-6951    

DOI:10.1063/1.1652968

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The lattice disorder produced by 40 keV boron ions in Si at implant temperatures of −120 and 23°C has been measured by means of the channeling technique for a 140‐keV proton beam. At −120° there are ∼ 650 displaced Si atoms per incident boron ion for random and ⟨111⟩ aligned implants, respectively. In contrast to the mild dependence noted earlier for Sb implants, there is a marked dependence of residual lattice disorder upon implant temperature for boron implants in this temerature range. Hall effect measurements on the implanted layers indicate that, in the dose range for boron investigated here, the electrical yield (number of acceptors per implanted ion) after a 600°C anneal increases with the amount of disorder contained in the implanted layer, with the greatest yield occurring in implants containing a fully amorphous layer. The major effect of implant temperature is to determine the amount of residual disorder.

ISSN:0003-6951    

DOI:10.1063/1.1652969

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

The first EPR measurements of the identity of defects in an ion‐implanted layer (< 15 000 Å) are reported. The Si&sngbnd;P3 center is the dominant paramagnetic defect produced at room temperature by 400‐keV O+implantation in Al‐ and B‐doped Lopex Si, and it anneals below 200°C. The Si&sngbnd;P1 center is the dominant defect remaining above 200°C, and it anneals near 350°C. Interstitial Al++(Si&sngbnd;G18) are observed in the Al‐doped sample; their number indicate that Si interstitials do not migrate over large distances into the unirradiated Si. Comparison of EPR and infrared data indicates that the Si divacancy is produced in the diamagnetic neutral charge state.

ISSN:0003-6951    

DOI:10.1063/1.1652970

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Single‐crystal Sr0.75Ba0.25Nb2O6when used in conjunction with an externally applied electric field is shown to be a sensitive volume holographic medium capable of high‐resolution information storage. Optically induced refractive index changes of 5 × 10−4have been observed with laser exposure of 14 J/cm2. A simple relation between the applied electric field and optical exposure is determined which allows electrical control of optically induced refractive index change. In addition to control of the optically induced effect it is found that the applied electric field can also be used to control the diffraction efficiency of the holographic reconstruction process.

ISSN:0003-6951    

DOI:10.1063/1.1652971

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

Lamellar eutectic InSb + Sb films were grown by electron beam microzone crystallization. The Sb lamellae within the InSb matrix constitute a grating which acts as an infrared polarizer beyond the InSb absorption edge. The spectral dispersion of the transmittance of such polarizers between 2 and 20 &mgr;m in wavelength with the electric vector of the incident radiation oriented parallel and perpendicular to the axes of the lamellae is qualitatively consistent with theoretical expectations.

ISSN:0003-6951    

DOI:10.1063/1.1652972

出版商:AIP    

年代:1969

数据来源: AIP

摘要:

On focusing a laser beam on transparent materials, we have observed luminous channels within the media, which we attribute to two effects. The beam is first self‐focused because of nonlinearity of the material, and breakdown occurs. A second self‐focusing effect is then possible in the plasma so produced. Divergence of the beam is prevented, and further heating occurs.

ISSN:0003-6951    

DOI:10.1063/1.1652973

出版商:AIP    

年代:1969

数据来源: AIP