摘要:

The facet temperature of AlGaAs ridge waveguided single‐quantum‐well lasers with various ridge widths and cavity lengths were measured as a function of output power and injection current using Raman microprobe spectroscopy. The facet temperature was found to scale with the injection current density rather than the photon flux. In addition, no large discontinuities were found below and above the lasing threshold, suggesting that the absorption of the emitted photons plays only a minor role in the facet heating. These data imply that the facet heating during the initial slow degradation regime is due to the surface nonradiative recombination of carriers and is primarily determined by the injection current density. This could be contrasted to the catastrophic optical damage regime where the lasing photons play a key role in the heating process.

ISSN:0003-6951    

DOI:10.1063/1.106326

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

The use of all‐gaseous doping during chemical‐beam epitaxy (CBE) offers several important advantages. Injection of dopants, together with the metalorganic group‐III beam, automatically leads to uniform dopant distribution across the entire wafer. Vapor dopant sources also ensure long‐term stability and reproducibility. It also allows for instant doping profile control. Most important of all, an all‐gaseous doping CBE system is particularly attractive for system manufacture and device production applications. We investigatedn‐ andp‐type dopings in InP and InGaAs during CBE using tetraethyltin (TESn) and diethylzinc (DEZn), respectively, and confirmed their suitability for use in growing high‐quality long‐wavelength InGaAs(P)/InGaAsP semiconductor injection lasers. Buried heterostructure lasers fabricated from CBE‐grown 1.5‐&mgr;m six quantum‐well base wafers and metalorganic vapor‐phase‐epitaxy regrown iron‐doped InP have excellent current‐voltage characteristics and threshold currents as low as 8 mA. cw operation with threshold current as low as 23 mA at 80 °C and output power of ∼10 mW was achieved for diodes having one facet ∼85% reflective coated.

ISSN:0003-6951    

DOI:10.1063/1.106327

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Monolithically integrated dielectric reflectors have opened up a new field of optoelectronic devices. Vertical cavity lasers in the AlGaAs system are grown by MBE almost as a matter of routine. In this contribution dielectric reflectors composed of InAlAs and InGaAlAs lattice matched to InP are investigated. We achieve reflectivities of 70%, 83%, and 96% using 5, 10, and 20 periods of quarter wavelength layers. Increasing the number to 30 periods results in a maximum reflectivity exceeding 99% at a center wavelength of 1.65 &mgr;m. These experimental results indicate that vertical cavity lasers for optical communication systems in the InGaAlAs system are feasible.

ISSN:0003-6951    

DOI:10.1063/1.106328

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We have determined the depth of ion implant damage in semiconductor materials by nonlinear optical measurements. The carrier lifetime in ion‐implanted mesas was measured by the pump‐probe technique, and the carrier diffusion coefficient in unetched material was measured by degenerate four‐wave mixing. An effective depth of damage within which the carriers experience fast recombination is then determined by modeling of the carrier dynamics in the mesa structure.

ISSN:0003-6951    

DOI:10.1063/1.106329

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

We investigated the response characteristics of two bistable elements optically connected in series, i.e., vertically integrated self‐electro‐optic effect devices. The experimental results demonstrated that a variety of the multistable responses are obtained by controlling the electrical parameters. The composite characteristics of the two‐tier system can be clearly predicted and interpreted in terms of the overlap of three bistable regions.

ISSN:0003-6951    

DOI:10.1063/1.106330

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Enhanced diffraction efficiency of arbitrary higher order by using a thermoplastic plate is described. Such an enhanced diffraction efficiency is obtained by adjusting the angle between the two recording beams so that the diffraction angle of the desired order is tuned to the angle at which a thermoplastic plate gives the maximum frequency response and optimizing the exposure time. Using this method, any order can be selectively enhanced with the diffraction efficiency comparable to that of maximum attainable first order. Also, competition between different orders are sensitively affected as the tuning angle varies.

ISSN:0003-6951    

DOI:10.1063/1.106331

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

While a variety of light‐detecting devices have been made with HgCdTe, little has been done to apply this technology to light‐emitting devices. We report here the successful fabrication and operation of the first HgCdTe injection laser. This stripe‐geometry double‐heterostructure laser was operated under pulsed current at temperatures between 40 and 90 K. At 77 K, the emission wavelength was 2.86 &mgr;m with a linewidth of 0.3 meV, and the pulsed threshold current density was 625 A/cm2. The double heterostructure, with a 1.4‐&mgr;m‐thick active layer, was grown andinsitudoped by molecular beam epitaxy (MBE). Thep+andn+confinement layers were doped with arsenic and indium, respectively.

ISSN:0003-6951    

DOI:10.1063/1.106332

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Blue shift of the heavy‐hole peak of the photocurrent spectra has been observed, for the first time, in narrow GaAs/Al0.4Ga0.6As asymmetric coupled quantum wells near the heavy‐hole resonance. With an external reverse bias of only −2.35 V, a maximum upward shift of the apparent peak position of ∼6.1 meV has been measured at 78 K. Sharp change of the inhomogeneous linewidth of the heavy‐hole peak has also been observed. cw optical bistability has been observed with the external feedback.

ISSN:0003-6951    

DOI:10.1063/1.106333

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

Vacuum UV fluorescences from ionic rare‐gas alkali excimer molecules were observed by electron beam excitation. A gas mixture of xenon or krypton with a hot vapor of rubidium was excited to obtain a diffuse emission band centered at 164 nm from (XeRb)+and 133 nm from (KrRb)+molecular ions. The observed emission bands are assigned to the 21&Sgr;+→11&Sgr;+transition of (XeRb)+and (KrRb)+, respectively.

ISSN:0003-6951    

DOI:10.1063/1.106334

出版商:AIP    

年代:1991

数据来源: AIP

摘要:

A new semiconductor waveguide absorption modulator is demonstrated utilizing the heterostructure field‐effect transistor structure. The modulator of 300 &mgr;m length and 10 &mgr;m width achieves an extinction ratio of 8 for a gate voltage change of 2.5 V and an absorption change greater than 2300 cm−1. The transistor transconductance is 92 ms/mm for a 1 &mgr;m device and an identical structure has been reported as an edge‐emitting laser providing an ideal combination for optoeletronic integration.

ISSN:0003-6951    

DOI:10.1063/1.106335

出版商:AIP    

年代:1991

数据来源: AIP