摘要:

Reflection and transmission secondary emission ratios have been measured for a thin Si sample with one surface activated to a state of negative electron affinity. Reflection‐mode gains of 950 were observed at 20‐keV primary energy. The highest transmission secondary emission ratio was 725 at 20‐keV primary energy. The high secondary emission gains result from the effective negative electron affinity at the surface of the sample together with a long escape depth for internal secondaries.

ISSN:0003-6951    

DOI:10.1063/1.1653414

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Na, Li, and Ne have been implanted into CdS in order both to study the luminescence and to attempt to achieve type conversion. Acceptor luminescence, due to the alkali impurities, has been produced with significant intensity, but type conversion has not been observed. The luminescence efficiency and the induced emission intensity as a function of annealing temperature have been obtained.

ISSN:0003-6951    

DOI:10.1063/1.1653415

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

The proton spin‐lattice relaxation timeT1ofp‐methoxybenzilidene‐p′‐cyanoanaline has been studied as a function of molecular alignment in a dc electric field. The experimental results clearly show a large anisotropy inT1for the benzene‐ring protons as well as an isotropic spin‐lattice relaxation time associated with the remaining protons. These results are in agreement with the most recent theoretical descriptions.

ISSN:0003-6951    

DOI:10.1063/1.1653416

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Measurements of electrical conductivity as a function of electric field were used to obtain electron‐energy relaxation times &tgr;&egr;inn‐InSb with 1014carriers/cm3in the temperature range from 5 to 34 K. Comparison of results with theoretical predictions demonstrated that the usual mechanisms involving single‐phonon interactions cannot adequately describe &tgr;&egr;, especially in the range between 12 and 34 K. The data are highly suggestive of a two‐phonon process involving the emission of a 0.0223‐eV transverse optical phonon and absorption of a 0.0054‐eV transverse acoustic phonon.

ISSN:0003-6951    

DOI:10.1063/1.1653418

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

The effects of implantation of argon on the optical properties of GaP films and bulk have been investigated for doses of 1013to 1015/cm2and energies between 1.5 and 3 MeV. Implantation of ordered films and bulk GaP results in a marked change in the optical absorption edge from about 2.3 eV to less than 1.0 eV, similar to behavior observed for amorphous films and for those subject to neutron irradiation. A maximum value of 3.22 has been observed for the index of refraction of implanted films as compared with 3.06 for bulk or highly ordered films. Bulk optical behavior can be recovered for implanted GaP with annealing at temperatures below 600°C.

ISSN:0003-6951    

DOI:10.1063/1.1653419

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

A rotating dynamic capacitor is used to measure the contact potential difference between a gold reference electrode and &lgr; gold film during the nucleation of a silver overlayer. An interpretation of the resulting graphs is given and the curves are fitted to an exponential relationship between the mean overlayer thickness and the percentage area covered. These results are compared with results for a gold overlayer on silver film.

ISSN:0003-6951    

DOI:10.1063/1.1653420

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Techniques have been developed using argon ion milling to produce high‐density microstructure arrays of permalloy magnetic dipoles for use in magnetic bubble devices. Ion milling is used to replace the chemical etch process in the usual photolithographic method, which results in an order‐of‐magnitude improvement in density. A 1000‐bit I and bar shift register has been made in which the spacing between elements in 7.5&mgr;, and the width of the elements are ∼ 1&mgr;. The entire structure is 0.25 mm (or 10 mil) square.

ISSN:0003-6951    

DOI:10.1063/1.1653421

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

Backscattering of MeV4He ions has been used to analyze the Ga and As content in SiO2and Si3N4dielectric layers deposited on single‐crystal GaAs substrates. Changes in impurity concentrations and distributions are seen after isothermal annealing at both 750 and 800°C. Evidence for Ga outdiffusion is clear.

ISSN:0003-6951    

DOI:10.1063/1.1653422

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

A model of a dye laser electronically tuned by an acousto‐optic filter is analyzed. Chirping modes are superposed to yield a steady‐state periodic solution which predicts a shift of the spectrum to the high end of the filter band and appreciable spectral narrowing. For the example considered, the theory predicts a narrowing factor of 100.

ISSN:0003-6951    

DOI:10.1063/1.1653423

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

An investigation has been made on variations in radiation‐induced conductivity of two different types of CdS single crystals near liquid‐nitrogen temperature during 5‐MeV electron irradiation. The conductivity of a high‐conductivity crystal is decreased and that of a low‐conductivity crystal is increased with irradiation. Both conductivities come nearer to each other and seem to approach a limiting value as irradiation is continued. Two possible interpretations for the experimental result are also presented.

ISSN:0003-6951    

DOI:10.1063/1.1653424

出版商:AIP    

年代:1970

数据来源: AIP