1. |
Comparison of guided‐wave interferometric modulators fabricated on LiNbO3via Ti indiffusion and proton exchange |
|
Applied Physics Letters,
Volume 43,
Issue 2,
1983,
Page 131-133
R. A. Becker,
Preview
|
PDF (238KB)
|
|
摘要:
Guided‐wave electro‐optic Mach–Zehnder interferometric modulators have been fabricated on LiNbO3. The channel waveguides were formed by titanium indiffusion in some devices and proton exchange in benzoic acid in others. The modulators were tested at 0.85‐&mgr;m and/or 1.3‐&mgr;m wavelengths for insertion loss, electro‐optic activity, and susceptibility to optical damage. A substantial reduction in the electro‐optic activity accompanied by a reduced susceptibility to optical damage is measured for the proton‐exchanged modulators.
ISSN:0003-6951
DOI:10.1063/1.94280
出版商:AIP
年代:1983
数据来源: AIP
|
2. |
Measurement of carrier and lattice heating in 1.3‐&mgr;m InGaAsP light‐emitting diodes |
|
Applied Physics Letters,
Volume 43,
Issue 2,
1983,
Page 134-135
J. Manning,
R. Olshansky,
C. B. Su,
W. Powazinik,
Preview
|
PDF (149KB)
|
|
摘要:
The hot‐carrier effects reported for InGaAsP light‐emitting diodes are shown to result primarily from lattice heating. The small amount of heating observed at currents corresponding to typical threshold current density has negligible effect on the characteristic temperatureT0measured for InGaAsP lasers under pulsed conditions.
ISSN:0003-6951
DOI:10.1063/1.94281
出版商:AIP
年代:1983
数据来源: AIP
|
3. |
Phase‐locked InGaAsP laser array with diffraction coupling |
|
Applied Physics Letters,
Volume 43,
Issue 2,
1983,
Page 136-137
T. R. Chen,
K. L. Yu,
B. Chang,
A. Hasson,
S. Margalit,
A. Yariv,
Preview
|
PDF (157KB)
|
|
摘要:
A phase‐locked array of InGaAsP lasers has been fabricated for the first time. This 50‐&mgr;m‐wide array utilized diffraction coupling between adjacent lasers to achieve phase locking. Threshold current as low as 200 mA is obtained for arrays with 250‐&mgr;m cavity length. Smooth single‐lobe far‐field patterns with beam divergence as narrow as 3° have been achieved.
ISSN:0003-6951
DOI:10.1063/1.94282
出版商:AIP
年代:1983
数据来源: AIP
|
4. |
Reliability of constricted double‐heterojunction AlGaAs diode lasers |
|
Applied Physics Letters,
Volume 43,
Issue 2,
1983,
Page 137-139
D. Botez,
J. C. Connolly,
M. Ettenberg,
D. B. Gilbert,
J. J. Hughes,
Preview
|
PDF (203KB)
|
|
摘要:
Constricted double‐heterojunction diode lasers have been life tested at 70 °C heatsink temperature and 3–4 mW/facet in cw operation. A median life of 7800 h is obtained at 70 °C, which extrapolates to 4×105h median life at room temperature. The extrapolated mean time to failure at room temperature is in excess of 106h. Single‐longitudinal‐mode cw operation is maintained after 10 000 h of accelerated aging at 70 °C.
ISSN:0003-6951
DOI:10.1063/1.94283
出版商:AIP
年代:1983
数据来源: AIP
|
5. |
Occupation fluctuation noise: A fundamental source of linewidth broadening in semiconductor lasers |
|
Applied Physics Letters,
Volume 43,
Issue 2,
1983,
Page 140-142
Kerry Vahala,
Amnon Yariv,
Preview
|
PDF (229KB)
|
|
摘要:
In this letter we consider the effect of fast thermal fluctuations of electronic state occupancy on the field spectrum of semiconductor lasers and derive for the first time an expression for the resulting power independent linewidth contribution. The magnitude and temperature dependence of this linewidth component agree reasonably well with measurements of a power independent linewidth made by Welford and Mooradian.
ISSN:0003-6951
DOI:10.1063/1.94260
出版商:AIP
年代:1983
数据来源: AIP
|
6. |
Supersonic‐nitrogen flow‐field measurements with the resonant Doppler velocimeter |
|
Applied Physics Letters,
Volume 43,
Issue 2,
1983,
Page 143-145
S. Cheng,
M. Zimmermann,
R. B. Miles,
Preview
|
PDF (247KB)
|
|
摘要:
Laser‐induced fluorescence of sodium atoms seeded into a supersonic nitrogen jet is used to determine the velocity, temperature, and pressure of the flow. The visible signal is sufficiently intense for spatially resolved flow visualization purposes.
ISSN:0003-6951
DOI:10.1063/1.94284
出版商:AIP
年代:1983
数据来源: AIP
|
7. |
Laser‐controlled chemical etching of aluminum |
|
Applied Physics Letters,
Volume 43,
Issue 2,
1983,
Page 146-148
Jeffrey Y. Tsao,
Daniel J. Ehrlich,
Preview
|
PDF (287KB)
|
|
摘要:
A new technique is described for high‐spatial‐resolution (<2‐&mgr;m linewidth) etching of Al thin films. The process is based upon moderate local heating by a tightly focused Ar+laser beam to activate an etching reaction in mixtures of phosphoric acid, nitric acid, and potassium dichromate. By chemically biasing the reaction near its passive/active transition, the laser can enhance the reaction rate by more than six orders of magnitude. The etching mechanism has been studied by etch‐rate measurements, ellipsometry, and Auger spectroscopy, and is ascribed to a competition between the formation of soluble aluminum phosphates and insoluble aluminum oxides.
ISSN:0003-6951
DOI:10.1063/1.94285
出版商:AIP
年代:1983
数据来源: AIP
|
8. |
Optical fiber V‐groove transversal filter |
|
Applied Physics Letters,
Volume 43,
Issue 2,
1983,
Page 149-151
S. A. Newton,
K. P. Jackson,
H. J. Shaw,
Preview
|
PDF (225KB)
|
|
摘要:
A novel single mode optical fiber tapped delay line that uses silicon V‐groove substrates to align an array of directional coupler taps has been demonstrated as a transversal filter. The device was used to generate and correlate 4‐bit, 400‐Mb/s coded sequences. The generated codes exhibited an amplitude uniformity of ±0.04 dB. The electrical correlation output was linear over a range of 25 dB and was limited by electronic components external to the fiber filter itself. Extension of the fabrication technique to include hundreds of taps at intervals as short as several picoseconds may be possible.
ISSN:0003-6951
DOI:10.1063/1.94261
出版商:AIP
年代:1983
数据来源: AIP
|
9. |
Nonlinear photoacoustic measurement of laser pulse correlation functions |
|
Applied Physics Letters,
Volume 43,
Issue 2,
1983,
Page 151-153
A. Schmid,
P. Horn,
P. Bra¨unlich,
Preview
|
PDF (225KB)
|
|
摘要:
A simple method is described for the measurement of temporal characteristics of short picosecond‐nanosecond laser pulses in the visible and near IR. It relies on the photoacoustic detection of two‐photon absorption in thallous halides in an otherwise conventional correlation experiment.
ISSN:0003-6951
DOI:10.1063/1.94262
出版商:AIP
年代:1983
数据来源: AIP
|
10. |
Threshold‐wavelength and threshold‐temperature dependences of GaInAsP/InP lasers with frequency selective feedback operating in the 1.3‐ and 1.5‐&mgr;m regions |
|
Applied Physics Letters,
Volume 43,
Issue 2,
1983,
Page 154-156
W. T. Tsang,
N. A. Olsson,
R. A. Logan,
Preview
|
PDF (270KB)
|
|
摘要:
We have shown for the first time that a detailed and systematic study of the threshold‐wavelength and the threshold‐temperature dependences at different lasing wavelengths of laser diodes with built‐in frequency selective feedback (FSF) mechanisms such as distributed feedback lasers, distributed Bragg reflector lasers, and lateral‐evanescent field distributed feedback lasers, can be conveniently performed by utilizing external cavity semiconductor lasers with frequency selective feedback. The results obtained show that the position of the FSF lasing mode within the spectral gain profile of the laser significantly affected the threshold current and threshold‐temperature dependence.
ISSN:0003-6951
DOI:10.1063/1.94263
出版商:AIP
年代:1983
数据来源: AIP
|