摘要:

We have built a pinhole camera for imaging the deuterium‐tritium (DT) burn region of laser‐driven implosions by spatially resolving the &agr; particles. Kodak Pathe LR‐115 cellulose nitrate film was used as a detector with an 8‐mg/cm2Ta filter. Initial results show that the &agr; particles are produced in a region which is much smaller than the initial glass microsphere.

ISSN:0003-6951    

DOI:10.1063/1.89257

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Hall‐effect and conductivity measurements as well as channeling‐effect measurements were used to study the lattice defects induced by ion implantation in thin films of PbTe. The implantation was performed with 300‐keV Pb, Te, and Xe ions at room temperature. For the as‐implanted samples the Hall‐effect measurements gave a constant value for the carrier concentration, independent of the implantation dose. The backscattering measurements showed a continuous increase in the lattice disorder with increasing dose. A model, based on the assumption of an acceptor level above the conduction‐band minimum, is proposed to explain this behavior.

ISSN:0003-6951    

DOI:10.1063/1.89258

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Depth profiles of As‐implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi−species, produced in high yield by Cs+ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×1015atom cm−3(50 ppb) during a depth profile of a 250‐&mgr;m square area.

ISSN:0003-6951    

DOI:10.1063/1.89259

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

We report measurements of the hydrogen concentrations and densities of amorphous silicon films prepared from glow discharge plasmas of silane. Quantitative results are obtained from the resonant nuclear reaction15N+1H→12C+4He+&ggr; by counting the emitted &ggr; rays. Mass spectrographic analysis of the gases evolved upon heating are also used to estimate the relative hydrogen concentrations for different preparation conditions. Comparisons are given to previously reported infrared absorption results and to electron microprobe estimates.

ISSN:0003-6951    

DOI:10.1063/1.89260

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

A new method of performing a creep test on silicon single crystals is described. The experiment utilizes silicon wafers. The stress applied to the wafers is provided by a Si3N4film deposited by chemical vapor deposition on the front side of the wafer. The samples, i.e., silicon wafers with superposed Si3N4films, are annealed in a quartz tube at 1000–1100 °C. The creep curves obtained are classified into two types according to stress. One type is related to plastic deformation of the wafer; the other is an elastic deformation. These results are available for the use of Si3N4film in semiconductor technology.

ISSN:0003-6951    

DOI:10.1063/1.89261

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

A simple new device configuration for the conversion of optical energy into chemical energy is described. The devices, designated ’’photochemical diodes’’, consist of small sandwichlike semiconductor structures. When immersed in an appropriate electrolyte and exposed to light, such devices cause redox reactions to occur, such as the decomposition of water, and the oxidation of sulfide ions to form sulfur. Certain configurations result in up‐conversion of the incident photon energy and appear to represent an inorganic analog of photosynthesis.

ISSN:0003-6951    

DOI:10.1063/1.89262

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

A novel technique was developed to eliminate the Li2O out‐diffusion waveguide in LiNbO3and LiTaO3incurred during the process of Ti in‐diffusion. The out‐diffusion waveguide can be suppressed by annealing the crystals in LiNbO3powder at 900 °C in a flowing oxygen environment for 1 h or longer.

ISSN:0003-6951    

DOI:10.1063/1.89263

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Introduction of a dye doped region into a passive waveguide area has been established by thermal doping of organic dye in a polymer optical solid‐state circuit. Using periodical corrugations with a period of 2050 A˚ formed on a glass substrate, a N2laser pumped dye laser—waveguide system has been constructed.

ISSN:0003-6951    

DOI:10.1063/1.89239

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

AbinitioPOL‐CI calculations are reported on the six lowest states of the Ar2F molecule for isosceles triangle (C2v) and linear Ar‐Ar‐F geometries. In the triangular configuration, the lowest Ar2+F−ionic state (2 2B2) is bound by 5.0 eV relative to Ar2+(2&Sgr;+u)+F−and by 0.6 eV relative to Ar+F−(2 2&Sgr;+)+Ar. Emissions from this state to the repulsive states (1 2A1and 1 2B2) dissociating to Ar+Ar+F are predicted at 268 and 274 nm with a combined lifetime of 128 nsec.

ISSN:0003-6951    

DOI:10.1063/1.89240

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

The plasmadynamic recombination laser concept is verified experimentally in a high‐power quasisteady MPD arcjet operating at 4 kA and 12 g/sec of argon. Measurements of the spatial variation of electron temperature electron density, and population densities in the arc exhaust flow confirm that inverted populations of the 4pto 4sArII transitions are established by collisional‐radiative recombination of the ArIII ion. Using an optical cavity aligned transversely to the flow, recombination lasing of four such transitions, 5145, 4880, 4764, and 4727 A˚, is observed spectrophotographically and photoelectrically over the entire 1‐msec discharge.

ISSN:0003-6951    

DOI:10.1063/1.89241

出版商:AIP    

年代:1977

数据来源: AIP