摘要:

It has been found that an absorber driven into saturation by a strong light pulse can amplify a weak light pulse simultaneously incident upon the medium. Gains as high as 20 cm−1have been observed. This effect is believed to be related to the ability of a saturable absorber to bring about mode locking in a laser cavity.

ISSN:0003-6951    

DOI:10.1063/1.1651839

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

Diffraction of infrared laser light from magnetostatic modes in yttrium iron garnet has been used to study the mechanism by which electromagnetic energy, fed to a grounded wire antenna at one end of an axially magnetized crystal, is converted to exchange‐spin‐wave energy. The properties exhibited by the diffraction support the theory in detail.

ISSN:0003-6951    

DOI:10.1063/1.1651840

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

High energy phosphorous ions implanted into CdS have given evidence of conductivity type conversion after careful post‐annealing. Thermal probe measurements consistently showedp‐type conductivity on the implanted surface. Diodes fabricated from implanted material show good rectification characteristics, low voltage electroluminescence, and double‐injection phenomena at room temperature.

ISSN:0003-6951    

DOI:10.1063/1.1651841

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

A wavelength‐selective feedback modulation scheme was devised to study the competitive behavior of the lasering transitions in the argon ion laser and to determine the coupling relationships, radiative as well as collisional, between the inverted states of the ion. By means of monitoring cross modulation on lasering lines, spontaneous transitions, and discharge current, the interdependence of the lasering transitions was determined. Whereas lasering transitions which share common energy levels, upper or lower, are expected to compete adversely with each other, it was found that under certain conditions the contrary takes place.

ISSN:0003-6951    

DOI:10.1063/1.1651842

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

High conductivityp‐type CdS was formed by ion implanting Bi inton‐type single crystals. Hall measurements and lifetime studies were performed on the implanted layers.p‐njunctions were formed in high conductivityn‐type material and light emission observed in the forward direction. By making two independent contacts to thep‐type layer and measuring theirI‐Vcharacteristics, it was determined that they were not rectifying.

ISSN:0003-6951    

DOI:10.1063/1.1651843

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

Two‐carrier injection into semi‐insulators can cause a current controlled negative resistance. The observation of current filaments in the high conductance region has been reported for an indirect energy gap semiconductor, silicon, at 77°K. These current filaments have now been observed in gallium arsenide, a direct energy gap semiconductor, at room temperature.

ISSN:0003-6951    

DOI:10.1063/1.1651844

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

A three‐step method is described for obtaining holograms of 3D objects illuminated in white light. A horizontal linear array ofnlenslets is used to simultaneously photograph a 3D scene. The resulting array ofn2D images is transformed into a thin horizontal strip hologram, using coherent light. Multiple (n) identical copies of this strip hologram are contiguously arranged in a vertical column, resulting in ann×narray of elemental holograms for viewing of the virtual image of the 3D scene. Horizontal parallax is preserved; vertical parallax is sacrificed to reduce the bandwidth required for transmission by a factorn.

ISSN:0003-6951    

DOI:10.1063/1.1651845

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

A wire Joule‐heated by a current pulse will be set into harmonic oscillation as a result of its rapid bulk expansion. The experimental setup and results are discussed. Young's modulus is obtained for three sample materials, and other possible applications are considered.

ISSN:0003-6951    

DOI:10.1063/1.1651846

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

Diode lasers with emission wavelengths as long as 28 &mgr; have been fabricated using Pb1−xSnxTe withxup to 0.27. Properties of laser diodes at 77°K and 12°K have been measured for a number of compositions in the range 0.15 ≤x≤ 0.27. The vapor growth and annealing‐diffusion steps were performed in a special quartz ampoule which remained sealed throughout the process. Threshold current densities were dependent on diode surface conditions and could be reduced by at least 50% by etching.

ISSN:0003-6951    

DOI:10.1063/1.1651847

出版商:AIP    

年代:1968

数据来源: AIP

摘要:

Large single crystals of KNb3O8were pulled from the slightly off‐stoichiometric melt. Both the unusually developed cleavability and the electrical properties such as dielectric constant, loss tangent, and dielectric breakdown strength are similar to those of mica. This material shows promise both as a substitute for mica and as an interesting new dielectric in its own right.

ISSN:0003-6951    

DOI:10.1063/1.1651848

出版商:AIP    

年代:1968

数据来源: AIP