1. |
Observation of nonlinear optical rectification at 10.6 &mgr;m in compositionally asymmetrical AlGaAs multiquantum wells |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1597-1599
E. Rosencher,
P. Bois,
J. Nagle,
E. Costard,
S. Delaitre,
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摘要:
We report the first experimental evidence of a nonlinear optical effect due to intersubband transitions in compositionally asymmetrical multiquantum wells. The effect is detected as an optical rectification signal appearing at the structure terminals when irradiated by a continuous 10.6 &mgr;m CO2laser. The net electro‐optical coefficient of the structure is found to be 7.2 nm/V which is more than three orders of magnitude higher than for bulk GaAs. The results are in good agreement with theoretical predictions.
ISSN:0003-6951
DOI:10.1063/1.102248
出版商:AIP
年代:1989
数据来源: AIP
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2. |
Substructure in short optical pulses from gain‐switched semiconductor lasers |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1600-1602
A. G. Weber,
E. H. Bo¨ttcher,
D. Bimberg,
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摘要:
The spike‐like substructure in picosecond optical pulses from gain‐switched multimode injection lasers is analyzed. A theoretical description based on the interference of the randomly phased longitudinal laser modes and the transient shift of the envelope of the mode spectrum under gain‐switched operation is presented. Single shot, streak camera records and autocorrelation traces are simulated, describing all essential experimental features of the substructure like its random variation from pulse to pulse and inherent periodicity.
ISSN:0003-6951
DOI:10.1063/1.102249
出版商:AIP
年代:1989
数据来源: AIP
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3. |
High‐speed analog spatial light modulator using a hydrogenated amorphous silicon photosensor and an electroclinic liquid crystal |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1603-1605
I. Abdulhalim,
G. Moddel,
K. M. Johnson,
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摘要:
A high‐speed optically addressed spatial light modulator is described which uses the electroclinic effect in chiral smecticAliquid crystals with ap‐i‐nphotodiode of hydrogenated amorphous silicon (a‐Si:H). The near microsecond response time is a function of the liquid‐crystal mixture and temperature. We present and analyze optical modulation measurements of a device which exhibits a response time of 40 &mgr;s at 29 °C and 4 &mgr;s at 50 °C. The optical response is continuous and linear with electric field and write‐light intensity, allowing for grey level applications.
ISSN:0003-6951
DOI:10.1063/1.102250
出版商:AIP
年代:1989
数据来源: AIP
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4. |
Facet reflection independent, single longitudinal mode oscillation in a GaAlAs/GaAs distributed feedback laser equipped with a gain‐coupling mechanism |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1606-1608
Yoshiaki Nakano,
Yi Luo,
Kunio Tada,
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摘要:
By loading periodic loss perturbation into a GaAlAs/GaAs distributed feedback laser, we have realized complete single longitudinal mode oscillation which is hardly disturbed by cleaved facet reflection. Our coupled‐mode analysis explains this empirical result well.
ISSN:0003-6951
DOI:10.1063/1.102254
出版商:AIP
年代:1989
数据来源: AIP
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5. |
Large optical nonlinearities in semiconductor superlattices |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1609-1611
I. Morrison,
M. Jaros,
A. W. Beavis,
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摘要:
We show that the nonlinear response of a direct‐gap semiconductor superlattice is greatly enhanced when the separation of the lowest two conduction minibands approaches the magnitude of the principal gap. Two structures exhibiting this enhanced nonlinear response are described.
ISSN:0003-6951
DOI:10.1063/1.102234
出版商:AIP
年代:1989
数据来源: AIP
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6. |
Broadband optical detection of ultrasound by optical sideband stripping with a confocal Fabry–Perot |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1612-1614
J.‐P. Monchalin,
R. He´on,
P. Bouchard,
C. Padioleau,
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摘要:
A method which allows broadband optical detection of ultrasound with large e´tendue from a scattering surface is presented. The wave scattered by the surface interferes with a reference wave which is derived from the scattered wave after stripping it from its optical sidebands by a confocal resonator. Simple implementation by a confocal Fabry–Perot used in reflection is explained and demonstrated experimentally.
ISSN:0003-6951
DOI:10.1063/1.102235
出版商:AIP
年代:1989
数据来源: AIP
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7. |
Superhigh‐rate plasma jet etching of silicon |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1615-1617
L. Ba´rdos,
S. Berg,
H‐O. Blom,
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摘要:
A new, very high rate dry etching system based on the plasma jet principle is presented. In this device the active gases are fed into the processing vacuum chamber through a small 0.5 mm i.d. nozzle. By applying radio frequency power (13.56 MHz) a hollow cathode discharge is created inside the nozzle. This discharge will be very intense and effective in dissociating the gas mixture used for reactive etching. A jet stream of radicals will be formed. By placing a silicon substrate in front of this jet stream it is possible to perform very high rate reactive etching of silicon. Etch rates as high as 0.1–0.2 mm/min can be easily obtained. It is demonstrated that the etch rate and the width of the etching crater are sensitive to different processing conditions. The width of the etching crater may be smaller than the diameter of the nozzle exit under certain conditions.
ISSN:0003-6951
DOI:10.1063/1.102215
出版商:AIP
年代:1989
数据来源: AIP
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8. |
Plasma‐enhanced photoemission as a discharge lamp diagnostic |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1618-1620
M. B. Schulman,
D. R. Woodward,
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摘要:
We describe our application of plasma‐enhanced photoemission as aninsituelectrode diagnostic for operating discharge lamps. The method uses focused low‐power laser beams of various wavelengths to investigate emission properties of cathodes in fluorescent lamps. When a pulsed laser beam is directed onto the cathode, the photoemission effect will cause electrons to be ejected ifh&ngr; is greater than the effective work function of the surface over the area illuminated. This burst of photoelectrons can be monitored, as well as the optogalvanic signal which results as they enter the surrounding discharge and produce additional ionization. The photon energy at which photoemission is observed places an upper limit on the local effective work function, which is influenced by the electric field at the cathode surface.
ISSN:0003-6951
DOI:10.1063/1.102216
出版商:AIP
年代:1989
数据来源: AIP
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9. |
Characterization of reorientation of a thin layer of ferroelectric liquid‐crystal material under an applied field by excitation of optical modes |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1621-1623
S. J. Elston,
J. R. Sambles,
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摘要:
The director configuration in a thin layer of ferroelectric liquid crystal (FLC) under an applied static field is investigated by exciting optic modes in a FLC cell. The reflectivity data obtained may only be fitted to theory by maintaining in the voltage‐distorted optical tensor profile a point in the middle of the cell having the same structure as at 0 V. This unambiguously confirms the chevron structure observed in x‐ray diffraction and shows that the layering remains largely undistorted to fields of order 3×106V m−1.
ISSN:0003-6951
DOI:10.1063/1.102217
出版商:AIP
年代:1989
数据来源: AIP
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10. |
Investigation of hydrogenated amorphous carbon coatings for magnetic data storage media by atomic force microscopy |
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Applied Physics Letters,
Volume 55,
Issue 16,
1989,
Page 1624-1626
E. Meyer,
H. Heinzelmann,
P. Gru¨tter,
Th. Jung,
L. Scandella,
H.‐R. Hidber,
H. Rudin,
H.‐J. Gu¨ntherodt,
C. Schmidt,
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摘要:
Thin films of hydrogenated amorphous carbon for magnetic data storage media have been examined by atomic force microscopy. The topography of several coatings has been imaged with a lateral resolution of a few nanometers. Histograms of the height distribution and rms values have been calculated to characterize the roughness of the surfaces quantitatively. Variations of these microscopic properties could be related to changes in the macroscopic behavior like friction and wear.
ISSN:0003-6951
DOI:10.1063/1.102218
出版商:AIP
年代:1989
数据来源: AIP
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